Patents by Inventor Yasushi Hattori

Yasushi Hattori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140339978
    Abstract: According to one embodiment, the phosphor exhibits a luminescence peak within a wavelength range of 500 to 600 nm when it is excited with light having an emission peak within a wavelength range of 250 to 500 nm. The phosphor has a composition represented by (M1-xCex)2yAlzSi10-zOuNwBs (M represents Sr and a part of Sr may be substituted by at least one selected from the group consisting of Ba, Ca and Mg; and x, y, z, u, w and s satisfy 0<x?1, 0.8?y?1.1, 2?z?3.5, 1<u?1, 1.5?z?u, 13?u+w?15, and 0<s<0.245.
    Type: Application
    Filed: February 20, 2014
    Publication date: November 20, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Aoi Okada, Masahiro Kato, Keiko Albessard, Yumi Fukuda, Iwao Mitsuishi, Yasushi Hattori
  • Publication number: 20140314658
    Abstract: The method of manufacturing magnetic particles, wherein the magnetic particles are magnetic particles for magnetic recording, and includes subjecting starting material magnetic particles to glass component-adhering treatment to be adhered with a glass component, and subjecting the magnetic particles after the glass component-adhering treatment to coercive force-reducing treatment with heating, to provide magnetic particles having lower coercive force than the starting material magnetic particles.
    Type: Application
    Filed: April 22, 2014
    Publication date: October 23, 2014
    Applicant: FUJIFILM CORPORATION
    Inventor: Yasushi HATTORI
  • Publication number: 20140299904
    Abstract: A light emitting device according to embodiments includes a light emitting element emitting light having a peak wavelength of 425 nm or more and 465 nm or less, a first phosphor emitting light having a peak wavelength of 485 nm or more and 530 nm or less, a second phosphor emitting light having a peak wavelength longer than that of the first phosphor, and a third phosphor emitting light having a peak wavelength longer than that of the second phosphor. Then, when the peak wavelength of the light emitting element is ?0 (nm) and the peak wavelength of the first phosphor is ?1 (nm), a relation of 30??1??0?70 is satisfied.
    Type: Application
    Filed: March 11, 2014
    Publication date: October 9, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yasushi HATTORI, Masahiro KATO, Yumi FUKUDA, Iwao MITSUISHI
  • Publication number: 20140265818
    Abstract: The embodiment of the present disclosure provides yellow luminescent substance having high luminous efficiency. This fluorescent substance is represented by the formula (1): (M1-xREx)2yAlzSi10-zOuNwCla??(1) (in the formula, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Li, Na and K), and it emits luminescence with a peak within 500 to 600 nm when excited by light of 250 to 500 nm.
    Type: Application
    Filed: February 25, 2014
    Publication date: September 18, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Aoi Okada, Masahiro Kato, Keiko Albessard, Yumi Fukuda, Iwao Mitsuishi, Yasushi Hattori
  • Publication number: 20140265819
    Abstract: The embodiment of the present disclosure provides a phosphor having such high luminous efficiency as to be capable of realizing a light-emitting device suffering less from color drift even when working with high power. This phosphor is a Ce-activated phosphor having a crystal structure of Sr2Si7Al3ON13, and emitting luminescence with a peak wavelength of 500 to 600 nm under excitation by light with a peak wavelength of 250 to 500 nm. The XRD profile of the phosphor measured with Cu—K? line radiation according to Bragg-Brendano method shows diffraction lines having the intensities I0 and I1 at diffraction angles 2?s in the ranges of 31.55-31.85° and 24.75-250.5°, respectively, on the condition that the ratio of I1/I0 is 0.24 or less.
    Type: Application
    Filed: February 28, 2014
    Publication date: September 18, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Keiko ALBESSARD, Yumi FUKUDA, Kunio ISHIDA, Iwao Mitsuishi, Naotoshi Matsuda, Aoi Okada, Yasushi Hattori, Ryosuke Hiramatsu, Masahiro Kato
  • Patent number: 8836211
    Abstract: A white light emitting device according to an embodiment includes: a light emitting element having a peak wavelength in a wavelength range of 430 nm or more and 470 nm or less; a first fluorescent material emits light with a first peak wavelength of 525 nm or more and 560 nm or less; a second fluorescent material emits light with a second peak wavelength longer than the first peak wavelength; and a third fluorescent material emits light with a third peak wavelength of 620 nm or more and 750 nm or less, which is longer than the second peak wavelength. The first fluorescent material and the second fluorescent material has a composition of MSi?O?N?, and when the first peak wavelength is denoted by ?1 (nm), whereas the second peak wavelength is denoted by ?2 (nm), 1100??1+?2 and ?2??1?60 are satisfied.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: September 16, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasushi Hattori, Aoi Okada, Ryosuke Hiramatsu, Kunio Ishida, Masahiro Kato
  • Publication number: 20140252391
    Abstract: A light-emitting device of an embodiment includes a light-emitting element emitting blue excitation light and a first phosphor excited by the blue excitation light and emitting fluorescence. A peak wavelength of the fluorescence is not shorter than 520 nm and shorter than 660 nm and the peak wavelength of the fluorescence shifting in the same direction when a peak wavelength of the blue excitation light shifts. The first phosphor is one of a yellow phosphor emitting yellow fluorescence, a green phosphor emitting green fluorescence, a yellow-green/yellow phosphor emitting yellow-green/yellow fluorescence and a red phosphor emitting red fluorescence.
