Abstract: Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reactively with the solid body through a dielectric member, whereby a solid state element having a negative differential conductivity is obtained. Such a type of negative-resistance solid state element, together with its various modes of embodimental construction disclosed herein, affords a superior solid state element which is applicable to amplifiers, oscillators, logic memories, and the like of millimeter or submillimeter bands.

Abstract: In a high electric field domain device composed of a plurality of circuit elements each provided with a high electric field domain-generating electrode and a high electric field domain-suppressing electrode, logic operations can be performed by preparatorily applying affirmative signals and their corresponding negative signals to the suppressing electrodes of the individual circuit elements and subsequently applying pulse-coded signals of affirmations and negations to the generating electrodes of the circuit elements which have had the affirmative and corresponding negative signals applied in advance thereto.

Abstract: A transmission line is disclosed which comprises a conductive layer, a resistive semiconductor layer disposed on the conductive layer and a blocking electrode disposed on the resistive semiconductor layer. By applying a biasing voltage between the blocking electrode and the conductive layer, a depletion layer is produced in the resistive semiconductor layer, the depletion layer formed in the semiconductor layer being used as a medium for transmission of electromagnetic wave.

Abstract: Disclosed is a bulk semiconductor device which employs a semiconductor element exhibiting negative conductivity under a high electric field. Said semiconductor element has at least two regions and at least one bridge portion and each region thereof is connected with the region adjacent thereto by a bridge portion. Means for controlling the lateral spatial growth of a high electric field domain is provided on or near each bridge portion. The growth of a high electric field domain generated in one of the regions into the adjacent region is controlled by applying a signal to said controlling means.

Abstract: A method of controlling magnetic strip domains is disclosed wherein a magnetic material having at least one ion-implanted region is placed under a bias magnetic condition which permits magnetic strip domains to exist in said magnetic material and subjected to one or more control magnetic fields to thereby generate and/or control magnetic strip domains.