Abstract: A high strength steel sheet and a method for manufacturing the same has superior phosphatability properties and hot-dip galvannealed properties besides a tensile strength of 950 MPa or more and a high ductility, and also having a small variation in mechanical properties with the change in annealing conditions.

Abstract: An ultra-high strength steel sheet has a tensile strength of 1400 MPa or higher that can achieve both high strength and good formability and an advantageous method for manufacturing the steel sheet and includes a composition including, on a mass basis C: 0.12% or more and 0.50% or less; Si: 2.0% or less; Mn: 1.0% or more and 5.0% or less; P: 0.1% or less; S: 0.07% or less; Al: 1.0% or less; and N: 0.008% or less, with the balance Fe and incidental impurities. The steel microstructure includes, on an area ratio basis, 80% or more of autotempered martensite, less than 5% of ferrite, 10% or less of bainite, and 5% or less of retained austenite; and the mean number of precipitated iron-based carbide grains each having a size of 5 nm or more and 0.5 ?m or less and included in the autotempered martensite is 5×104 or more per 1 mm2.

Abstract: A high strength steel sheet has a tensile strength of 900 MPa or higher that can achieve both high strength and good formability and a composition including, on a mass basis, C: 0.1% or more and 0.3% or less; Si: 2.0% or less; Mn: 0.5% or more and 3.0% or less; P: 0.1% or less; S: 0.07% or less; Al: 1.0% or less; and N: 0.008% or less, with the balance Fe and incidental impurities. The steel sheet microstructure includes, on an area ratio basis, 5% or more and 80% or less of ferrite, 15% or more of autotempered martensite, 10% or less of bainite, 5% or less of retained austenite, and 40% or less of as-quenched martensite; the mean hardness of the autotempered martensite is HV?700; and the mean number of precipitated iron-based carbide grains each having a size of 5 nm or more and 0.5 ?m or less and included in the autotempered martensite is 5×104 or more per 1 mm2.

Abstract: A laser surveying system, comprising a light source for emitting a laser beam, a projection optical system for turning the laser beam from the light source to a parallel luminous flux, a scanning unit for projecting the luminous flux of the projected laser beam for scanning, a scanning direction detecting unit for detecting a scanning direction, a photodetection optical system for receiving a reflected light of the projected laser beam from an object to be measured, a photodetection element for performing photo-electric conversion of the reflected light received via the photodetection optical system, and a distance measuring unit for measuring a distance based on a signal from the photodetection element, wherein the projection optical system has a luminous flux diameter changing means, and a luminous flux diameter of the projected laser beam is enabled to be changed.

Abstract: The present invention provides a compound represented by the formula: wherein Q represents a fused heterocyclic group, X and Y are the same or different and each represent an optionally halogenated lower alkyl group, an optionally halogenated lower alkoxy group, etc., or a salt thereof, as well as a herbicide comprising the compound or a salt thereof, which exhibits a significant effect for control of sulfonylurea herbicide-resistant weeds in paddy fields and can reduce the number of active ingredients in a combined preparation and a method of controlling sulfonylurea herbicide-resistant weeds which comprises using the same.

Abstract: A method and apparatus is provided for determining an acceptable reticle tolerance for a reticle used to produce an integrated circuit layout. The method begins by specifying a wafer target CD and a wafer CD tolerance for the integrated circuit layout. A reticle target CD is provided for the reticle that is producing the wafer target CD. A critical reticle pattern pitch is selected for the reticle target CD. The critical pattern pitch defines a relationship between the wafer CD and illumination dose exposing the reticle for producing the wafer CD which exhibits a maximum gradient. For the critical reticle pattern pitch, a relationship is established between wafer CD and a deviation from the reticle target CD that arises from use of different illumination doses. From the relationship between wafer CD and the deviation from the reticle target CD, a reticle target CD deviation interval is identified that gives rise to the wafer CD tolerance that is provided.

Abstract: The present invention provides a compound represented by the formula: wherein Q represents a fused heterocyclic group, X and Y are the same or different and each represent an optionally halogenated lower alkyl group, an optionally halogenated lower alkoxy group, etc., or a salt thereof, as well as a herbicide comprising the compound or a salt thereof, which exhibits a significant effect for control of sulfonylurea herbicide-resistant weeds in paddy fields and can reduce the number of active ingredients in a combined preparation and a method of controlling sulfonylurea herbicide-resistant weeds which comprises using the same.

