Patents by Inventor Yasunobu Onishi
Yasunobu Onishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20040236548Abstract: A computer implemented method for development profile simulation in accordance with an embodiment of the present invention includes calculating optical intensities in a photosensitive resist, calculating a spatial average value of the optical intensities, reading a measured changing ratio of a dissolution rate of the photosensitive resist relating to an alkaline concentration changed by at least one of exposure dose on the photosensitive resist, a position in the thickness direction of the photosensitive resist and an alkaline concentration of developer for the photosensitive resist, obtaining a calculated dissolution rate by using the spatial average value and the measured changing ratio, and predicting a pattern shape of the photosensitive resist from the calculated dissolution rate.Type: ApplicationFiled: January 21, 2004Publication date: November 25, 2004Inventors: Hiroko Nakamura, Shoji Mimotogi, Yasunobu Onishi
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Patent number: 6806021Abstract: Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.Type: GrantFiled: April 1, 2002Date of Patent: October 19, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Yasuhiko Sato, Yasunobu Onishi
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Patent number: 6703181Abstract: There is provided a photosensitive composition suitable for a resist material. This photosensitive composition has a high sensitivity and a high resolution with respect to a light source having a short wavelength, does not cause a phase separation in a film state, and makes it possible to stably form fine resist patterns. The photosensitive composition contains a polymer obtained by protecting an alkali-soluble group of an alkali-soluble polymer by a group which is unstable with respect to an acid, a compound which generates an acid upon being irradiated with light, at least one compound which is selected from the group consisting of an imidazole compound, an alanine compound, an adenine compound, an adenosine compound, and a quaternary ammonium salt compound, and which increases miscibility in a resist film, and a phenol compound.Type: GrantFiled: September 9, 1996Date of Patent: March 9, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Takao Hayashi, Yasunobu Onishi, Kazuo Sato, Kenji Chiba, Masataka Miyamura
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Publication number: 20030215749Abstract: A pattern forming method is disclosed which comprises providing a to-be-processed film on a substrate, providing a resist film on the to-be-processed film, patterning the resist film, providing a film of a radiosensitive compound on the to-be-processed film such that the patterned resist film is covered with the film of the radiosensitive compound, subjecting the film of the radiosensitive compound to irradiation and a development process, thus exposing an upper surface of the resist film and patterning the film of the radiosensitive compound, and removing the resist film and processing the to-be-processed film, using the patterned film of the radiosensitive compound as a mask.Type: ApplicationFiled: April 22, 2003Publication date: November 20, 2003Inventors: Hirokazu Kato, Yasunobu Onishi, Eishi Shiobara, Daisuke Kawamura, Hiroko Nakamura
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Patent number: 6576562Abstract: A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.Type: GrantFiled: December 14, 2001Date of Patent: June 10, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Junko Ohuchi, Yasuhiko Sato, Eishi Shiobara, Hisataka Hayashi, Tokuhisa Ohiwa, Yasunobu Onishi
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Patent number: 6569595Abstract: A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.Type: GrantFiled: February 24, 2000Date of Patent: May 27, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Yasuhiko Sato, Eishi Shiobara, Yasunobu Onishi, Shuji Hayase, Yoshihiko Nakano
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Publication number: 20030064323Abstract: Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.Type: ApplicationFiled: April 1, 2002Publication date: April 3, 2003Applicant: Kabushiki Kaisha ToshibaInventors: Yasuhiko Sato, Yasunobu Onishi
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Publication number: 20020119612Abstract: A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.Type: ApplicationFiled: December 14, 2001Publication date: August 29, 2002Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Junko Ohuchi, Yasuhiko Sato, Eishi Shiobara, Hisataka Hayashi, Tokuhisa Ohiwa, Yasunobu Onishi
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Patent number: 6420271Abstract: A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.Type: GrantFiled: March 23, 2001Date of Patent: July 16, 2002Assignee: Kabushiki Kaisha ToshibaInventors: Yasuhiko Sato, Eishi Shiobara, Motoyuki Sato, Yasunobu Onishi, Hiroshi Tomita, Tokuhisa Ohiwa, Junko Ohuchi, Hisataka Hayashi
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Publication number: 20020061453Abstract: A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.Type: ApplicationFiled: September 21, 2001Publication date: May 23, 2002Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yasuhiko Sato, Tsuyoshi Shibata, Junko Ohuchi, Yasunobu Onishi
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Publication number: 20010034131Abstract: A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.Type: ApplicationFiled: March 23, 2001Publication date: October 25, 2001Applicant: Kabushiki Kaisha ToshibaInventors: Yasuhiko Sato, Eishi Shiobara, Motoyuki Sato, Yasunobu Onishi, Hiroshi Tomita, Tokuhisa Ohiwa, Junko Ohuchi, Hisataka Hayashi
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Patent number: 6270948Abstract: A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.Type: GrantFiled: June 7, 1999Date of Patent: August 7, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Yasuhiko Sato, Yoshihiko Nakano, Rikako Kani, Shuji Hayase, Yasunobu Onishi, Eishi Shiobara, Seiro Miyoshi, Hideto Matsuyama, Masaki Narita, Sawako Yoshikawa
