Abstract: The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Q1 to Q5 and a second group of a protection circuit having a plurality of bipolar transistors.

Abstract: The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Q1 to Q5 and a second group of a protection circuit having a plurality of bipolar transistors.

Abstract: The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Q1 to Q5 and a second group of a protection circuit having a plurality of bipolar transistors.

Abstract: There is disclosed a liquid-cooled electronic device. Semiconductor devices are mounted on a substrate of a semiconductor module immersed in a cooling liquid. A wire-like member is provided in the vicinity of a cooling medium ejection port of each cooling medium supply member which cools a respective one of the semiconductor devices by a jet of the cooling liquid. With this arrangement, the flow of the cooling liquid downstream of the wire-like member is disturbed to promote the boiling over the entire surface of the semiconductor device, and when the semiconductor device is to be cooled, a transient temperature rise is reduced at the time of starting the energization of the semiconductor device, thereby stabilizing the temperature of the semiconductor device.

Abstract: An apparatus for cooling semiconductor devices includes a module for cooling semiconductor devices; a refrigerant cooling device for receiving via an outlet pipe the refrigerant discharged through an outlet port of the module to cool the refrigerant; a refrigerant circulation pump for receiving, via a suction pipe, the refrigerant cooled by the refrigerant cooling device and sending the refrigerant to the module via an inlet pipe; and a refrigerant-flow stabilizing mechanism for stabilizing a refrigerant circulation flow discharged from the refrigerant circulation pump to be returned to the refrigerant circulation pump via the module and the refrigerant cooling device. Since the refrigerant-flow stabilizing mechanism stabilize the refrigerant flow, the refrigerant flow can be stably circulated so that the semiconductor devices in the module are stably cooled.