Abstract: A laser surveying system, comprising a light source for emitting a laser beam, a projection optical system for turning the laser beam from the light source to a parallel luminous flux, a scanning unit for projecting the luminous flux of the projected laser beam for scanning, a scanning direction detecting unit for detecting a scanning direction, a photodetection optical system for receiving a reflected light of the projected laser beam from an object to be measured, a photodetection element for performing photo-electric conversion of the reflected light received via the photodetection optical system, and a distance measuring unit for measuring a distance based on a signal from the photodetection element, wherein the projection optical system has a luminous flux diameter changing means, and a luminous flux diameter of the projected laser beam is enabled to be changed.

Abstract: A semiconductor light emitting device (A1) includes a substrate (1) and two electrodes (2A, 2B) formed on the substrate (1). The electrode (2A) is formed with a die bonding pad (2Aa), to which an LED chip (3) is bonded by silver paste (6). The outer edge of the die bonding pad (2Aa) is positioned on the inner side of the outer edge of the LED chip (3) as viewed in the thickness direction of the substrate (1). The electrode (2A) is formed with an extension (21) extending from the die bonding pad (2Aa) to the outside of the LED chip (3).

Abstract: A laser scanner, comprising a mirror rotatably provided, a driving unit for rotating the mirror, a distance measuring unit for projecting a distance measuring light for scanning to a measurement range via the mirror and for obtaining a position data by receiving the reflected distance measuring light via the mirror, a measuring direction observing means for indicating a projecting direction of the distance measuring light, and an operation unit for setting the measurement range by designating at least two measuring directions based on the result of observation of the measuring direction obtained by the measuring direction observing means.

Abstract: This disclosure relates to a high strength cold rolled steel sheet composed of ferrite grains having an average grain diameter of 10 ?m or less, in which the average number per unit area of Nb(C, N) precipitates having a diameter of 50 nm or more is 7.0×10?2/?m2 or less, and a zone having a width of 0.2 to 2.4 ?m and an average area density of NbC precipitates of 60% or less of that of the central portion of the ferrite grains is formed along grain boundaries of the ferrite grains, for example, the steel sheet consisting of 0.004 to 0.02% of C, 1.5% or less of Si, 3% or less of Mn, 0.15% or less of P, 0.02% or less of S, 0.1 to 1.5% of sol.Al, 0.001 to 0.007% of N, 0.03 to 0.2% of Nb, by mass, and the balance of Fe and inevitable impurities. The steel sheet is most preferably used for automobile panel parts since it has the TS of 340 MPa or more and the superior surface strain resistance and press formability.

Abstract: [Problem] To provide an oxygen absorbent that has excellent oxygen absorbability at room temperature, has a low content of metals and is less odorous after oxygen absorption and an oxygen-absorbing multi-layer body comprising an oxygen absorbent layer comprising this oxygen absorbent. [Means for Dissolution] The oxygen absorbent comprises a cyclized product (A) of a conjugated diene polymer and a cyclized product (B) of a conjugated diene polymer, wherein a rate of reduction of unsaturated bonds (%) of the cyclized product (B) of a conjugated diene polymer is at least 5 points smaller than a rate of reduction of unsaturated bonds (%) of the cyclized product (A) of a conjugated diene polymer. It is preferable that the rate of reduction of unsaturated bonds of the cyclized product (A) of a conjugated diene polymer is 60% or more and that the rate of reduction of unsaturated bonds of the cyclized product (B) of a conjugated diene polymer is less than 60%.

Abstract: A mechanism for optimizing insulin infusion rate of a CSII pump for each patient. A continuous subcutaneous insulin infusion therapy uses a continuous subcutaneous insulin pump, which includes: determining a circadian variation curve representing sympathetic nerve activity and that represents parasympathetic nerve activity of a target patient; acquiring an inflection point of each of the circadian variation curves representing the two types of nerve activity; detecting a time that corresponds to the inflection point; and employing the time as a point at which the insulin infusion rate of the continuous subcutaneous insulin infusion pump is changed.

