Abstract: In a first main surface side of a silicon carbide semiconductor base, a trench is formed. A second base region of a second conductivity type is arranged at a position facing the trench in a depth direction. An end (toward a drain electrode) of the second base region of the second conductivity type, and an end (toward the drain electrode) of a first base region of the second conductivity type reach a position deeper than an end (toward the drain electrode) of a region of a first conductivity type. Thus, the electric field at a gate insulating film at the trench bottom is mitigated, suppressing the breakdown voltage of the active region and enabling breakdown voltage design of the edge termination region to be facilitated. Further, such a semiconductor device may be formed by an easy method of manufacturing.

Abstract: In a first main surface of a silicon carbide semiconductor base, a trench is formed. On a first main surface side of the silicon carbide semiconductor base, an n-type silicon carbide epitaxial layer is deposited. In a surface of the n-type silicon carbide epitaxial layer, an n-type high-concentration region is provided. In the surface of the n-type silicon carbide epitaxial layer, a first p-type base region and a second p+-type base region are selectively provided. The second p+-type base region is formed at the bottom of the trench. A depth of the n-type high-concentration region is deeper than that of the first p-type base region and the second p+-type base region. Thus, by an easy method, the electric field at a gate insulating film at the bottom of the trench is mitigated, enabling the breakdown voltage of the active region to be maintained and the ON resistance to be lowered.

Abstract: Provided is a method for producing a laminate, comprising laminating an aramid paper sheet and a polyimide film together by performing heating and pressurizing process under conditions of a temperature of 275 to 320° C. and a pressure of 50 to 400 kgf/cm. In the present invention, an aramid paper sheet-polyimide film laminate with excellent heat resistance, electrical properties, chemical resistance, mechanical properties, and the like can be manufactured by laminating the aramid paper sheet and the polyimide film in a simple method without impairing their properties.

Abstract: An arc-resistance performance evaluation device includes a plasma generator that generates plasma; and a stand on which a sheet-like test piece is placed so that the plasma generated in the plasma generator is irradiated on a front surface of said test piece, the stand includes a temperature measurement device that measures a temperature on a back surface of said test piece.

Abstract: In a first main surface side of a silicon carbide semiconductor base, a trench is formed. A second base region of a second conductivity type is arranged at a position facing the trench in a depth direction. An end (toward a drain electrode) of the second base region of the second conductivity type, and an end (toward the drain electrode) of a first base region of the second conductivity type reach a position deeper than an end (toward the drain electrode) of a region of a first conductivity type. Thus, the electric field at a gate insulating film at the trench bottom is mitigated, suppressing the breakdown voltage of the active region and enabling breakdown voltage design of the edge termination region to be facilitated. Further, such a semiconductor device may be formed by an easy method of manufacturing.

Abstract: A fabric for arc-protective garments includes first yarns and second yarns different from the first yarns. The first yarns include first modacrylic fibers, and the first modacrylic fibers contain an infrared absorber in an amount of 2.5 wt % or more with respect to a total weight of the first modacrylic fibers. The weight of the infrared absorber per unit area in the fabric for arc-protective garments is 0.05 oz/yd2 or more. An arc-protective garment includes the fabric for arc-protective garments.

Abstract: A motor bobbin having a bobbin body portion around which a coil is to be wound, and flange portions provided integrally to both end portions of the bobbin body portion. The bobbin includes: a molded resin article formed by using a polymer having amide linkages, and an insulating paper having an aramid paper made of an aramid fibrid and an aramid short fiber. The surface of the molded resin article and the aramid paper are directly bonded to each other. The motor bobbin can cope with an increased efficiency and an increased power output of a motor generator or the like.

Abstract: In a first main surface side of a silicon carbide semiconductor base, a trench is formed. A second base region of a second conductivity type is arranged at a position facing the trench in a depth direction. An end (toward a drain electrode) of the second base region of the second conductivity type, and an end (toward the drain electrode) of a first base region of the second conductivity type reach a position deeper than an end (toward the drain electrode) of a region of a first conductivity type. Thus, the electric field at a gate insulating film at the trench bottom is mitigated, suppressing the breakdown voltage of the active region and enabling breakdown voltage design of the edge termination region to be facilitated. Further, such a semiconductor device may be formed by an easy method of manufacturing.

Abstract: In a first main surface of a silicon carbide semiconductor base, a trench is formed. On a first main surface side of the silicon carbide semiconductor base, an n-type silicon carbide epitaxial layer is deposited. In a surface of the n-type silicon carbide epitaxial layer, an n-type high-concentration region is provided. In the surface of the n-type silicon carbide epitaxial layer, a first p-type base region and a second p+-type base region are selectively provided. The second p+-type base region is formed at the bottom of the trench. A depth of the n-type high-concentration region is deeper than that of the first p-type base region and the second p+-type base region. Thus, by an easy method, the electric field at a gate insulating film at the bottom of the trench is mitigated, enabling the breakdown voltage of the active region to be maintained and the ON resistance to be lowered.

