Patents by Inventor Yasuo Namikawa

Yasuo Namikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5707441
    Abstract: In order to prepare a large yttrium or lanthanoid based oxide superconductor crystal of higher quality, a method and an apparatus which can stably control the shape of a pulled crystal and stably maintain growth of the crystal from a melt are provided. A crystal of an oxide having a structure of RBa.sub.2 Cu.sub.3 O.sub.7-X (R: yttrium or lanthanoid element, 0.ltoreq.X.ltoreq.1) is pulled from a raw material melt which is stored in a crucible by a rotary crystal pulling shaft. During such pulling, a position of the surface of the raw material melt is measured with time to obtain a lowering speed of the surface in a direction substantially parallel to the crystal pulling direction, for adjusting the lifting speed of the crystal pulling shaft by this lowering speed.
    Type: Grant
    Filed: December 8, 1995
    Date of Patent: January 13, 1998
    Assignees: Sumitomo Electric Industries, Ltd., International Superconductivity Technology Center
    Inventors: Yasuo Namikawa, Yuh Shiohara, Shoji Tanaka
  • Patent number: 5632811
    Abstract: In order to stably retain an oxide-based melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen at a prescribed temperature with no impurity contamination thereby preparing a large oxide crystal of high quality from the melt, an oxide melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen is stored in a first crucible, which in turn is held in a second crucible. The first crucible is made of a material which is an oxide of at least one element forming the melt having a melting point higher by at least 10.degree. C. than a melt retention temperature and causing no structural phase transition up to a temperature higher by 10.degree. C. than the aforementioned prescribed temperature, with solubility of not more than 5 atomic percent with respect to the melt in a temperature range from the room temperature to a temperature higher by 10.degree. C. than the melt retention temperature.
    Type: Grant
    Filed: April 12, 1995
    Date of Patent: May 27, 1997
    Assignees: Sumitomo Electric Industries, Ltd., International Superconductivity Technology Center
    Inventors: Yasuo Namikawa, Yasuji Yamada, Satoshi Koyama, Yuh Shiohara, Shoji Tanaka
  • Patent number: 4994437
    Abstract: A method of manufacturing an oxide superconductor by heating a raw material for an oxide superconductor composed of MBa.sub.2 Cu.sub.3 O.sub.7-.delta., where M represents at least a single element selected from a group of Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, to a temperature higher than a peritectic reaction temperature for melting the same and thereafter reducing the temperature to the peritectic reaction temperature to crystallize the oxide superconductor by peritectic reaction. A method of forming a dispersion solution of powder of a raw material for an oxide superconductor and applying the same on a substrate to prepare a thick film. A method of dipping a single crystal of M.sub.2 BaCuO.sub.5 in a molten solution of a mixture of BaCuO.sub.2 and CuO to form a thin film of an oxide superconductor on the single crystal. A method of manufacturing a bulky oxide superconductor by dipping a porous sintered material of M.sub.2 BaCuO.sub.5 in a molten solution of a mixture of BaCuO.sub.2 and CuO.
    Type: Grant
    Filed: November 28, 1988
    Date of Patent: February 19, 1991
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuko Torii, Yasuo Namikawa, Masami Tatsumi