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Patent number: 6225033Abstract: An anti-reflection film has been formed on an SiO2 film on a silicon substrate formed on a silicon wafer. A chemical amplification positive resist is formed on the anti-reflection film. The resist is exposed to light. Vapor of strong alkali is applied to a surface of the chemical amplification positive resist. The entire resist is developed with a developing solution, thereby forming a resist pattern.Type: GrantFiled: October 6, 1999Date of Patent: May 1, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Yasunobu Onishi, Kentaro Matsunaga, Shoji Mimotogi, Katsuya Okumura
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Patent number: 6054254Abstract: A method of forming a pattern which comprises the steps of forming an underlying film on a work film, forming a resist film on the underlying film, exposing the underlying film and the resist film to a patterning exposure light, and developing predetermined regions thus exposed of the resist film and the underlying film with a developing solution. The underlying film has a property that the solubility thereof to the developing solution can be changed by an action of an acid. The resist film and/or the underlying film contains a compound which is capable of generating the acid.Type: GrantFiled: July 2, 1998Date of Patent: April 25, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Yasuhiko Sato, Yasunobu Onishi
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Patent number: 6025117Abstract: A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.Type: GrantFiled: December 8, 1997Date of Patent: February 15, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Yoshihiko Nakano, Rikako Kani, Shuji Hayase, Yasuhiko Sato, Seiro Miyoshi, Toru Ushirogouchi, Sawako Yoshikawa, Hideto Matsuyama, Yasunobu Onishi, Masaki Narita, Toshiro Hiraoka
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Patent number: 5994007Abstract: Disclosed is a pattern forming method, comprising the steps of providing a resist film, applying a light exposure to the resist film, with a film directly above the resist film and another film directly below the resist film being made insulative, applying a charged beam exposure to the resist film, with the film directly above the resist film and the other film directly below the resist film being made conductive, and developing the resist film to form a resist pattern.Type: GrantFiled: December 17, 1998Date of Patent: November 30, 1999Assignee: Kabushiki Kaisha ToshibaInventors: Yasuhiko Sato, Atsushi Ando, Yasunobu Onishi, Yoshihiko Nakano, Shuji Hayase, Rikako Kani
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Patent number: 5889678Abstract: In a topography simulation method, the topography of a resist pattern after curing treatment can be precisely estimated without producing a complex physical model or performing parameter measurement. Specifically, in the method of estimating the topography of a resist pattern, which is formed by selectively removing a part of a resist provided on a substrate and contracts due to curing treatment, the resist pattern is divided into a plurality of cells and the cells are contracted in accordance with a volume shrinkage amount per unit volume of the resist in the curing treatment. Then, the cells located closer to an interface between the substrate and the resist pattern are flattened to a higher degree in parallel to the substrate, and the deformed cells are brought together toward a shrinkage reference line passing through a center of a line pattern and toward the substrate.Type: GrantFiled: May 12, 1997Date of Patent: March 30, 1999Assignee: Kabushiki Kaisha ToshibaInventors: Soichi Inoue, Satoshi Tanaka, Shoji Mimotogi, Yasunobu Onishi
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Patent number: 5744281Abstract: A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) 4-phenylpyridine, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).Type: GrantFiled: May 1, 1997Date of Patent: April 28, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Hirokazu Niki, Hiromitsu Wakabayashi, Rumiko Hayase, Naohiko Oyasato, Yasunobu Onishi, Kazuo Sato, Kenji Chiba, Takao Hayashi
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Patent number: 5658706Abstract: A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) a nitrogen-containing compound, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).Type: GrantFiled: September 8, 1994Date of Patent: August 19, 1997Assignee: Kabushiki Kaisha ToshibaInventors: Hirokazu Niki, Hiromitsu Wakabayashi, Rumiko Hayase, Naohiko Oyasato, Yasunobu Onishi, Kazuo Sato, Kenji Chiba, Takao Hayashi
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Patent number: RE35821Abstract: A radiation-sensitive layer comprising as a main component a radiation-sensitive composition containing a compound capable of generating an acid when exposed to a chemical radiation and a compound having at least one linkage decomposable by an acid is formed on a substrate. An acidic coating layer is formed on the radiation-sensitive layer. The radiation-sensitive layer and the acidic coating layer are pattern-exposed to a chemical radiation. The radiation-sensitive layer and the acidic coating layer are baked and developed by using an aqueous alkaline solution to obtain a pattern comprising lines and spaces, each having a predetermined width. A fine pattern of a rectangular sectional shape can be formed without producing eaves caused by a surface inhibition layer layer, which is produced on the film surface.Type: GrantFiled: April 29, 1996Date of Patent: June 9, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Hirokazu Niki, Rumiko Hayase, Naohiko Oyasato, Yasunobu Onishi, Akitoshi Kumagae, Kazuo Sato, Masataka Miyamura, Yoshihito Kobayashi