Abstract: Provided is a device of bonding substrates together, which includes a first holding unit configured to vacuum-draw a first substrate and to adsorptively hold the first substrate on a lower surface thereof and a second holding unit installed below the first holding unit and configured to vacuum-draw a second substrate and to adsorptively hold the second substrate on an upper surface thereof. The second holding unit includes: a body portion configured to vacuum-draw the entire surface of the second substrate; a plurality of pins installed on the body portion and configured to make contact with a rear surface of the second substrate; and a support portion installed on the body portion at the outer side of the pins, the support portion having a reduced contact area over which the support portion makes contact with an outer peripheral portion of the second substrate.

Abstract: Provided is a device of bonding substrates together, which includes a first holding unit configured to vacuum-draw a first substrate and to adsorptively hold the first substrate on a lower surface thereof and a second holding unit installed below the first holding unit and configured to vacuum-draw a second substrate and to adsorptively hold the second substrate on an upper surface thereof. The second holding unit includes: a body portion configured to vacuum-draw the entire surface of the second substrate; a plurality of pins installed on the body portion and configured to make contact with a rear surface of the second substrate; and a support portion installed on the body portion at the outer side of the pins, the support portion having a reduced contact area over which the support portion makes contact with an outer peripheral portion of the second substrate.

Abstract: Methods for forming an ultra thin structure. The method includes a polymer deposition and etching process. In one embodiment, the methods may be utilized to form fabricate submicron structure having a critical dimension less than 30 nm and beyond. The method further includes a multiple etching processes. The processes may be varied to meet different process requirements. In one embodiment, the process gently etches the substrate while shrinking critical dimension of the structures formed within the substrate. The dimension of the structures may be shank by coating a photoresist like polymer to sidewalls of the formed structure, but substantially no polymer accumulation on the bottom surface of the formed structure on the substrate. The embodiments described herein also provide high selectivity in between each layers formed on the substrate during the fabricating process and preserving a good control of profile formed within the structure.