Abstract: A dresser is enabled to adjust a swing speed in scanning areas set on a polishing member along a swing direction. A surface height of the polishing member in monitoring areas set in advance on the polishing member along the swing direction of the dresser is measured. A dress model matrix defined from the monitoring areas, the scanning areas and a dress model is created. Height profile predicted value is calculated using the dress model and the swing speed in each scanning area or a staying time. Evaluation index is set based on a difference from a target value of a height profile of the polishing member and a step of setting the swing speed in each scanning area of the dresser based on the evaluation index. At least one of parameters to determine the target value or the evaluation index of the height profile is made to change automatically.

Abstract: A dresser is enabled to adjust a swing speed in scanning areas set on a polishing member along a swing direction. A surface height of the polishing member in monitoring areas set in advance on the polishing member along the swing direction of the dresser is measured. A dress model matrix defined from the monitoring areas, the scanning areas and a dress model is created. Height profile predicted value is calculated using the dress model and the swing speed in each scanning area or a staying time. Evaluation index is set based on a difference from a target value of a height profile of the polishing member and a step of setting the swing speed in each scanning area of the dresser based on the evaluation index. At least one of parameters to determine the target value or the evaluation index of the height profile is made to change automatically.

Abstract: A dresser is enabled to adjust a swing speed in scanning areas set on a polishing member along a swing direction. A surface height of the polishing member in monitoring areas set in advance on the polishing member along the swing direction of the dresser is measured. A dress model matrix defined from the monitoring areas, the scanning areas and a dress model is created. Height profile predicted value is calculated using the dress model and the swing speed in each scanning area or a staying time. Evaluation index is set based on a difference from a target value of a height profile of the polishing member and a step of setting the swing speed in each scanning area of the dresser based on the evaluation index. At least one of parameters to determine the target value or the evaluation index of the height profile is made to change automatically.

Abstract: A polishing method capable of accurately determining a thickness of a polishing-target layer without being affected by noises is disclosed. The polishing method for polishing a polishing-target layer of a workpiece includes: rotating a polishing table supporting a polishing pad; polishing the polishing-target layer by pressing the workpiece against the polishing pad; irradiating the workpiece with light; receiving reflected light from the workpiece; measuring an intensity of the reflected light at each of wavelengths; generating a spectral waveform showing a relationship between the intensity and wavelength of the reflected light; performing a Fourier transform process on the spectral waveform to generate a frequency spectrum; moving a peak search range for the frequency spectrum according to a polishing time; determining a peak of the frequency spectrum within the peak search range; and determining a thickness of the polishing-target layer corresponding to the determined peak.

Abstract: A substrate processing apparatus that polishes a substrate by sliding the substrate on a polishing member, the substrate processing apparatus including a dresser that dresses the polishing member by swinging on the polishing member, the dresser being enabled to adjust a swing speed in a plurality of scanning areas set on the polishing member along a radial direction, a height detection section that measures a surface height of the polishing member along the radial direction of the polishing member and thereby generates a pad profile, a dresser load setting section that sets a dresser load to be applied by the dresser to the polishing member, a pad height correction section that calculates an amount of correction of the surface height of the polishing member according to an amount of variation from a reference load of the dresser load over the radial direction, corrects the measured value of the surface height with the amount of correction and thereby corrects the pad profile, and a moving speed calculation se

Abstract: A polishing apparatus comprises a dresser that can adjust swing speed in the scanning areas set on a polishing member along a swing direction, a height detection section that measures a surface height of the polishing member in a plurality of monitoring areas set on the polishing member along the swing direction of the dresser, a dress model matrix creation section that creates a dress model matrix defined from a plurality of monitoring areas, scanning areas and a dress model, an evaluation index creation section that calculates a height profile predicted value using the dress model, the swing speed in each scanning area or a staying time and sets evaluation index based on a difference from a target value of height profile of the polishing member and a moving speed calculation section that calculates the swing speed in each scanning area of the dresser based on the evaluation index.

Abstract: A dresser is enabled to adjust a swing speed in scanning areas set on a polishing member along a swing direction. A surface height of the polishing member in monitoring areas set in advance on the polishing member along the swing direction of the dresser is measured. A dress model matrix defined from the monitoring areas, the scanning areas and a dress model is created. Height profile predicted value is calculated using the dress model and the swing speed in each scanning area or a staying time. Evaluation index is set based on a difference from a target value of a height profile of the polishing member and a step of setting the swing speed in each scanning area of the dresser based on the evaluation index. At least one of parameters to determine the target value or the evaluation index of the height profile is made to change automatically.

Abstract: A polishing apparatus comprises a dresser that can adjust swing speed in the scanning areas set on a polishing member along a swing direction, a height detection section that measures a surface height of the polishing member in a plurality of monitoring areas set on the polishing member along the swing direction of the dresser, a dress model matrix creation section that creates a dress model matrix defined from a plurality of monitoring areas, scanning areas and a dress model, an evaluation index creation section that calculates a height profile predicted value using the dress model, the swing speed in each scanning area or a staying time and sets evaluation index based on a difference from a target value of height profile of the polishing member and a moving speed calculation section that calculates the swing speed in each scanning area of the dresser based on the evaluation index.

