Patents by Inventor Yasunori Takakuwa

Yasunori Takakuwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7194793
    Abstract: A method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device includes the step of obtaining a frequency characteristic of an edge reflection type surface acoustic wave device having a piezoelectric substrate. The edge reflection type surface acoustic wave device has a pair of edges of the piezoelectric substrate which define a predetermined distance therebetween. The piezoelectric substrate is cut at a position which defines a distance that is shorter than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be higher than the obtained frequency characteristic. The piezoelectric substrate is cut at a position which defines a distance that is longer than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be lower than the obtained frequency characteristic.
    Type: Grant
    Filed: May 13, 2004
    Date of Patent: March 27, 2007
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Michio Kadota, Yasunori Takakuwa, Seigo Hayashi, Junya Ago, Hideya Horiuchi, Mamoru Ikeura
  • Publication number: 20040261250
    Abstract: A method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device includes the step of obtaining a frequency characteristic of an edge reflection type surface acoustic wave device having a piezoelectric substrate. The edge reflection type surface acoustic wave device has a pair of edges of the piezoelectric substrate which define a predetermined distance therebetween. Then, the piezoelectric substrate is cut at at least one of a pair of positions which define a distance that is shorter than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be higher than the obtained frequency characteristic. The piezoelectric substrate is cut at at least one of a pair of positions which define a distance that is longer than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be lower than the obtained frequency characteristic.
    Type: Application
    Filed: May 13, 2004
    Publication date: December 30, 2004
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Michio Kadota, Yasunori Takakuwa, Seigo Hayashi, Junya Ago, Hideya Horiuchi, Mamoru Ikeura
  • Patent number: 6637087
    Abstract: A method of manufacturing an edge reflection type surface acoustic wave device includes the step of preparing a surface acoustic wave mother substrate having a plurality of interdigital transducers formed on one main surface thereof. A cut groove is formed in the substrate by cutting the surface acoustic wave mother substrate beginning from the one main surface side thereof. This step of forming a cut groove is repeated so as to produce a plurality of cut grooves so that the first reflection edge of the respective surface acoustic wave devices are sequentially formed. Next, similarly, cut grooves are sequentially formed on the surface acoustic wave mother substrate from the one main-face side thereof so as not to reach the other main surface thereof, whereby the second reflection edges of the respective surface acoustic wave devices are sequentially formed.
    Type: Grant
    Filed: March 17, 2000
    Date of Patent: October 28, 2003
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hideya Horiuchi, Michio Kadota, Junya Ago, Seigo Hayashi, Yasunori Takakuwa
  • Patent number: 6527884
    Abstract: An apparatus for selectively implementing a depressurized or an atmospheric hydrogen annealing process comprises a reaction chamber, a hydrogen gas introduction line for feeding hydrogen gas into the reaction chamber and an atmospheric exhaust line and a depressurized exhaust line, which are connected to the reaction chamber. By selectively switching the atmospheric exhaust line and the depressurized exhaust line, the depressurized hydrogen annealing process and the atmospheric annealing process are selectively implemented. A device for performing deoxidization process or a device for removing impurities may be further included.
    Type: Grant
    Filed: November 7, 2000
    Date of Patent: March 4, 2003
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yasunori Takakuwa, Kouji Tometsuka
  • Publication number: 20020050040
    Abstract: A method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device includes the step of obtaining a frequency characteristic of an edge reflection type surface acoustic wave device having a piezoelectric substrate. The edge reflection type surface acoustic wave device has a pair of edges of the piezoelectric substrate which define a predetermined distance therebetween. Then, the piezoelectric substrate is cut at at least one of a pair of positions which define a distance that is shorter than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be higher than the obtained frequency characteristic. The piezoelectric substrate is cut at at least one of a pair of positions which define a distance that is longer than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be lower than the obtained frequency characteristic.
    Type: Application
    Filed: August 28, 2001
    Publication date: May 2, 2002
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Michio Kadota, Yasunori Takakuwa, Seigo Hayashi, Junya Ago, Hideya Horiuchi, Mamoru Ikeura