Abstract: An etching device uses a gas activated by a plasma for etching semiconductor elements. The apparatus includes etching chamber in which semiconductor elements are horizontally held by a supporting plate or conveyer and etched. The etching gas introduced from the upper side of the semiconductor element to the down side thereof through holes formed in the supporting plate or conveyer.

Abstract: A semiconductor integrated circuit which includes a plurality of island regions surrounded by a bottom dish-like dielectric layer formed on one side of a support body. A transistor element is formed in the island region, and the collector region of the transistor element is formed more adjacent to one surface of the island region than the other regions. The emitter and base electrodes of the transistor element are respectively led out from the bottom side of the island region to the surface of the support body using interior leads. The method for manufacturing the above-described device is also disclosed.

Abstract: A semiconductor device comprises a semiconductor substrate, an insulating layer formed on one surface of the semiconductor substrate, a wiring layer formed on at least a portion of that area of the semiconductor substrate where no insulating layer is formed and having substantially the same thickness as that of the insulating layer, an insulating film formed flat on the insulating layer and wiring layer in a manner that it occupies grooves between the insulating layer and the wiring layer, an intermediate insulating layer formed on the insulating film, and another wiring layer formed on the intermediate insulating layer. The semiconductor device has a rupture-free multi-layer structure which exhibits an excellent electrical property.

Abstract: A continuous gas plasma etching apparatus comprising a reaction chamber having an inlet means and an outlet means, an activation portion disposed at a distance from said reaction chamber, a distributor means for uniformly supplying said reaction chamber with an activated gas produced in said activation proton, an exhaust means for exhausting the gas inside said reaction chamber from a plurality of gas outlets, a conveyer means disposed inside said reaction chamber to transfer workpieces from the inlet means side to the outlet means side in said reaction chamber, a feeding chamber disposed on the inlet means side of said reaction chamber to contain the workpieces, a workpiece feeding means for feeding the workpieces in said feeding chamber from said inlet means to said conveyer means, a first shutter means for opening and shutting said inlet means, a receiving chamber disposed on the outlet means side of said reaction chamber to receive the workpieces treated with said activated gas in said reaction chamber, a

Abstract: A semiconductor integrated circuit includes first and second island regions, surrounded by a bottomed dishlike dielectric layer formed on one side of a support body. A MOS transistor element is formed in the first island region, whose gate region is located at the bottom side of the island region. The gate electrode is connected to a bottom portion of the second island region, which is used as a gate electrode contact region, in the support body using a interconnection lead. There is a method for manufacturing the above device.

Abstract: A semiconductor device comprises a semiconductor substrate, an insulating layer formed on one surface of the semiconductor substrate, a wiring layer formed on at least a portion of that area of the semiconductor substrate where no insulating layer is formed and having substantially the same thickness as that of the insulating layer, an insulating film formed flat on the insulating layer and wiring layer in a manner that it occupies grooves between the insulating layer and the wiring layer, an intermediate insulating layer formed on the insulating film, and another wiring layer formed on the intermediate insulating layer. The semiconductor device has a rupture-free multi-layer structure which exhibits an excellent electrical property.

Abstract: An etching device uses a gas activated by a plasma for etching a semiconductor element. The apparatus includes object feeding and etching chambers formed on the opposite sides of an airtight flat chamber and a support plate rotatably mounted in the flat chamber to bring the semiconductor element from the feeding chamber to the etching chamber in which the semiconductor element is etched by the vertically flowing activated gas.