Abstract: A dielectric film, contains: (1) Bi and Ti; (2) at least one element E1 selected from the group consisting of Na and K; and (3) at least one element E2 selected from the group consisting of Ba, Sr, and Ca. The dielectric film has a main phase containing an oxide that contains Bi, Ti, the element E1, and the element E2 and has a perovskite structure, and a subphase that contains Bi and has an oxygen concentration lower than that of the main phase. In a sectional surface of the dielectric film, a ratio RS of an area of the subphase to a sum of an area of the main phase and the area of the subphase is greater than or equal to 0.03 and less than or equal to 0.3.

Abstract: Active material is obtained by sintering a precursor, has a layered structure and is represented by the following formula (1). The temperature at which the precursor becomes a layered structure compound in its sintering in atmospheric air is 450° C. or less. Alternatively, the endothermic peak temperature of the precursor when its temperature is increased from 300° C. to 800° C. in its differential thermal analysis in the atmospheric air is 550° C. or less. LiyNiaCobMncMdOxFz??(1) In formula (1), the element M is at least one of Al, Si, Zr, Ti, Fe, Mg, Nb, Ba, and V and 1.9?(a+b+c+d+y)?2.1, 1.0?y?1.3, 0<a?0.3, 0?b?0.25, 0.3?c?0.7, 0?d?0.1, 1.9?(x+z)?2.0, and 0?z?0.15 are satisfied.

Abstract: A surface acoustic wave element includes a thin film electrode composed of monocrystal aluminum disposed on a piezoelectric substrate. At least one metal of Cu, Ta, W, and Ti is segregated in the thin film electrode composed of monocrystal aluminum. In this surface acoustic wave element, segregation of Cu or the like occurs in the thin film electrode. Such segregation is effective to reduce the occurrence of cracks on the piezoelectric substrate during ultrasonic wave connection for flip chip mounting. That is, because the occurrence of cracks on the piezoelectric substrate is reduced, tolerance against the ultrasonic vibration is advantageously improved in the surface acoustic wave element.

Abstract: A surface acoustic wave element includes a thin film electrode composed of monocrystal aluminum disposed on a piezoelectric substrate. At least one metal of Cu, Ta, W, and Ti is segregated in the thin film electrode composed of monocrystal aluminum. In this surface acoustic wave element, segregation of Cu or the like occurs in the thin film electrode. Such segregation is effective to reduce the occurrence of cracks on the piezoelectric substrate during ultrasonic wave connection for flip chip mounting. That is, because the occurrence of cracks on the piezoelectric substrate is reduced, tolerance against the ultrasonic vibration is advantageously improved in the surface acoustic wave element.

Abstract: An organic EL device includes a substrate (21), a hole infecting electrode (22), an electron injecting electrode (25), and organic layers (23, 24) disposed between the electrodes. The hole injecting electrode (22) is an ITO electrode having (111) orientation. Due to improved film formation, close contact and physical properties at the interface between the hole injecting electrode and the organic layer, the device has a long lifetime, high luminance, high efficacy, and quality display and prevents the occurrence of current leakage and dark spots.