Abstract: A silicon carbide semiconductor device, including a silicon carbide substrate, a drift layer provided on a front surface of the silicon carbide substrate, an embedded layer selectively provided in a surface layer of the drift layer, an epitaxial layer provided on the drift layer, a channel layer provided on the epitaxial layer, a source region selectively provided in a surface layer of the channel layer, a trench penetrating the source region and the channel layer and reaching the epitaxial layer, a gate electrode provided in the trench via a gate insulating film, a source electrode in contact with the channel layer and the source region, and a drain electrode provided on a rear surface of the silicon carbide substrate. The embedded layer is arranged underneath the trench in a depth direction. A longitudinal direction of the trench, which is perpendicular to the depth direction, is parallel to the off-direction of the silicon carbide substrate.

Abstract: Each first p+-type region is provided between adjacent trenches embedded with a MOS gate and is in contact with a p-type base region. Second p+-type regions face a bottom and bottom corner portions of the trenches in a depth direction. An n-type CS region is a current spread layer provided between the first p+-type regions and the second p+-type regions. The n-type CS region is provided only in an active region and an end thereof is positioned at a boundary of the active region and an edge termination region. Further, the n-type CS region extends to be flush with or farther inward than an outermost first p+-type region. An outermost p++-type contact region extends from a drop between the active region and the edge termination region to the edge termination region and extends beyond the n-type CS region.

Abstract: Each first p+-type region is provided between adjacent trenches embedded with a MOS gate and is in contact with a p-type base region. Second p+-type regions face a bottom and bottom corner portions of the trenches in a depth direction. An n-type CS region is a current spread layer provided between the first p+-type regions and the second p+-type regions. The n-type CS region is provided only in an active region and an end thereof is positioned at a boundary of the active region and an edge termination region. Further, the n-type CS region extends to be flush with or farther inward than an outermost first p+-type region. An outermost p++-type contact region extends from a drop between the active region and the edge termination region to the edge termination region and extends beyond the n-type CS region.

Abstract: A charge pump circuit includes a capacitor, a first switch between the capacitor and a power supply terminal, a second switch between the capacitor and an output terminal, a third switch between the output terminal and the capacitor, a fourth switch between the capacitor and a ground terminal, and a control unit configured to generate control signals for the switches. The control signals include first signals generated during a first period that cause first and third switches to be in an ON state and second and fourth switches to be in an OFF state, second signals generated during a second period that cause first and third switches to be in an OFF state and second and fourth switches to be in an ON state, and third signals generated between the first and second periods, that cause the ON/OFF state of each of the switches to be switched at different times.

Abstract: Provided is a motor bobbin around which a winding wire is wound, said motor bobbin comprising insulating paper and a resin molded body. The insulating paper and the resin molded body are coupled and fixed together without using an adhesive agent. Surfaces of the insulating paper which are in contact with the resin molded body are configured using aramid paper comprising an aramid fibrid and aramid short fibers. Resin is melt extruded and thermal-fusion bonded upon the aramid paper comprising the aramid fibrid and the aramid short fibers, and the surfaces configured from the aramid paper are surface treated to obtain the insulating paper. The motor bobbin is obtained by bringing melted portions of the resin molded body into contact with the top of the aramid paper.

Abstract: In a method for manufacturing a motor bobbin around which a coil is wound, an insulating sheet and a core material are disposed within the cavity of an injection mold, and the motor bobbin is formed by the injection mold into which a resin is injected. The motor bobbin consists of the insulating sheet and a resin molded body.

Abstract: A current command value in a period from a time when a relay switch is turned on until charging of an inverter capacitor is completed is set to a value smaller than a value corresponding to the smallest one of rated currents of components included in a circuit, and is set to a value smaller than a maximum current value in a safe operating area of a switching element.

Abstract: An arc resistant acrylic fiber includes an acrylic polymer. The arc resistant acrylic fiber also includes an infrared absorber in an amount of 1 wt % to 30 wt % with respect to a total weight of the acrylic polymer.

Abstract: In a method for manufacturing a motor bobbin around which a coil is wound, an insulating sheet and a core material are disposed within the cavity of an injection mold, and the motor bobbin is formed by the injection mold into which a resin is injected. The motor bobbin consists of the insulating sheet and a resin molded body.

Abstract: A charge pump circuit includes a capacitor, a first switch between the capacitor and a power supply terminal, a second switch between the capacitor and an output terminal, a third switch between the output terminal and the capacitor, a fourth switch between the capacitor and a ground terminal, and a control unit configured to generate control signals for the switches. The control signals include first signals generated during a first period that cause first and third switches to be in an ON state and second and fourth switches to be in an OFF state, second signals generated during a second period that cause first and third switches to be in an OFF state and second and fourth switches to be in an ON state, and third signals generated between the first and second periods, that cause the ON/OFF state of each of the switches to be switched at different times.

Abstract: A traveling drive device for a dump truck is provided with an axle housing mounted to a vehicle body, a wheel mounting tube rotatably provided on the outer periphery side of the axle housing, a disk holding cylinder provided on the axial outside of the wheel mounting tube, a brake disk mounted to the disk holding cylinder, and a brake device for applying braking to the brake disk. The disk holding cylinder is configured by a cylindrical body to be mounted to the wheel mounting tube and a plurality of disk mounting legs provided on the cylindrical body. A plurality of U-shaped projections are provided on the outer periphery side of the brake disk at positions corresponding to the respective disk mounting legs. A recessed groove which fits on the disk mounting leg so as to hold a distal end thereof is provided in each of the U-shaped projections.