Abstract: The present invention provides an optical pickup device including: a light source for emitting light in a first wavelength range including a wavelength of 405 nm; an optical element for transmitting the light emitted from the light source and guiding the emitted light to an optical disc, and for transmitting light reflected from the optical disc and guiding the reflected light to a detector unit; a supporting member for supporting the optical element through an adhesive; a first light blocking member for blocking the light emitted from the light source from entering the adhesive when the optical element guides the emitted light to the optical disc; and a second light blocking member for blocking the light reflected from the optical disc from entering the adhesive when the optical element guides the reflected light to the detector unit.

Abstract: To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below. where, R1, R2, R3, and R4 may be the same or different and at least one of them represents a functional group containing any of a hydrocarbon and an unsaturated hydrocarbon.

Abstract: A dichroic mirror is a wedge-shaped quadrangular prism whose cross-section is a trapezoid having an upper base d and a lower base d+?d. The dichroic mirror receives on its top surface parallel light emitted from a collimating lens and reflects, off the top surface, most of the parallel light towards a wavelength plate. Moreover, the dichroic mirror transmits, through the top surface, part of the parallel light to output the part of the parallel light from a bottom surface facing the top surface toward a front monitor. The dichroic mirror has, on the bottom surface thereof, an inclination of an angle ? with respect to the top surface in a direction where a normal vector N of the bottom surface intersects with an xy-plane formed of: an optical axis x of incident light from the collimating lens; and an optical axis y of light emitted towards the wavelength plate.

Abstract: An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si??General Formula (1) where X is equal to 2Y and is an integer of 1 or more.

Abstract: The present invention provides an optical device including: a light source; an optical element to be irradiated with light emitted from the light source; and a supporting member for supporting the optical element through a cured product of an adhesive. This cured product of the adhesive contains a thermoplastic elastic material. The present invention also provides an optical device including: a light source; an optical element to be irradiated with light emitted from the light source; and a supporting member for supporting the optical element through a cured product of an adhesive. This cured product of the adhesive has a Young's modulus of at least 1.0E+5 Pa but less than 1.0E+7 Pa in an exponential expression, in a temperature range that the cured product of the adhesive reaches due to heat generation during operation.

Abstract: A control state of the vehicle is switched upon operation of a control switch. Besides, a mode of travel for a travel of a vehicle is selected by operation of a travel mode selection portion. Then, it is determined whether the recommended control state recommended for the selected mode of travel and the actual control state are the same. If it is determined that they are not the same, that is, that there is a deviation between the recommended control state and the actual control state, an operation method for a control switch for realizing the control state recommended for the selected mode of travel is presented to a driver.

Abstract: A manufacturing method of a semiconductor device including an LDMOS transistor includes: a process (a) of forming a first conductive well diffusion layer in the semiconductor substrate; a process (b) of sequentially forming a gate insulator film, a gate conductive film, and a photoresist film on a region on the semiconductor substrate corresponding to the well diffusion layer; a process (c) of performing photolithography to remove a part of the photoresist film formed in a predetermined region, and etching the gate conductive film using a remaining part of the photoresist film as a mask so as to form an opening in the predetermined region; a process (d) of doping second conductive impurity ions using a remaining part of the gate conductive film and the remaining part of the photoresist film as a mask so as to form the body layer; and a process (e) of removing the remaining part of the gate conductive film except a part corresponding to the gate electrode formed based on a part that constitutes a lateral surfa

Abstract: A light intensity control device of the present invention includes a light source for outputting a plurality of types of light beams having different wavelengths; a light receiving section for receiving and converting the light beams into an electric signal in accordance with the intensity of the respective light beam; and a polarization separation section provided between the light source and the light receiving section. The plurality of types of light beams include a first light beam and a second light beam having a longer wavelength than that of the first light beam. The polarization separation section guides both a first polarization direction light component of the second light beam and a second polarization direction light component, perpendicular to the first polarization direction, of the second light beam to the light receiving section.

