Patents by Inventor Yasunobu Koshi
Yasunobu Koshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105465Abstract: There is provided a technique that includes: (a) supplying a first gas containing a Group 14 element to a substrate including a recess; (b) supplying a second gas containing a Group 15 or Group 13 element to the substrate; (c) forming a first film containing the Group 14 element in the recess by performing (a) and (b) with the second gas at a first concentration, and stopping film formation before the recess is filled up with the first film; and (d) after (c), performing (b) with the second gas at a second concentration and heat-treating the substrate.Type: ApplicationFiled: September 22, 2023Publication date: March 28, 2024Applicant: Kokusai Electric CorporationInventors: Takahiro MIYAKURA, Akito Hirano, Yasunobu Koshi, Yasuhiro Megawa
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Publication number: 20240003005Abstract: There is provided a technique, which includes: dividing an inside of a process chamber, into which a cleaning gas is to be supplied, into three or more zones in a gas flow direction and heating the inside of the process chamber such that, in the process chamber, a temperature difference between a zone positioned on an upstream side in the gas flow direction and a zone adjacent to the zone positioned on the upstream side is greater than a temperature difference between a zone positioned on a downstream side in the gas flow direction and a zone adjacent to the zone positioned on the downstream side; and supplying the cleaning gas into the process chamber after the act of heating.Type: ApplicationFiled: September 15, 2023Publication date: January 4, 2024Applicant: Kokusai Electric CorporationInventors: Yasunobu KOSHI, Yuji URANO, Shingo NOHARA, Kazuhiro HARADA
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Publication number: 20230402281Abstract: Included are processes of (a) supplying a film-forming gas into a processing container in which a substrate is accommodated to form a film on the substrate, (b) supplying a fluorine-containing gas into the processing container in which the substrate is not accommodated to remove a deposit including the film adhered to the inside of the processing container, (c) supplying a precoat gas into the processing container in which the substrate is not accommodated and from which the deposit is removed to form a precoat film in the processing container, and (d) supplying a film-forming gas into the processing container in which a substrate is accommodated and in which the precoat film is formed to form a film on the substrate, in which, in (c), a film thickness distribution of the precoat film is adjusted in accordance with a distribution of a residual fluorine concentration in the processing container.Type: ApplicationFiled: August 25, 2023Publication date: December 14, 2023Applicant: Kokusai Electric CorporationInventors: Yasunobu Koshi, Kazuhiro Harada, Yuji Urano, Shingo Nohara
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Publication number: 20230349065Abstract: There is provided a technique that includes: (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature; (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.Type: ApplicationFiled: March 22, 2023Publication date: November 2, 2023Applicant: Kokusai Electric CorporationInventors: Takahiro MIYAKURA, Atsushi MORIYA, Yasuhiro MEGAWA, Yasunobu KOSHI, Akito HIRANO
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Publication number: 20230220546Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.Type: ApplicationFiled: February 24, 2023Publication date: July 13, 2023Applicant: Kokusai Electric CorporationInventors: Kazuhiro HARADA, Shingo NOHARA, Yuji URANO, Yasunobu KOSHI, Masayoshi MINAMI
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Patent number: 11618947Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.Type: GrantFiled: September 17, 2019Date of Patent: April 4, 2023Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Kazuhiro Harada, Shingo Nohara, Yuji Urano, Yasunobu Koshi, Masayoshi Minami
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Publication number: 20230089509Abstract: There is provided a technique capable of capable of preventing a substrate from being metal-contaminated by a component constituting a furnace opening. According to one aspect thereof, there is provided a furnace opening structure including: an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube; a lower inlet structure connected to the upper inlet structure via a second seal; and a fixing structure connected to the upper inlet structure and configured to fix the first protrusion, wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.Type: ApplicationFiled: August 10, 2022Publication date: March 23, 2023Applicant: Kokusai Electric CorporationInventors: Shinya MORITA, Seiyo NAKASHIMA, Yoshitaka ABE, Kazuhiro HARADA, Yasunobu KOSHI, Shingo NOHARA
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Publication number: 20220208544Abstract: According to one aspect of a technique of the present disclosure, there is provided a method of manufacturing a semiconductor device, including: (A) forming a film containing a predetermined element and nitrogen on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes: (a) forming a first layer by supplying a source gas containing the predetermined element and a halogen element to the substrate heated to a first temperature; (b) forming a second layer by modifying the first layer by supplying a plasma-excited first modification gas containing hydrogen free of nitrogen; and (c) forming a third layer by modifying the second layer by supplying a plasma-excited second modification gas containing nitrogen and hydrogen. A supply time TH of supplying the first modification gas in (b) is set to be longer than a supply time TN of supplying the second modification gas in (c).Type: ApplicationFiled: March 17, 2022Publication date: June 30, 2022Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Yasunobu KOSHI, Kazuyuki OKUDA, Yoshitomo HASHIMOTO, Katsuyoshi HARADA
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Publication number: 20200095678Abstract: There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.Type: ApplicationFiled: September 17, 2019Publication date: March 26, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Kazuhiro HARADA, Shingo NOHARA, Yuji URANO, Yasunobu KOSHI, Masayoshi MINAMI
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Patent number: 9970112Abstract: The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit.Type: GrantFiled: March 3, 2015Date of Patent: May 15, 2018Assignee: Hitachi Kokusai Electric Inc.Inventors: Yasunobu Koshi, Kenichi Suzaki, Akihito Yoshino
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Patent number: 9666430Abstract: A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.Type: GrantFiled: January 15, 2015Date of Patent: May 30, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yasunobu Koshi, Keigo Nishida, Kiyohiko Maeda
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Publication number: 20150176130Abstract: The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit.Type: ApplicationFiled: March 3, 2015Publication date: June 25, 2015Inventors: Yasunobu KOSHI, Kenichi SUZAKI, Akihito YOSHINO
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Publication number: 20150126021Abstract: A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.Type: ApplicationFiled: January 15, 2015Publication date: May 7, 2015Inventors: Yasunobu KOSHI, Keigo NISHIDA, Kiyohiko MAEDA
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Patent number: 8999858Abstract: The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit.Type: GrantFiled: December 26, 2012Date of Patent: April 7, 2015Assignee: Hitachi Kokusai Electric Inc.Inventors: Yasunobu Koshi, Kenichi Suzaki, Akihito Yoshino
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Patent number: 8304328Abstract: To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used.Type: GrantFiled: March 15, 2007Date of Patent: November 6, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Takahiro Maeda, Kiyohiko Maeda, Takashi Ozaki, Akihito Yoshino, Yasunobu Koshi, Yuji Urano
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Publication number: 20090087964Abstract: To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used.Type: ApplicationFiled: March 15, 2007Publication date: April 2, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Takahiro Maeda, Kiyohiko Maeda, Takashi Ozaki, Akihito Yoshino, Yasunobu Koshi, Yuji Urano