Abstract: A vehicle air conditioning system includes a refrigerant circuit, a heat medium circuit, a vehicle-interior heat exchanger, a vehicle-exterior heat exchanger including a first heat exchanger and a second heat exchanger disposed in series with respect to a flow of air generated by an air blower, a switching unit, a detection unit for detecting a degree of frost formation, and a control device. The operation mode includes a defrosting mode in which the heat medium in the high-temperature medium circuit is supplied to a defrosting target to be selected as either the first or second heat exchanger by the operation of the switching unit. The control device selects, as the defrosting target, the first heat exchanger in preference to the second heat exchanger when determined that both the first and the second heat exchangers need to be defrosted.

Abstract: A spot size converter includes a first optical waveguide, and a second optical waveguide. The first optical waveguide has a first tapered portion. The first tapered portion extends in a direction in which the first optical waveguide extends, and is thicker with decreasing distance from an end portion of the first optical waveguide and is thinner with decreasing distance from the second optical waveguide. The second optical waveguide is separated from the first tapered portion and has a second tapered portion. The second tapered portion extends in a direction in which the second optical waveguide extends, and is thinner with decreasing distance from the first tapered portion and is thicker with increasing distance from the first tapered portion.

Abstract: A shift-drum apparatus for a gear-type transmission including a plurality of shift forks and a shift drum provided at its outer peripheral surface with a plurality of shift grooves, in which a state of the gear-type transmission is shifted between a neutral state and a plurality of transmission gear stages. The number of shift forks is the same as the number of the transmission gear stages, and each of the shift grooves includes one or more gear-shifting recesses that are depressed in an axial direction of the shift drum. The shift forks are biased in the axial direction respectively by springs toward the corresponding gear-shifting recesses. Two of the gear-shifting recesses are formed in at least one of the shift grooves, while two of the shift forks are engaged with the shift groove.

Abstract: The present invention provides a shift-drum apparatus for a gear-type transmission including a plurality of shift forks and a shift drum provided at its outer peripheral surface with a plurality of shift grooves, in which a state of the gear-type transmission is shifted between a neutral state and a plurality of transmission gear stages. The number of the shift forks is the same as the number of the transmission gear stages, and each of the shift grooves includes one or more gear-shifting recesses that are depressed in an axial direction of the shift drum. The shift forks are biased in the axial direction respectively by springs toward the corresponding gear-shifting recesses. Two of the gear shifting recesses are formed in at least one of the shift grooves, while two of the shift forks are engaged with the shift groove.

Abstract: Including a process for forming a fin 12a having a first height and a fin 12b having a second height lower than the first height, a process for forming a silicon oxide film on the upper and side faces of each of the fins 12a and 12b, a process for forming a conductive poly silicon film on the silicon oxide film, a process for forming a gate insulating film 15 and a gate electrode 16 on from the upper face to the side face of each of the fins 12a and 12b by patterning the silicon oxide film and the poly silicon film, and a process for forming a couple of diffusion regions 14 in two regions clipping a region underneath the gate electrode of each of the fins 12a and 12b. According to the present invention, a semiconductor device manufacturing method and a semiconductor device including a fin-type FET having capability of changing the design of the gate width corresponding to an application can be realized.

Abstract: The present air cleaner includes: a cleaner case having a bottom wall, a circumferential side wall provided with an air inlet in its lower part, and a support wall formed on the bottom wall inside the circumferential side wall; and a cylindrical cleaner element supported on an upper end portion of the support wall. An air chamber is defined by the cleaner case, the support wall, and the cleaner element so as to surround the cleaner element and the support wall. A bottom of the cleaner element is inclined at an angle to the bottom wall of the cleaner case so that a distance between the bottom wall of the cleaner case and the bottom of the cleaner element increases from a side opposite to the air inlet toward an air inlet side.

Abstract: An engine for a vehicle includes a crankcase and a starting system having a starting motor arranged above a top wall of the crankcase and a starting gear train. The crankcase is divided into left and right crankcase members. For example the left crankcase member has a first motor mounting portion protruded upward from a top wall thereof, and having a motor mounting hole. The right crankcase member has a second motor mounting portion on a top wall thereof. One end of the starting motor is fitted in the first motor mounting hole and other end of the starting motor is fastened on the second mounting portion by bolts. The starting gear train includes two or more starting idle shafts.

Abstract: A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.

Abstract: Provided is a semiconductor device manufacturing method by which plasma processing can be performed uniformly on a substrate. A plasma processing apparatus according to one embodiment of the present invention includes an auxiliary electrode provided annularly along a periphery of the lower electrode on a lateral side of the lower electrode. When plasma processing is performed on a substrate S, a potential of the lower electrode is set lower than the potential of the upper electrode while a potential of the auxiliary electrode is set lower than a potential of the upper electrode.

