Abstract: A semiconductor module comprises a mounting board. A plurality of power switching device chips are mounted on the mounting board by flip-chip bonding. The chip has an upper surface and a lower surface and is configured to face the upper surface toward the mounting board. A drive IC chip is mounted on the mounting board by flip-chip bonding. The drive IC chip is operative to drive gates of transistors formed in the plurality of power switching device chips. A plurality of heat sink members are located on the lower surfaces of the plurality of power switching device chips, respectively. A resinous member is provided to seal the plurality of power switching device chips and the drive IC chip in a single package.

Abstract: In order to make a thermoelectric device usable in a high temperature environment of 300° C. or above, the necessity for solder is eliminated by bonding each electrode of a second substrate to one end of each thermoelectric element by using gold. Further, a conductive member, capable of accommodating expansion and contraction of the thermoelectric elements, is provided between each electrode of a first substrate, on which bonding by gold is not performed, and the other end of each thermoelectric element. Additionally, a lid is placed outside to the second substrate, and the lid and the first substrate are coupled so that pressure can be applied between the first and second substrates. Thus, the second substrate, the electrodes and the thermoelectric elements are held. This prevents the thermoelectric elements from being damaged due to thermal deformation as in the case where electrodes are bonded to thermoelectric elements by solder.

Abstract: In order that a thermoelectric device is caused to stably operate even under high temperature environment, the thermoelectric device includes: first and second substrates, each being provided with a plurality of electrodes; a plurality of thermoelectric elements arranged between the first and second substrates in such a manner that one ends of the thermoelectric elements are associated with the respective electrodes on the first substrate, and the other ends thereof are associated with the respective electrodes on the second substrate; a defining member defining positions of the respective thermoelectric elements; and a lid disposed outside of the second substrate, and connected to the first substrate in such a manner that pressure is applied between the second substrate and the first substrate.

Abstract: In a thermoelectric device, metal fiber nets as conductive members having elasticity are placed between first electrodes and thermoelectric elements, in order to increase productivity and make it possible to reduce variations in performance without impairing the reliability of a slidable structure even if each component is heated to be thermally deformed. This placement prevents the temperature of the metal fiber nets from becoming high in the operation of the thermoelectric device and prevents the elasticity of the metal fiber nets from being lost. Further, this constitution eliminates the necessity for bonding the first electrodes to the thermoelectric elements using solder. Moreover, the elasticity of the metal fiber nets makes it possible to accommodate variations in height among the respective thermoelectric elements when the thermoelectric device is assembled.

Abstract: A gene silencing vector according to the present invention comprises a vector which includes a promoter, an enhancer sequence in the downstream of the promoter, and a gene encoding a potyvirus-origin coat protein in the downstream of the enhancer sequence, wherein in order to cause gene silencing of the specific target gene in a host plant, the vector is used with a specific target gene or a gene that is homologous to the target gene inserted in the vicinity of the gene encoding the coat protein.

Abstract: An optically coupled semiconductor device according to the present invention comprises a mount electrode and a wire electrode which are formed on a top main face of the first wiring substrate, a light-emitting element is electrically connected to the mount electrode and the wire electrode, a first electrode pad and a second electrode pad which are provided on the top main face of the second wiring substrate in such a manner as to sandwich the opening formed in the second wiring substrate, a photo-receptor element which is arranged in such a manner as to block the opening formed in the second wiring substrate and which is connected to the first electrode pad so as to face the light-emitting element, and a switching element which is connected to the second electrode pad so as to face the wire.

Abstract: In order to provide a highly reliable thermoelectric device, in a thermoelectric device, a plurality of heat-radiating-side electrodes, arranged in accordance with positions where respective thermoelectric elements are to be arranged, are arrayed in an array fashion on a planer surface of a heat-radiating-side board. Heat-radiating-side end surfaces of the plurality of p-type thermoelectric elements and n-type thermoelectric elements and the heat-radiating-side electrodes are joined together by solders. Heat-absorbing-side electrodes are brought into sliding contact with heat-absorbing-side end surfaces of these thermoelectric elements.

