Abstract: A photoelectric conversion device includes first and second photoelectric conversion circuits, a floating diffusion portion, first and second transfer electrodes, and a first control electrode. The second photoelectric conversion circuit has sensitivity lower than that of the first photoelectric conversion circuit. Charges generated in the first photoelectric conversion circuit and the second photoelectric conversion circuit are transferred to the floating diffusion portion. The first transfer electrode is configured to transfer charges from the first photoelectric conversion circuit to the floating diffusion portion. The second transfer electrode is configured to transfer charges from the second photoelectric conversion circuit to the floating diffusion portion.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: A photoelectric conversion apparatus includes a plurality of pixels each including a first photoelectric conversion circuit, a second photoelectric conversion circuit, and a divergence optical circuit for diverging incident light. The divergence optical circuit is disposed on a semiconductor substrate where the first photoelectric conversion circuit and the second photoelectric conversion circuit are disposed, and covers at least a part of the first photoelectric conversion circuit in a plan view as viewed from a light incidence side.

Abstract: A photoelectric conversion apparatus, including: a photoelectric conversion unit that converts received light into charges; and an optical structure that is disposed on the opposite side of a light-receiving surface of the photoelectric conversion unit, wherein the optical structure includes a plurality of first insulating parts and a plurality of second insulating parts, wherein a refractive index of the first insulating part is lower than a refractive index of the second insulating part, wherein at least one of the first insulating part and the second insulating part is disposed at intervals shorter than a wavelength of a detection target light, and wherein an effective refractive index of the optical structure is lowest at a reference point and increases as the distance from the reference point increases, or is highest at the reference point and decreases as the distance from the reference point increases.

Abstract: A photoelectric conversion apparatus, including: a semiconductor substrate having a first surface on which light is incident and a second surface; a photoelectric converting unit configured to convert incident light into charge; a charge holding unit configured to hold charge; a light shielding unit provided in a trench of the semiconductor substrate, the trench being formed between the photoelectric converting unit and the charge holding unit; and a transfer gate formed on a second surface side of the semiconductor substrate so as to overlap with the light shielding unit when viewed in a plan view for the second surface of the semiconductor substrate and configured to transfer the charge at the photoelectric converting unit to the charge holding unit, wherein a distance between the light shielding unit and the photoelectric converting unit is shorter than a distance between the light shielding unit and the charge holding unit.

Abstract: A photodetector device and an optical encoder device that can suppress level variation of a detection signal are provided. A photodetector device of one embodiment includes: a light receiving unit including a plurality of photoelectric conversion elements; a selector circuit that selects a first photoelectric conversion element group and a second photoelectric conversion element group, in the light receiving unit; a differential amplifier that outputs a detection signal in accordance with a difference between a first output signal of the first photoelectric conversion element group and a second output signal of the second photoelectric conversion element group; and a correction unit that corrects the detection signal based on the first output signal and the second output signal.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: Provided is a photoelectric conversion apparatus including a semiconductor layer having a pixel region including a photoelectric conversion unit and a light-shielding member disposed in the pixel region. The semiconductor layer has a main surface and a trench continuous with the main surface, the main surface including a light-receiving surface of the photoelectric conversion unit. The light-shielding member is disposed in the trench. The light-shielding member includes a first section and a second section that is closer to the main surface than the first section. The second section has a width that is greater than the width of the first section. The second section has a height that is greater than the width of the first section.

