Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Abstract: The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following formula (1). Gd2?(a+x+y+z)LnaLuxCeyLmzSiO5??(1) (In formula (1), Lm represents at least one element selected from among Pr, Tb and Tm, Ln represents at least one element selected from among lanthanoid elements excluding Pr, Tb and Tm, and Sc, and Y, a represents a value of at least 0 and less than 1, x represents a value of greater than 1 and less than 2, y represents a value of greater than 0 and no greater than 0.01, and z represents a value of greater than 0 and no greater than 0.01. The value of a+x+y+z is no greater than 2.

Abstract: A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The concentration of the metal-oxidizing agent is within the range of 0.01 to 3 percent by weight. In the wiring-formation process of the semiconductor device, the conductor used for the barrier layer can be polished at a high polishing rate by using the polishing slurry having the low polishing particle concentration and the low metal anticorrosive agent concentration.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: A polishing slurry comprises a metal-oxidizing agent, a metal anticorrosive agent, an oxidized metal dissolving agent and water. The oxidized metal dissolving agent is at least one kind selected from the group consisting of an acid in which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.5 or more, an ammonium salt of the acid and an organic acid ester of the acid. The pH of the polishing slurry is within the range of 3 to 4. The concentration of the metal-oxidizing agent is within the range of 0.01 to 3 percent by weight. In the wiring-formation process of the semiconductor device, the conductor used for the barrier layer can be polished at a high polishing rate by using the polishing slurry having the low polishing particle concentration and the low metal anticorrosive agent concentration.

Abstract: A single crystal for a scintillator that is a specific single crystal of a cerium-activated orthosilicate compound that comprises 0.00005 to 0.1 wt. %, based on the entire weight of the single crystal, of at least one element selected from a group consisting of elements belonging to Group 13 of the periodic table.

Abstract: This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.

Abstract: A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Abstract: A scintillator single crystal of a specific cerium-doped silicate compound that contains 0.00005 to 0.1 wt % of one or more types of element selected from the group consisting of elements belonging to group 2 of the periodic table based on the total weight of the single crystal.

Abstract: The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2?(x+y)LnxCeySiO5??(1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2?(z+w)LnzCewSiO5??(2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.

Abstract: The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following general formula (1). The scintillator single crystal of the invention exhibits improved scintillation properties by reduced segregation between elements in the crystal ingot. Lm2?(x+y+z)LnxLuyCezSiO5 ??(1) (Wherein Lm represents at least one element selected from among Sc and Y and lanthanoid elements with lower atomic numbers than Lu, Ln represents at least one element selected from among Sc, Y, B, Al, Ga and In and lanthanoid elements with ion radii intermediate between Lm and Lu, x represents a value of greater than zero and no greater than 0.5, y represents a value of greater than 1 and less than 2, and z represents a value of greater than zero and no greater than 0.1.

Abstract: To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

Abstract: The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.