Abstract: An optically coupled semiconductor device according to the present invention comprises a mount electrode and a wire electrode which are formed on a top main face of the first wiring substrate, a light-emitting element is electrically connected to the mount electrode and the wire electrode, a first electrode pad and a second electrode pad which are provided on the top main face of the second wiring substrate in such a manner as to sandwich the opening formed in the second wiring substrate, a photo-receptor element which is arranged in such a manner as to block the opening formed in the second wiring substrate and which is connected to the first electrode pad so as to face the light-emitting element, and a switching element which is connected to the second electrode pad so as to face the wire.

Abstract: In a stacked-type semiconductor unit having a plurality of semiconductor devices stacked on a base board including a base electrode, each semiconductor device has a wiring board including an external electrode provided in an end portion thereof. The semiconductor devices are stacked on the base board such that the external electrodes are aligned with one another. Then, the external electrodes are electrically connected to the base board by solder.

Abstract: A semiconductor device comprises a first wiring board and a second wiring board, wherein the first wiring board includes a first semiconductor element arranged on the underside of the first wiring board, and a second connecting section formed on the underside of the first wiring board, the second wiring board includes a second semiconductor element, and a third connecting section formed on the surface of the second wiring board, the second connecting section has a first external connecting land, the third connecting section is arranged opposite to the first external connecting land and has a second external connecting land which is smaller than the first external connecting land, and the second and third connecting sections are formed such that a combined thickness thereof provides a given space between the first semiconductor element and the second wiring board.

Abstract: In a stacked-type semiconductor unit having a plurality of semiconductor devices stacked on a base board including a base electrode, each semiconductor device has a wiring board including an external electrode provided in an end portion thereof. The semiconductor devices are stacked on the base board such that the external electrodes are aligned with one another. Then, the external electrodes are electrically connected to the base board by solder.

Abstract: A semiconductor device comprises a first wiring board and a second wiring board, wherein the first wiring board includes a first semiconductor element arranged on the underside of the first wiring board, and a second connecting section formed on the underside of the first wiring board, the second wiring board includes a second semiconductor element, and a third connecting section formed on the surface of the second wiring board, the second connecting section has a first external connecting land, the third connecting section is arranged opposite to the first external connecting land and has a second external connecting land which is smaller than the first external connecting land, and the second and third connecting sections are formed such that a combined thickness thereof provides a given space between the first semiconductor element and the second wiring board.

Abstract: A semiconductor device includes a pair of semiconductor switching elements and a board. Each semiconductor switching element has positive and control electrodes formed on one surface and a negative electrode formed on the other surface. The positive and control electrodes of one of the semiconductor switching elements are joined to the board, and the negative electrode of the other semiconductor switching element, which faces in a direction opposite to that of one of the semiconductor switching elements, is joined to the board.

Abstract: A circuit substrate which is formed by fixing a wiring pattern on an insulated substrate has a shielding member for absorbing or reflecting radio waves formed on a first electronic component electrically connected. A shielding layer for absorbing or reflecting radio waves is formed on the circuit substrate. And, a second electronic component is disposed between the first electronic component and the shielding layer.

Abstract: The invention provides a method for transforming a plant through a bacterium belonging to genus Agrobacterium, comprising transforming plant cells simultaneously with a first T-DNA (1) and a second T-DNA (2); and selecting the cells which acquired drug resistance; the first T-DNA (1) containing a gene giving the drug resistance, which functions in the plant; the second T-DNA (2) containing a desired DNA fragment to be introduced into the plant, the second T-DNA (2) being contained in a hybrid vector; the hybrid vector being prepared by homologous recombination between an acceptor vector and an intermediate vector in the bacterium belonging to genus Agrobacterium; the acceptor vector containing at least (a) a DNA region having a function to replicate a plasmid in the bacterium belonging to genus Agrobacterium and Escherichia coli, (b) a DNA region containing virB gene and virG gene in virulence region of Ti plasmid pTiBo542 of Agrobacterium tumefaciens, and (c) a DNA region which is homologous with a part of t