Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. The light extraction layer includes: a plurality of cone-shaped parts formed in an array on the light extraction surface, and a plurality of granular parts formed both on a side part of the cone-shaped part and in a space between adjacent cone-shaped parts. A method of manufacturing the semiconductor light emitting device includes: forming a mask having an array pattern on the light extraction layer; and etching the mask and the light extraction layer from above the mask. The etching includes first dry-etching performed until an entirety of the mask is removed and second dry-etching performed to further dry-etch the light extraction layer after the mask is removed.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface of the semiconductor light emitting device. A proportion of an area occupied by the multiple cone-shaped parts per a unit area of the light extraction surface is not less than 65% and not more than 95% in a plan view of the light extraction surface, and an aspect ratio h/p defined as a proportion of a height h of the cone-shaped part relative to a distance p between apexes of adjacent cone-shaped parts is not less than 0.3 and not more than 1.0.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface. The cone-shaped part has a first portion having a first angle of inclination of a side surface and a second portion having a second angle of inclination of a side surface smaller than the first angle. The second portion is closer to an apex of the cone-shaped part than the first portion and has a larger height than the first portion.

Abstract: A polarizer that suppresses a decrease in extinction ratio due to leakage light in a Cross Nicol condition, a display that utilizes the same, and an ultraviolet emitting apparatus are provided. A polarizer includes a substrate transparent to light within a utilized bandwidth, a wire grid portion including a plurality of wires which extends in a direction and which is arranged side by side at a pitch shorter than a wavelength of the light, and a polarizing axis correcting portion which is formed of a dielectric provided at a side at which the light enters the wire grid portion, and which performs correction so as to reduce a displacement in an angle between an incidence-side transmittance axis of linear polarized light and an emitting-side absorption axis thereof when the linear polarized light within the utilized bandwidth enters at an azimuth angle of 45 degrees relative to the wires.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface of the semiconductor light emitting device. A proportion of an area occupied by the multiple cone-shaped parts per a unit area of the light extraction surface is not less than 65% and not more than 95% in a plan view of the light extraction surface, and an aspect ratio h/p defined as a proportion of a height h of the cone-shaped part relative to a distance p between apexes of adjacent cone-shaped parts is not less than 0.3 and not more than 1.0.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface. The cone-shaped part has a first portion having a first angle of inclination of a side surface and a second portion having a second angle of inclination of a side surface smaller than the first angle. The second portion is closer to an apex of the cone-shaped part than the first portion and has a larger height than the first portion.

Abstract: A semiconductor light emitting device includes a light extraction layer having a light extraction surface. The light extraction layer includes: a plurality of cone-shaped parts formed in an array on the light extraction surface, and a plurality of granular parts formed both on a side part of the cone-shaped part and in a space between adjacent cone-shaped parts. A method of manufacturing the semiconductor light emitting device includes: forming a mask having an array pattern on the light extraction layer; and etching the mask and the light extraction layer from above the mask. The etching includes first dry-etching performed until an entirety of the mask is removed and second dry-etching performed to further dry-etch the light extraction layer after the mask is removed.

Abstract: A light emitting device that includes a concavo-convex structure mainly utilizing the diffraction effect rather than the scattering effect of light, thereby improving the light extraction efficiency. A light emitting device includes a laminated part where a semiconductor layer including a light emitting layer is laminated, and a diffraction surface comprising a concavo-convex structure which is formed at a boundary of any layer in the laminated part, and which reflects incident light emitted by the light emitting layer in accordance with a Bragg's diffraction condition. The concavo-convex structure is formed in such a way that an inclination of a side wall of a convexity relative to the diffraction surface is greater than 75 degrees.

Abstract: A light-controlled light modulator can achieve high-speed, low-loss wavelength conversion. Continuous light with a wavelength ?j is launched into an MMI coupler via a port, and is split into two parts by the MMI coupler, which are led to a loop-type interferometer. In the loop-type interferometer, the two parts travel separately around the loop as clockwise traveling light and counterclockwise traveling light, are combined by the MMI coupler again via a filter-equipped phase modulator, thereby being emitted to the port. In this state, signal light ?i(s) with a wavelength ?i is launched into the filter-equipped phase modulator via a port. Even when the wavelength ?i of the signal light ?i(s) is equal to the wavelength ?j of the wavelength converted output light, the wavelength conversion can be achieved with preventing noise from being mixed into the output light emitted from a port.

Abstract: A light-controlled light modulator can achieve high-speed, low-loss wavelength conversion. Continuous light with a wavelength &lgr;j is launched into an MMI coupler via a port, and is split into two parts by the MMI coupler, which are led to a loop-type interferometer. In the loop-type interferometer, the two parts travel separately around the loop as clockwise traveling light and counterclockwise traveling light, are combined by the MMI coupler again via a filter-equipped phase modulator, thereby being emitted to the port. In this state, signal light &lgr;i(s) with a wavelength &lgr;i is launched into the filter-equipped phase modulator via a port. Even when the wavelength &lgr;i of the signal light &lgr;i(s) is equal to the wavelength &lgr;j of the wavelength converted output light, the wavelength conversion can be achieved with preventing noise from being mixed into the output light emitted from a port.

Abstract: A light-controlled light modulator can achieve high-speed, low-loss wavelength conversion. Continuous light with a wavelength &lgr;j is launched into an MMI coupler via a port, and is split into two parts by the MMI coupler, which are led to a loop-type interferometer. In the loop-type interferometer, the two parts travel separately around the loop as clockwise traveling light and counterclockwise traveling light, are combined by the MMI coupler again via a filter-equipped phase modulator, thereby being emitted to the port. In this state, signal light &lgr;i(s) with a wavelength &lgr;i is launched into the filter-equipped phase modulator via a port. Even when the wavelength &lgr;i of the signal light &lgr;i(s) is equal to the wavelength &lgr;j of the wavelength converted output light, the wavelength conversion can be achieved with preventing noise from being mixed into the output light emitted from a port.

Abstract: A light-controlled light modulator can achieve high-speed, low-loss wavelength conversion. Continuous light with a wavelength &lgr;j is launched into an MMI coupler via a port, and is split into two parts by the MMI coupler, which are led to a loop-type interferometer. In the loop-type interferometer, the two parts travel separately around the loop as clockwise traveling light and counterclockwise traveling light, are combined by the MMI coupler again via a filter-equipped phase modulator, thereby being emitted to the port. In this state, signal light &lgr;i(s) with a wavelength &lgr;i is launched into the filter-equipped phase modulator via a port. Even when the wavelength &lgr;i of the signal light &lgr;i(s) is equal to the wavelength &lgr;j of the wavelength converted output light, the wavelength conversion can be achieved with preventing noise from being mixed into the output light emitted from a port.