Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.

Abstract: A fiber laser device includes a pumping light source, an amplifying fiber, an input side fiber fusion-spliced on an input side of the amplifying fiber and formed with a HR-FBG, an output side fiber fusion-spliced on an output side of the amplifying fiber and formed with an OC-FBG having a reflectivity smaller than that of the HR-FBG, an output end, and a mode filter, wherein the input side fiber or an intermediate fiber disposed between the amplifying fiber and the input side fiber is fusion-spliced with the amplifying fiber via a fusion splice portion, and at least a portion of the mode filter is disposed in a region between the fusion splice portion and a position separated from the fusion splice portion by a coherence length of beating caused by mode interference of signal light propagating in the amplifying fiber.

Abstract: A fiber laser device includes: a first pumping light source that outputs a first pumping light of a first wavelength; a second pumping light source that outputs a second pumping light of a second wavelength that is shorter than the first wavelength; an amplifying fiber that includes a core including an active element that is configured to be excited by the first pumping light and the second pumping light; an HR-FBG (High Reflectivity-Fiber Bragg Grating) on a side of a first end of the amplifying fiber; an OC-FBG (Output Coupler-Fiber Bragg Grating) disposed on a side of a second end of the amplifying fiber and that has a reflectance lower than a reflectance of the HR-FBG; and a first coupler that couples the first pumping light to the amplifying fiber from the side of the first end.

Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.

Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.

Abstract: Provided is a composite sound-absorbing material that can exhibit sound absorption properties in a broad range of low frequencies, intermediate frequencies, and high frequencies even in a low-basis-weight region having low thickness. The composite sound-absorbing material according to the present invention is configured from two or more layers including a base material and a skin material, the skin material being positioned on the outermost layer, wherein the composite sound-absorbing material is characterized in that the ratio (skin material:base material) of the surface area (m2/m2) per unit area of the skin material and the surface area (m2/m2) per unit area of the base material is at least 1:5 and less than 1:40.

Abstract: A fiber laser device includes a pumping light source, an amplifying fiber, an input side fiber fusion-spliced on an input side of the amplifying fiber and formed with a HR-FBG, an output side fiber fusion-spliced on an output side of the amplifying fiber and formed with an OC-FBG having a reflectivity smaller than that of the HR-FBG, an output end, and a mode filter, wherein the input side fiber or an intermediate fiber disposed between the amplifying fiber and the input side fiber is fusion-spliced with the amplifying fiber via a fusion splice portion, and at least a portion of the mode filter is disposed in a region between the fusion splice portion and a position separated from the fusion splice portion by a coherence length of beating caused by mode interference of signal light propagating in the amplifying fiber.

Abstract: Provided are a non-woven cloth and a layered non-woven cloth that are preferred as a skin material for a composite sound-absorbing material, which has excellent moldability and exceptional shape stability, and with which it is possible to achieve an adequate sound-absorption effect even in thin low-weight regions. The present invention pertains to: a non-woven cloth having a layered structure in which at least one ultrafine fiber layer (M) having an average fiber diameter of 0.

Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element; a sealing resin covering the light emitting element; and a support member including a base and supporting the light emitting element and the sealing resin, the base including a base main surface facing one side of first direction, a base back surface facing the other side of the first direction, a pair of first base side surfaces opposite each other in second direction orthogonal to the first direction, and a pair of second base side surfaces opposite each other in third direction orthogonal to the first and second directions, wherein the support member includes a raised plane raised from the base main surface in the first direction, and wherein the plane is exposed from the sealing resin and includes a portion extending from one edge to the other edge in the third direction when viewed in the first direction.

Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.

Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

Abstract: Disclosed is a method for producing a fine powder. Two or more kinds of original materials are suspended and liquefied inert gas to form two or more kinds of slurries wherein each slurry contains at least one or more different kinds of original materials. Granular dry ice grinding medium is put into the slurries. The slurries are individually stirred and the original materials are pulverized into submicron-sized or nano-sized particles in the liquefied inert gas. The slurries are thereafter mixed. The liquefied inert gas is vaporized and the granular dry ice is sublimated. A mixture of the particles of the two or more kinds of original materials is recovered.

Abstract: A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): 3 ? ? 4 ? n + 0.30 × ( ? 4 ? n ) ? T ? 3 ? ? 4 ? n + 0.45 × ( ? 4 ? n ) ( 1 ) wherein ? is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

Abstract: A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): 3 ? ? 4 ? n + 0.30 × ( ? 4 ? n ) ? T ? 3 ? ? 4 ? n + 0.45 × ( ? 4 ? n ) ( 1 ) wherein ? is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element; a sealing resin covering the light emitting element; and a support member including a base and supporting the light emitting element and the sealing resin, the base including a base main surface facing one side of first direction, a base back surface facing the other side of the first direction, a pair of first base side surfaces opposite each other in second direction orthogonal to the first direction, and a pair of second base side surfaces opposite each other in third direction orthogonal to the first and second directions, wherein the support member includes a raised plane raised from the base main surface in the first direction, and wherein the plane is exposed from the sealing resin and includes a portion extending from one edge to the other edge in the third direction when viewed in the first direction.

Abstract: An LED light emitting device with good color mixing property is provided. The LED light emitting device including a rectangular substrate having a short-side and a long-side and a first LED element, a second LED element and a third LED element that are mounted on a surface of the substrate and emit light with wavelengths different from one another, wherein the first LED element and the second LED element are mounted on the substrate so that a first distance from the short-side to a mounting position of the first LED element in the long-side direction of the substrate and a second distance from the short-side to a mounting position of the second LED element in the long-side direction are the same.

Abstract: A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.

Abstract: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.