    Type: Application
    Filed: February 20, 2014
    Publication date: September 11, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kunio ISHIDA, Keiko ALBESSARD, Yasushi HATTORI, Iwao MITSUISHI, Yumi FUKUDA, Ryosuke HIRAMATSU, Aoi OKADA, Masahiro KATO
  • Publication number: 20140219069
    Abstract: The magnetic recording medium is a particulate magnetic recording medium for heat-assisted recording, as well as includes a magnetic layer comprising ferromagnetic powder and binder on a nonmagnetic organic material support and a heat-diffusing layer of higher thermal conductivity than the magnetic layer between the nonmagnetic organic material support and the magnetic layer.
    Type: Application
    Filed: February 4, 2014
    Publication date: August 7, 2014
    Applicant: FUJIFILM Corporation
    Inventors: Yasushi HATTORI, Hidehiro MOCHIZUKI, Toshio SASAKI
  • Publication number: 20140212693
    Abstract: The magnetic recording medium includes a magnetic layer containing a ferromagnetic powder and a binder on a nonmagnetic support, wherein the ferromagnetic powder is an ?-iron oxide powder, and the magnetic layer comprises a compound comprising at least one substituent selected from the group consisting of a hydroxyl group and a quaternary ammonium salt group.
    Type: Application
    Filed: January 30, 2014
    Publication date: July 31, 2014
    Applicant: FUJIFILM Corporation
    Inventor: Yasushi HATTORI
  • Publication number: 20140175971
    Abstract: The embodiment of the present disclosure provides a light-emitting device capable of both realizing neutral white color and having high luminous efficiency. The device has a blue-light emitting semi-conductor element and a luminescent layer containing a mixture of fluorescent substances. The mixture contains first and second phosphors. The first phosphor is activated with Ce and emits luminescence with a peak wavelength of 540 to 560 nm, and the second phosphor emits luminescence with a peak wavelength of 580 to 610 nm and is represented by the following formula (2): (Sr1-x2Eux2) Sia2Alb2Oc2Nd2Ce2 ??(2).
    Type: Application
    Filed: December 19, 2013
    Publication date: June 26, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Naotoshi MATSUDA, Yasushi Hattori, Yumi Fukuda, Iwao Mitsuishi, Keiko Albessard
  • Patent number: 8753530
    Abstract: An aspect of the present invention relates to a method of preparing a magnetic particle, which comprises attaching a transition metal-containing organic compound to a surface of a hard magnetic particle and then thermally decomposing the transition metal-containing organic compound to obtain the magnetic particle.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: June 17, 2014
    Assignees: FUJIFILM Corporation, Tohoku University
    Inventors: Yasushi Hattori, An-Pang Tsai, Satoshi Kameoka
  • Publication number: 20140151595
    Abstract: The method of manufacturing hexagonal ferrite magnetic particles includes providing hexagonal ferrite magnetic particles by conducting calcination of particles comprising an iron salt and an alkaline earth metal salt to cause ferritization; and further includes preparing the particles comprising an iron salt and an alkaline earth metal salt by adhering a glass component, followed by the alkaline earth metal salt, to the iron salt; and conducting calcination of the particles prepared to form a calcined product in which hexagonal ferrite is detected as a principal component in X-ray diffraction analysis.