Abstract: An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1; where R1 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; R2 may be the same or different to each other in the unit repeated “n” times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; n is an integer of 5 to 5,000.

Abstract: A silicic coating of 2.4 g/cm3 or higher density, obtained by forming a silicic coating precursor with the use of at least one type of silane compound having a photosensitive functional group and thereafter irradiating the silicic coating precursor with at least one type of light. This silicic coating can be used as a novel barrier film or stopper film for semiconductor device.

Abstract: In a semiconductor substrate of a first conductivity type, first to third drain offset regions of a second conductivity type are formed in that order in a bottom up manner. A body region of the first conductivity type is formed partly in the second drain offset region and partly in the third drain offset region. The second drain offset region has a lower impurity concentration than the first and third drain offset regions. A curvature portion of the body region is located in the second drain offset region.

Abstract: From each server configuring an IT system, process information about a process operating on the server is obtained before a series of processes including a process corresponding to an application for providing an IT service is started in any of the servers. Also, the process information is obtained over a plurality of number of times from start to end of performing the series of processes. Then, from out of the process information during the series of processes, process information corresponding to the process information before the series of processes is started is removed, and then process information while the series of processes including the process corresponding to the application is being performed is specified. From the specified process information, a process name and identification information of a server where the process is performed are extracted, and the extracted process name and identification information are tied together, thereby generating configuration information.

Abstract: The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

Abstract: A semiconductor device of this invention has a copper wiring layer, of which a layer, to which a composition including at least one substance selected from the group consisting of ammonia and organic bases is applied, and a silicon-containing insulating film are sequentially superimposed on the copper wiring layer. Accordingly, semiconductor devices having insulating layers which adheres well to the copper serving as the wiring material can be obtained.

Abstract: A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

Abstract: A light intensity control device of the present invention includes a light source for outputting a plurality of types of light beams having different wavelengths; a light receiving section for receiving and converting the light beams into an electric signal in accordance with the intensity of the respective light beam; and a polarization separation section provided between the light source and the light receiving section. The plurality of types of light beams include a first light beam and a second light beam having a longer wavelength than that of the first light beam. The polarization separation section guides both a first polarization direction light component of the second light beam and a second polarization direction light component, perpendicular to the first polarization direction, of the second light beam to the light receiving section.

Abstract: A brake control device that controls braking forces applied to wheels to stabilize the behavior of a vehicle turning a corner, and includes a turning condition detection unit detecting a turning condition of the vehicle; a braking amount setting unit setting braking amounts for the respective wheels based on the turning condition detected by the turning condition detection unit; a brake control unit applying braking forces to the wheels according to the braking amounts set by the braking amount setting unit; and a road surface friction coefficient estimation unit estimating a road surface friction coefficient of the road on which the vehicle is running. The braking amount setting unit changes upper limits of the braking amounts for the respective wheels according to the road surface friction coefficient when the vehicle is in a center differential lock mode or a direct four-wheel drive mode.

Abstract: According to an aspect of an embodiment, a method of manufacturing a semiconductor device has forming an insulating layer comprising silica-based insulating material, processing the insulating layer, hydrophobizing the insulating layer by applying a silane compound to act on the insulating layer; and irradiating the insulating layer with light or an electron beam.

Abstract: An optical head which has a prism with an incident section, an internal reflective surface and an emergent surface, and an optical head device which employs the optical head. Light emitted from a light source is incident to the prism through the incident section, reflects at least once on the internal reflective surface and is converged in the vicinity of the emergent surface. Then, the light effuses through the emergent surface as near field light.

Abstract: It is an object of the present invention to provide a catalyst having excellent performance and high mechanical strength for use in the production of methacrylic acid. A method for manufacturing a catalyst comprising essential active components of molybdenum, phosphorus, vanadium, cesium, ammonia, copper, and antimony for use in the production of methacrylic acid, comprising drying a slurry prepared by mixing a compound(s) containing the essential active components with water and then calcining the resulting dry powder and molding the calcined powder.