Abstract: A needle-shaped body protrudes from a cantilever made of Si. Furthermore, the rear face of the cantilever is coated with aluminum (first metal) having a Fermi level higher than that of Si. The cantilever is dipped into an aqueous silver nitride solution containing the ions of Ag serving as a second metal. The electrons of Si flow out to the aqueous silver nitride solution due to the existence of the aluminum, and Ag nanostructures are precipitated at the tip end of the needle-shaped body. A probe for tip-enhanced Raman scattering in which the Ag nanostructures are fixed to the tip end of the needle-shaped body is manufactured. The sizes and shapes of the Ag nanostructures can be controlled properly by adjusting the concentration of the aqueous silver nitride solution and the time during which the cantilever is dipped into the aqueous silver nitride solution.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: A photoelectric conversion apparatus, including: a photoelectric conversion unit that converts received light into charges; and an optical structure that is disposed on the opposite side of a light-receiving surface of the photoelectric conversion unit, wherein the optical structure includes a plurality of first insulating parts and a plurality of second insulating parts, wherein a refractive index of the first insulating part is lower than a refractive index of the second insulating part, wherein at least one of the first insulating part and the second insulating part is disposed at intervals shorter than a wavelength of a detection target light, and wherein an effective refractive index of the optical structure is lowest at a reference point and increases as the distance from the reference point increases, or is highest at the reference point and decreases as the distance from the reference point increases.

Abstract: A photoelectric conversion apparatus, including: a semiconductor substrate having a first surface on which light is incident and a second surface; a photoelectric converting unit configured to convert incident light into charge; a charge holding unit configured to hold charge; a light shielding unit provided in a trench of the semiconductor substrate, the trench being formed between the photoelectric converting unit and the charge holding unit; and a transfer gate formed on a second surface side of the semiconductor substrate so as to overlap with the light shielding unit when viewed in a plan view for the second surface of the semiconductor substrate and configured to transfer the charge at the photoelectric converting unit to the charge holding unit, wherein a distance between the light shielding unit and the photoelectric converting unit is shorter than a distance between the light shielding unit and the charge holding unit.

Abstract: A second resin-impregnated fiber sheet (12) contains fibers extending in a first direction. A third resin-impregnated fiber sheet (13) contains fibers extending in a second direction that is different from the first direction. A first main surface (1a) is provided with a plurality of first linear protruding portions (1a1) extending in the first direction. A second main surface (1b) is provided with a plurality of second linear protruding portions (1b1) extending in the second direction.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: A semiconductor device comprising a plurality of photoelectric conversion elements arrayed on a substrate, a readout unit configured to read out signals from the plurality of photoelectric conversion elements, and a light source unit driver configured to drive a light source unit, wherein the plurality of photoelectric conversion elements include a first element configured to receive incident light and a second element configured to be shielded from the incident light, and the light source unit driver drives the light source based on both a signal from the first element and a signal from the second element read out by the readout unit.

Abstract: A photodetector device and an optical encoder device that can suppress level variation of a detection signal are provided. A photodetector device of one embodiment includes: a light receiving unit including a plurality of photoelectric conversion elements; a selector circuit that selects a first photoelectric conversion element group and a second photoelectric conversion element group, in the light receiving unit; a differential amplifier that outputs a detection signal in accordance with a difference between a first output signal of the first photoelectric conversion element group and a second output signal of the second photoelectric conversion element group; and a correction unit that corrects the detection signal based on the first output signal and the second output signal.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: The present invention relates to a fiber-reinforced sheet having excellent strength. The fiber-reinforced sheet according to the present invention comprises a resin and a fiber bundle, and the fiber-reinforced sheet comprises a resin-unimpregnated fiber bundle portion having a surface not impregnated with the resin or a partially resin-impregnated fiber bundle portion having a surface not impregnated with the resin, has a first surface and a second surface opposite to the first surface, comprises a sheet body portion and at least one ridge portion protruding from the sheet body portion on the first surface, and comprises the resin-unimpregnated fiber bundle portion or the partially resin-impregnated fiber bundle portion at at least one of the first surface and the second surface.

Abstract: A semiconductor device comprising a plurality of photoelectric conversion elements arrayed on a substrate, a readout unit configured to read out signals from the plurality of photoelectric conversion elements, and a light source unit driver configured to drive a light source unit, wherein the plurality of photoelectric conversion elements include a first element configured to receive incident light and a second element configured to be shielded from the incident light, and the light source unit driver drives the light source based on both a signal from the first element and a signal from the second element read out by the readout unit.