    Type: Application
    Filed: December 2, 2013
    Publication date: June 5, 2014
    Applicant: FUJIFILM Corporation
    Inventors: Yasushi HATTORI, Kazufumi OMURA
  • Patent number: 8729575
    Abstract: The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(?5.35e19)2?(X?2.70e19)2}1/2?4.63e19 holds.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: May 20, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Jongil Hwang, Hung Hung, Yasushi Hattori, Rei Hashimoto, Shinji Saito, Masaki Tohyama, Shinya Nunoue
  • Publication number: 20140091501
    Abstract: The method of manufacturing hexagonal ferrite magnetic particles, which includes providing hexagonal ferrite magnetic particles by conducting calcination of particles comprising an alkaline earth metal salt and an iron salt to cause ferritization; and further includes causing a glass component to adhere to the particles and then conducting the calcination of the particles to form a calcined product in which hexagonal ferrite is detected as a principal component in X-ray diffraction analysis; and removing the glass component from a surface of the calcined product that has been formed.
    Type: Application
    Filed: September 27, 2013
    Publication date: April 3, 2014
    Applicant: FUJIFILM Corporation
    Inventors: Yasushi HATTORI, Kazufumi OMURA
  • Patent number: 8649408
    Abstract: According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
    Type: Grant
    Filed: September 2, 2010
    Date of Patent: February 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Rei Hashimoto, Maki Sugai, Jongil Hwang, Yasushi Hattori, Shinji Saito, Masaki Tohyama, Shinya Nunoue
  • Patent number: 8569943
    Abstract: According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr1-xEux)aSibAlOcNd??formula 1 wherein x, a, b, c and d satisfy following condition: 0<x?0.16, 0.50?a?0.70, 2.0?b?2.5 0.45?c?1.2, 3.5?d?4.5, and 3.6?d/c?8.0.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: October 29, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Iwao Mitsuishi, Naotoshi Matsuda, Yumi Fukuda, Keiko Albessard, Aoi Okada, Masahiro Kato, Ryosuke Hiramatsu, Yasushi Hattori, Shinya Nunoue
  • Publication number: 20130234584
    Abstract: A white light emitting device according to an embodiment includes: a light emitting element having a peak wavelength in a wavelength range of 430 nm or more and 470 nm or less; a first fluorescent material emits light with a first peak wavelength of 525 nm or more and 560 nm or less; a second fluorescent material emits light with a second peak wavelength longer than the first peak wavelength; and a third fluorescent material emits light with a third peak wavelength of 620 nm or more and 750 nm or less, which is longer than the second peak wavelength. The first fluorescent material and the second fluorescent material has a composition of MSi?O?N?, and when the first peak wavelength is denoted by ?1 (nm), whereas the second peak wavelength is denoted by ?2 (nm), 1100??1+?2 and ?2??1?60 are satisfied.
    Type: Application
    Filed: August 29, 2012
    Publication date: September 12, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yasushi HATTORI, Aoi Okada, Ryosuke Hiramatsu, Kunio Ishida, Masahiro Kato
  • Publication number: 20130234591
    Abstract: A white light emitting device of an embodiment includes: a light emitting element having a peak wavelength in a wavelength range from 430 to 470 nm both inclusive, a first fluorescent material formed over the light emitting element, and emitting light having a first peak wavelength of 530 to 580 nm both inclusive and having a first half width, and a second fluorescent material formed over the light emitting element, and emitting light having a second peak wavelength that is longer than the first peak wavelength and ranges from 570 to 620 nm both inclusive, and having a second half width that is 100 nm or less and is equal to or narrower than the first half width.
    Type: Application
    Filed: November 15, 2012
    Publication date: September 12, 2013
    Inventors: Yasushi Hattori, Naotoshi Matsuda, Kunio Ishida, Aoi Okada, Ryosuke Hiramatsu, Masahiro Kato, Iwao Mitsuishi
  • Publication number: 20130234585
    Abstract: According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008?MCa/(MSr+MCa)?0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.
    Type: Application
    Filed: August 31, 2012
    Publication date: September 12, 2013
    Inventors: Keiko Albessard, Masahiro Kato, Yumi Fukuda, Iwao Mitsuishi, Takahiro Sato, Shigeya Kimura, Aoi Okada, Naotoshi Matsuda, Ryosuke Hiramatsu, Yasushi Hattori, Kunio Ishida, Hironori Asai
  • Publication number: 20130229106
    Abstract: According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr1-xEux)aSibAlOcNd??formula 1 wherein x, a, b, c and d satisfy following condition: 0<x?0.16, 0.50?a?0.70, 2.0?b?2.5 0.45?c?1.2, 3.5?d?4.5, and 3.6?d/c?8.0.
    Type: Application
    Filed: August 31, 2012
    Publication date: September 5, 2013
    Inventors: Iwao MITSUISHI, Naotoshi MATSUDA, Yumi FUKUDA, Keiko ALBESSARD, Aoi OKADA, Masahiro KATO, Ryosuke HIRAMATSU, Yasushi HATTORI, Shinya NUNOUE