Abstract: An electrode or wiring, an electrode pair, and a method for manufacturing the electrode or wiring. The electrode or wiring includes: particles of a layered material including one or more layers; and metal particles or a sintered metal. The one or plural layers include a layer body represented by MmXn, wherein M is at least one metal belonging to group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is 1-4, and m is greater than n and at most 5, and a modification or terminal T (T being at least one of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom) is present on the surface of the layer body.

Abstract: A temperature sensor that includes an organic-inorganic composite negative temperature coefficient thermistor and a transistor. The organic-inorganic composite negative temperature coefficient thermistor includes a thermistor layer which includes spinel-type semiconductor ceramic composition powder containing Mn, Ni and Fe and an organic polymer component, and a pair of electrode layers. The semiconductor ceramic composition powder has a molar ratio of Mn to Ni of 85/15?Mn/Ni?65/35 and a Fe content of 30 parts by mole or less when a total molar amount of Mn and Ni is regarded as 100 parts by mole, and has a peak with a local maximum value of around 29° to 31° in its X-ray diffraction pattern, a half width of which peak is 0.15 or more. The transistor is electrically connected with either one of the pair of electrode layers.

Abstract: A temperature sensor that includes a first electrode layer, a second electrode layer, and a thermistor layer between the first and second electrode layers. The thermistor layer includes a spinel-type semiconductor ceramic composition powder containing Mn, Ni, and Fe, and an organic polymer component. In the semiconductor ceramic composition powder, the molar ratio of Mn to Ni is 85/15?Mn/Ni?65/35, and when the total molar quantity of Mn and Ni is 100 parts by mole, the content of Fe is 30 parts by mole or less, and the semiconductor ceramic composition powder is 2 ?m or less in particle size.

Abstract: A temperature sensor that includes an organic-inorganic composite negative temperature coefficient thermistor and a transistor. The organic-inorganic composite negative temperature coefficient thermistor includes a thermistor layer which includes spinel-type semiconductor ceramic composition powder containing Mn, Ni and Fe and an organic polymer component, and a pair of electrode layers. The semiconductor ceramic composition powder has a molar ratio of Mn to Ni of 85/15?Mn/Ni?65/35 and a Fe content of 30 parts by mole or less when a total molar amount of Mn and Ni is regarded as 100 parts by mole, and has a peak with a local maximum value of around 29° to 31° in its X-ray diffraction pattern, a half width of which peak is 0.15 or more. The transistor is electrically connected with either one of the pair of electrode layers.

Abstract: A dielectric resin composition for a film capacitor is a mixture containing an organic material A and an organic material B. The organic material A includes at least two kinds of organic material components A1, A2, . . . having reactive groups (for example, OH, NCO) that cross-link each other. The organic material B does not have a reactive site capable of reacting with the organic material A and has a dielectric loss tan ? of 0.3% or less at a temperature of 125° C. The mixture has a glass transition temperature of 130° C. or higher and preferably 280° C. or lower.

Abstract: A temperature sensor that includes a first electrode layer, a second electrode layer, and a thermistor layer between the first and second electrode layers. The thermistor layer includes a spinel-type semiconductor ceramic composition powder containing Mn, Ni, and Fe, and an organic polymer component. In the semiconductor ceramic composition powder, the molar ratio of Mn to Ni is 85/15?Mn/Ni?65/35, and when the total molar quantity of Mn and Ni is 100 parts by mole, the content of Fe is 30 parts by mole or less, and the semiconductor ceramic composition powder is 2 ?m or less in particle size.

Abstract: To increase the heat resistance of a film capacitor, a dielectric resin composition is used as a material for a dielectric resin film used in a film capacitor, the dielectric resin composition being cured by mixing and crosslinking two or more organic materials having functional groups that react with each other to provide a cured article. At least one pair highly cohesive atomic groups which has a molecular cohesive energy equal to or higher than that of a methyl group and capable of cohering with each other due to the molecular cohesive energy is linked to the organic material. The highly cohesive atomic groups form a cohesive portion serving as pseudo-crosslinking.

Abstract: To increase the heat resistance of a film capacitor, a cured article obtained by curing a mixed solution of a polyvinyl acetal having a hydroxyl group content of 10% to 38% by weight, the number of backbone carbon atoms of the polyvinyl acetal being 100 or more, and a polyisocyanate having an isocyanate content of 1% to 50% by weight is used as a dielectric resin films material arranged between first and second counter electrodes facing each other. At least the polyvinyl acetal is subjected to high-pressure homogenization in which a shearing force is applied such that a pressure applied to the polyvinyl acetal is 50 MPa or more when the material is passed through a path having a diameter of 0.125 mm and a length of 5 mm, so that the solubility is increased to allow a curing reaction to proceed uniformly. The cured article has a glass transition temperature of 130° C. or higher and a breakdown voltage of 350 V/?m or more.