Abstract: The present invention provides an apparatus and a method for polishing a substrate having a film formed thereon. The method includes: rotating a polishing table supporting a polishing pad by a table motor; pressing the substrate against the polishing pad by a top ring; obtaining a signal containing a thickness information of the film; producing from the signal a polishing index value that varies in accordance with a thickness of the film; monitoring a torque current value of the table motor and the polishing index value; and determining a polishing end point based on a point of time when the torque current value has reached a predetermined threshold value or a point of time when a predetermined distinctive point of the polishing index value has appeared, whichever comes first.

Abstract: The polishing process includes a first state where an eddy current sensor and a polishing target object do not face each other and a second state where the eddy current sensor and the polishing target object face each other. The method of correcting a film thickness measurement value includes obtaining a first measurement signal (Xout, Yout) output from the eddy current sensor in the first state (step S108), computing a correction value (?X, ?Y) on the basis of the obtained first measurement signal and a reference signal (Xsd, Ysd) set in advance, obtaining a second measurement signal (X, Y) output from the eddy current sensor in the second state (step S104), and correcting the obtained second measurement signal on the basis of the computed correction value while the polishing process is being performed (step S105).

Abstract: The polishing process includes a first state where an eddy current sensor and a polishing target object do not face each other and a second state where the eddy current sensor and the polishing target object face each other. The method of correcting a film thickness measurement value includes obtaining a first measurement signal (Xout, Yout) output from the eddy current sensor in the first state (step S108), computing a correction value (?X, ?Y) on the basis of the obtained first measurement signal and a reference signal (Xsd, Ysd) set in advance, obtaining a second measurement signal (X, Y) output from the eddy current sensor in the second state (step S104), and correcting the obtained second measurement signal on the basis of the computed correction value while the polishing process is being performed (step S105).

Abstract: A method of polishing a substrate includes rotating a polishing table having a polishing surface, holding the substrate by a top ring, bringing the substrate into contact with the polishing surface while swinging and rotating the top ring to polish the substrate, and monitoring a surface condition of the substrate by a monitoring sensor. A rotational speed of the polishing table and conditions of swing motion of the top ring are determined such that a position of the monitoring sensor, a position of a center of rotation of the top ring, and a direction of the swing motion of the top ring at a point of time when a predetermined period of time has elapsed after polishing of the substrate is started approximately coincide with their previous values at a point of time before the predetermined period of time has elapsed.

Abstract: The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a semiconductor wafer, to planarize the substrate.

Abstract: A polishing apparatus has a polishing table having a polishing surface and a top ring for pressing a substrate against the polishing surface while independently controlling pressing forces applied to a plurality of areas on the substrate. The polishing apparatus has a sensor for monitoring substrate conditions of a plurality of measurement points on the substrate, a monitor unit for performing a predetermined arithmetic process on a signal from the sensor to generate a monitor signal, and a controller for comparing the monitor signal of the measurement points with the reference signal and controlling the pressing forces of the top ring so that the monitor signal of the measurement point converges on the reference signal.

Abstract: A method monitors a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.

Abstract: A polishing apparatus has a polishing table having a polishing surface and a top ring for pressing a substrate against the polishing surface while independently controlling pressing forces applied to a plurality of areas on the substrate. The polishing apparatus has a sensor for monitoring substrate conditions of a plurality of measurement points on the substrate, a monitor unit for performing a predetermined arithmetic process on a signal from the sensor to generate a monitor signal, and a controller for comparing the monitor signal of the measurement points with the reference signal and controlling the pressing forces of the top ring so that the monitor signal of the measurement point converges on the reference signal.

Abstract: A method of polishing a substrate is described. The method includes rotating a polishing table having a polishing surface, holding a substrate by a top ring, bringing the substrate into contact with the polishing surface while swinging and rotating the top ring to polish the substrate, and monitoring a surface condition of the substrate by a monitoring sensor. A rotational speed of the polishing table and conditions of swing motion of the top ring are determined such that a position of the monitoring sensor, a position of a center of rotation of the top ring, and a direction of the swing motion of the top ring at a point of time when a predetermined period of time has elapsed after polishing of the substrate is started approximately coincide with their previous values at a point of time before the predetermined period of time has elapsed.

Abstract: A polishing apparatus has a polishing table (18) having a polishing surface (40) and a top ring (20) for pressing a substrate against the polishing surface (40) while independently controlling pressing forces applied to a plurality of areas (C1-C4) on the substrate. The polishing apparatus has a sensor (52) for monitoring substrate conditions of a plurality of measurement points on the substrate, a monitor unit (53) for performing a predetermined arithmetic process on a signal from the sensor (52) to generate a monitor signal, and a controller (54) for comparing the monitor signal of the measurement points with the reference signal and controlling the pressing forces of the top ring (20) so that the monitor signal of the measurement point converges on the reference signal.

Abstract: The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a semiconductor wafer, to planarize the substrate.

Abstract: The present invention provides a method of monitoring a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.