Abstract: A display capable of inhibiting a transistor from an instable operation resulting from fluctuation of the potential of a shielding film and suppressing occurrence of a malfunction is provided. This display comprises a first region including a first transistor, a first shielding film provided on the first region, arranged on a region corresponding to the first transistor and supplied with a first potential, a second region including a second transistor and a second shielding film provided on the second region, arranged on a region corresponding to the second transistor and supplied with a second potential.

Abstract: The present air cleaner for an engine of a vehicle, includes: a cleaner case; and a filter assembly disposed in the cleaner case. The filter assembly includes a cylindrical cleaner element, an element supporting member supporting a lower end of the cleaner element and an inner circumferential surface of the cleaner element so that the cleaner element is kept in a predetermined cylindrical shape, and a plate-shaped top cover detachably fastened on an upper surface of the element supporting member so as to press an upper end of the cleaner element downward.

Abstract: Including a process for forming a fin 12a having a first height and a fin 12b having a second height lower than the first height, a process for forming a silicon oxide film on the upper and side faces of each of the fins 12a and 12b, a process for forming a conductive poly silicon film on the silicon oxide film, a process for forming a gate insulating film 15 and a gate electrode 16 on from the upper face to the side face of each of the fins 12a and 12b by patterning the silicon oxide film and the poly silicon film, and a process for forming a couple of diffusion regions 14 in two regions clipping a region underneath the gate electrode of each of the fins 12a and 12b. According to the present invention, a semiconductor device manufacturing method and a semiconductor device including a fin-type FET having capability of changing the design of the gate width corresponding to an application can be realized.

Abstract: An engine for a vehicle includes a crankcase and a starting system having a starting motor arranged above a top wall of the crankcase and a starting gear train. The crankcase is divided into left and right crankcase members. For example the left crankcase member has a first motor mounting portion protruded upward from a top wall thereof, and having a motor mounting hole. The right crankcase member has a second motor mounting portion on a top wall thereof. One end of the starting motor is fitted in the first motor mounting hole and other end of the starting motor is fastened on the second mounting portion by bolts.

Abstract: A semiconductor memory is fabricated in the following manner. A tungsten plug is formed by burying metal material such as W into a contact hole formed in an inter-layer insulation film. Then, the inter-layer insulation film is etched back by a predetermined thickness so that the upper end portion of the tungsten plug protrudes. The Pt film, a ferroelectric film and another Pt film, which constitute the ferroelectric capacitor, are sequentially formed thereon. The Pt film, ferroelectric film and Pt film are patterned by batch etching, so as to form the ferroelectric capacitor having the ferroelectric film sandwiched by the platinum electrodes.

Abstract: The present air intake device for a straddle-type vehicle, includes: an air cleaner case including an outer wall having an outer surface; and an air intake case of a fixed volume having an open end. The open end is disposed opposite to the outer surface of the outer wall so that a predetermined gap is formed between the open end of the air intake case and the outer surface of the outer wall. Thereby, an air intake chamber is formed in the air intake case and the gap forms an air intake inlet. The air intake chamber communicates with an air inlet of an apparatus mounted on the vehicle.

Abstract: A display capable of inhibiting a transistor from an instable operation resulting from fluctuation of the potential of a shielding film and suppressing occurrence of a malfunction is provided. This display comprises a first region including a first transistor, a first shielding film provided on the first region, arranged on a region corresponding to the first transistor and supplied with a first potential, a second region including a second transistor and a second shielding film provided on the second region, arranged on a region corresponding to the second transistor and supplied with a second potential.

Abstract: A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.

Abstract: A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.

Abstract: The present air intake device for a straddle-type vehicle, includes: an air cleaner case including an outer wall having an outer surface; and an air intake case of a fixed volume having an open end. The open end is disposed opposite to the outer surface of the outer wall so that a predetermined gap is formed between the open end of the air intake case and the outer surface of the outer wall. Thereby, an air intake chamber is formed in the air intake case and the gap forms an air intake inlet. The air intake chamber communicates with an air inlet of an apparatus mounted on the vehicle.

Abstract: The present air cleaner for an engine of a vehicle, includes: a cleaner case; and a filter assembly disposed in the cleaner case. The filter assembly includes a cylindrical cleaner element, an element supporting member supporting a lower end of the cleaner element and an inner circumferential surface of the cleaner element so that the cleaner element is kept in a predetermined cylindrical shape, and a plate-shaped top cover detachably fastened on an upper surface of the element supporting member so as to press an upper end of the cleaner element downward.