Abstract: A resin composition constituting dielectric resin films of a film capacitor includes a first atom group including at least one functional group selected from among a methylene group, an aromatic ring and an ether group and having a relatively small molar polarizability, and a second atom group including at least one functional group selected from among a hydroxyl group, an amino group and a carbonyl group and having a relatively large molar polarizability. The resin composition satisfies the condition that a value calculated from the formula (sum of absorption band intensities of first atom group)/(sum of absorption band intensities of second atom group) is 1.0 or more. Herein, as absorption band intensities of the functional groups, peak intensities detected in specific wavenumber ranges are employed.

Abstract: A resin composition constituting dielectric resin films of a film capacitor includes a first atom group including at least one functional group selected from among a methylene group, an aromatic ring and an ether group and having a relatively small molar polarizability, and a second atom group including at least one functional group selected from among a hydroxyl group, an amino group and a carbonyl group and having a relatively large molar polarizability. The resin composition satisfies the condition that a value calculated from the formula (sum of absorption band intensities of first atom group)/(sum of absorption band intensities of second atom group) is 1.0 or more. Herein, as absorption band intensities of the functional groups, peak intensities detected in specific wavenumber ranges are employed.

Abstract: A dielectric resin composition for a film capacitor is a mixture containing an organic material A and an organic material B. The organic material A includes at least two kinds of organic material components A1, A2, . . . having reactive groups (for example, OH, NCO) that cross-link each other. The organic material B does not have a reactive site capable of reacting with the organic material A and has a dielectric loss tan ? of 0.3% or less at a temperature of 125° C. The mixture has a glass transition temperature of 130° C. or higher and preferably 280° C. or lower.

Abstract: To increase the heat resistance of a film capacitor, a dielectric resin composition is used as a material for a dielectric resin film used in a film capacitor, the dielectric resin composition being cured by mixing and crosslinking two or more organic materials having functional groups that react with each other to provide a cured article. At least one pair highly cohesive atomic groups which has a molecular cohesive energy equal to or higher than that of a methyl group and capable of cohering with each other due to the molecular cohesive energy is linked to the organic material. The highly cohesive atomic groups form a cohesive portion serving as pseudo-crosslinking.

Abstract: To increase the heat resistance of a film capacitor, a cured article obtained by curing a mixed solution of a polyvinyl acetal having a hydroxyl group content of 10% to 38% by weight, the number of backbone carbon atoms of the polyvinyl acetal being 100 or more, and a polyisocyanate having an isocyanate content of 1% to 50% by weight is used as a dielectric resin films material arranged between first and second counter electrodes facing each other. At least the polyvinyl acetal is subjected to high-pressure homogenization in which a shearing force is applied such that a pressure applied to the polyvinyl acetal is 50 MPa or more when the material is passed through a path having a diameter of 0.125 mm and a length of 5 mm, so that the solubility is increased to allow a curing reaction to proceed uniformly. The cured article has a glass transition temperature of 130° C. or higher and a breakdown voltage of 350 V/?m or more.

Abstract: A composite dielectric sheet used to manufacture a multilayer electronic component. The composite dielectric sheet is flexible and has a high dielectric constant and high dielectric strength. The composite dielectric sheet contains a polyvinyl acetal resin; a high-dielectric constant filler, surface-treated with a coupling agent, dispersed in the polyvinyl acetal resin; and a crosslinking agent having two or more functional groups reactable with the polyvinyl acetal resin and the surface-treated high-dielectric constant filler. The composite dielectric sheet is suitable for use in a multilayer electronic component such as a monolithic capacitor.

Abstract: A composite dielectric sheet used to manufacture a multilayer electronic component. The composite dielectric sheet is flexible and has a high dielectric constant and high dielectric strength. The composite dielectric sheet contains a polyvinyl acetal resin; a high-dielectric constant filler, surface-treated with a coupling agent, dispersed in the polyvinyl acetal resin; and a crosslinking agent having two or more functional groups reactable with the polyvinyl acetal resin and the surface-treated high-dielectric constant filler. The composite dielectric sheet is suitable for use in a multilayer electronic component such as a monolithic capacitor.