Abstract: A laser scanner, comprising a mirror rotatably provided, a driving unit for rotating the mirror, a distance measuring unit for projecting a distance measuring light for scanning to a measurement range via the mirror and for obtaining a position data by receiving the reflected distance measuring light via the mirror, a measuring direction observing means for indicating a projecting direction of the distance measuring light, and an operation unit for setting the measurement range by designating at least two measuring directions based on the result of observation of the measuring direction obtained by the measuring direction observing means.

Abstract: A wafer test is performed to a wafer, and then a protective film is applied to part of a chip surface of each good chip other than terminals. For defective chips, a protective film is applied to an entire chip surface as well as terminals and, while keeping that state, a burn-in test is performed, thereby cutting off power supply and signal application to defective chips before burn-in test. Moreover, when a chip includes a self-test circuit to judge whether the chip is good or not and the chip is judged to be defective, the function of stopping an internal operation of the chip may be provided or a judgment signal may be transmitted to a burn-in test apparatus, thereby stopping power supply and signal application from the burn-in test apparatus. Thus, power supply and signal application to a chip judged to be defective after burn-in can be cut off.

Abstract: It is important to assess and reduce errors that arise in mask correction techniques such as optical proximity correction. A preliminary mask is obtained using an OPC model. An etched wafer is created from the preliminary mask using lithography, and first and second critical dimensions (CD) are measured on the wafer and. An edge placement error (EPE) is determined that corresponds to a difference between a measured value and a desired value of the second CD. These steps are repeated for a plurality of different values of the first CD, and of for each of the values of, the measured value of the second CD is correlated with its corresponding value on the mask as predicted by the OPC model. ? difference ?CD is obtained between the difference of the mask CDs calculated by interpolation of wafer CD measurements and by OPC model predictions and is transformed into an OPC model error.

Abstract: A method and apparatus is provided for determining an acceptable reticle tolerance for a reticle used to produce an integrated circuit layout. The method begins by specifying a wafer target CD and a wafer CD tolerance for the integrated circuit layout. A reticle target CD is provided for the reticle that is producing the wafer target CD. A critical reticle pattern pitch is selected for the reticle target CD. The critical pattern pitch defines a relationship between the wafer CD and illumination dose exposing the reticle for producing the wafer CD which exhibits a maximum gradient. For the critical reticle pattern pitch, a relationship is established between wafer CD and a deviation from the reticle target CD that arises from use of different illumination doses. From the relationship between wafer CD and the deviation from the reticle target CD, a reticle target CD deviation interval is identified that gives rise to the wafer CD tolerance that is provided.

Abstract: A shaped composite article comprising a substrate and an adherend, which are comprised of different materials and are bonded together through a layer of an adhesive composition comprising as the main ingredient (i) a cyclic structure-containing conjugated diene polymer having a degree of cyclization of 30-95%, or (ii) a modified cyclic structure-containing conjugated diene polymer having a degree of cyclization of 30-95%, and having added thereto 0.1-20 wt. % of an ?,?-ethylenically unsaturated carboxylic acid anhydride, wherein the ratio of {amount of (I)/[amount of (I)+amount of (II)]} is at least 60 wt. %, where (I) is an acid anhydride group added and (II) is a dicarboxylic acid group formed by hydrolysis of an acid anhydride group (I).

Abstract: A galvannealed steel sheet is manufactured by preparing a hot-dip galvanized steel sheet, alloying the steel sheet, and controlling time and temperature for alloying thereof depending on Si and Al contents. The hot-dip galvanized steel sheet contains 0.05 to 0.30% C, 0.01 to 2.0% Si, 0.08 to 3.0% Mn, 0.003 to 0.1% P, 0 to 0.07% S, 0.01 to 2.5% Al, 0 to 0.007% N, by mass, and the balance being Fe and inevitable impurities. Alloying time and temperature are controlled by the formula [Si+Al?1.5×10?7×t0.75×(T?465)3+0.117], where t is the total time (sec) of holding the sheet at 465° C. or more on alloying the coating layer thereon, and T is the average temperature (° C.) of the sheet during the total time t (sec) of holding the steel sheet at 465° C. or more on alloying the coating layer thereon.