Patents by Inventor Yasunori Kai

Yasunori Kai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
    Patent number: 7361220
    Abstract: The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.
    Type: Grant
    Filed: March 25, 2004
    Date of Patent: April 22, 2008
    Assignees: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Masashi Yoshimura, Yasunori Kai, Mamoru Imade, Yasuo Kitaoka, Hisashi Minemoto, Isao Kidoguchi
  • Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
    Publication number: 20040250747
    Abstract: The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.
    Type: Application
    Filed: March 25, 2004
    Publication date: December 16, 2004
    Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Masashi Yoshimura, Yasunori Kai, Mamoru Imade, Yasuo Kitaoka, Hisashi Minemoto, Isao Kidoguchi