Patents by Inventor Yasutoshi Kawaguchi
Yasutoshi Kawaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11629827Abstract: An illumination device includes a first light source that emits first light having a first peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum; a second light source that emits second light having a second peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum, the second light illuminating a position identical to a position illuminated by the first light; and a detection device that detects whether an object is present at a given position, wherein the second peak wavelength is shorter than the first peak wavelength, and a luminous flux of the first light is decreased and a luminous flux of the second light is increased when the detection device detects that the object is present at the predetermined position.Type: GrantFiled: June 21, 2022Date of Patent: April 18, 2023Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Atsuhiro Hori, Kenji Nakashima, Yasutoshi Kawaguchi, Hidemi Takeishi, Masanori Michimori, Shigeo Hayashi
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Publication number: 20220316662Abstract: An illumination device includes a first light source that emits first light having a first peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum; a second light source that emits second light having a second peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum, the second light illuminating a position identical to a position illuminated by the first light; and a detection device that detects whether an object is present at a given position, wherein the second peak wavelength is shorter than the first peak wavelength, and a luminous flux of the first light is decreased and a luminous flux of the second light is increased when the detection device detects that the object is present at the predetermined position.Type: ApplicationFiled: June 21, 2022Publication date: October 6, 2022Inventors: Atsuhiro Hori, Kenji NAKASHIMA, Yasutoshi KAWAGUCHI, Hidemi TAKEISHI, Masanori MICHIMORI, Shigeo HAYASHI
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Publication number: 20160372631Abstract: A light emitting diode includes a GaN substrate having a C-plane as a lamination surface; an n-type GaN layer which is laminated on the GaN substrate and which includes a first n-type GaN layer, an n-type intermediate layer, and a second n-type GaN layer; and an AlGaN strain adjustment layer laminated on the n-type GaN layer. Furthermore, the light emitting diode includes a light-emitting layer which is laminated on the AlGaN strain adjustment layer and which has a multi-quantum well structure having well layers and barrier layers, which are made of InGaN having a lattice constant in an a-axis direction larger than that of the AlGaN strain adjustment layer; and a p-type AlGaN cladding layer laminated on the light emitting layer.Type: ApplicationFiled: August 30, 2016Publication date: December 22, 2016Inventors: YOSHIAKI HASEGAWA, YUSUKE TANJI, TOSHIYA FUKUHISA, MASANORI MICHIMORI, MASAYASU SAIGOU, YASUMITSU KUNOH, MASAHIRO KUME, YASUTOSHI KAWAGUCHI, TAKASHI KANO
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Patent number: 8981340Abstract: A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.Type: GrantFiled: April 4, 2013Date of Patent: March 17, 2015Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Yasutoshi Kawaguchi, Toshitaka Shimamoto, Akihiko Ishibashi, Isao Kidoguchi, Toshiya Yokogawa
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Patent number: 8231726Abstract: An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm?3.Type: GrantFiled: January 19, 2007Date of Patent: July 31, 2012Assignee: Panasonic CorporationInventors: Hisashi Minemoto, Yasuo Kitaoka, Yasutoshi Kawaguchi, Yasuhito Takahashi, Yoshiaki Hasegawa
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Patent number: 8198637Abstract: A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.Type: GrantFiled: October 15, 2007Date of Patent: June 12, 2012Assignee: Panasonic CorporationInventors: Gaku Sugahara, Yasutoshi Kawaguchi, Akihiko Ishibashi, Isao Kidoguchi, Toshiya Yokogawa
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Publication number: 20110272670Abstract: A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.Type: ApplicationFiled: June 16, 2011Publication date: November 10, 2011Inventors: Yasutoshi KAWAGUCHI, Toshitaka SHIMAMOTO, Akihiko ISHIBASHI, Isao KIDOGUCHI, Toshiya YOKOGAWA
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Publication number: 20110182310Abstract: A nitride semiconductor laser diode includes a substrate of n-type GaN, and a multilayer structure including an n-type cladding layer of AlxGa1-xN (where 0<x<1) formed on and in contact with a main surface of the substrate, an MQW active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the MQW active layer. The main surface of the substrate is oriented at an angle ranging from 0.25° to 0.7° with respect to a (0001) plane of a plane orientation. The composition x of the AlxGa1-xN is in a range from 0.025 to 0.04.Type: ApplicationFiled: April 5, 2011Publication date: July 28, 2011Applicant: PANASONIC CORPORATIONInventors: Tomohito Yabushita, Yasutoshi Kawaguchi, Akio Ueta, Akihiko Ishibashi
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Patent number: 7846820Abstract: A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C) of selectively growing AlxGayInzN crystals (0?x, y, z?1: x+y+z=1) 104 on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx?Gay?Inz?N crystal (0?x?, y?, z??1:x?+y?+z?=1) 106 on the AlxGayInzN crystals 104, the Alx?Gay?Inz?N crystal 106 containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals 104 with the Alx?Gay?Inz?N crystal 106 to form one nitride semiconductor layer 120.Type: GrantFiled: April 20, 2005Date of Patent: December 7, 2010Assignee: Panasonic CorporationInventors: Akihiko Ishibashi, Toshiya Yokogawa, Toshitaka Shimamoto, Yoshiaki Hasegawa, Yasutoshi Kawaguchi, Isao Kidoguchi
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Publication number: 20100259184Abstract: A light-emitting device according to the present invention includes a plurality of columnar semiconductors 30 arranged on a GaN substrate 7, and a plurality of protrusions 13 formed on a side face of each columnar semiconductor 30. Each columnar semiconductor 30 has a light-emitting portion composed of a nitride compound semiconductor, and is supported by the GaN substrate 7 at a lower end. The columnar semiconductor 30 has a multilayer structure including an n-cladding layer 9, an active layer 10, and a p-cladding layer 11, the active layer 10 having a multi-quantum well structure in which InWGa1-WN (0<W<1) well layers and GaN barrier layers are alternately deposited.Type: ApplicationFiled: February 15, 2007Publication date: October 14, 2010Inventors: Ryou Kato, Yasutoshi Kawaguchi, Akihiko Ishibashi, Toshiya Yokogawa
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Publication number: 20100230713Abstract: An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm?3.Type: ApplicationFiled: January 19, 2007Publication date: September 16, 2010Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Hisashi Minemoto, Yasuo Kitaoka, Yasutoshi Kawaguchi, Yasuhito Takahashi, Yoshiaki Hasegawa
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Publication number: 20100118905Abstract: A nitride semiconductor laser diode includes a substrate of n-type GaN, and a multilayer structure including an n-type cladding layer of AlxGa1-x N (where 0<x<1) formed on and in contact with a main surface of the substrate, an MQW active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the MQW active layer. The main surface of the substrate is oriented at an angle ranging from 0.25° to 0.7° with respect to a (0001) plane of a plane orientation. The composition x of the AlxGa1-xN is in a range from 0.025 to 0.04.Type: ApplicationFiled: August 26, 2009Publication date: May 13, 2010Inventors: Tomohito YABUSHITA, Yasutoshi Kawaguchi, Akio Ueta, Akihiko Ishibashi
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Patent number: 7704860Abstract: A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ?X of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ?Y of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ?X/?Y>1.0.Type: GrantFiled: November 15, 2005Date of Patent: April 27, 2010Assignee: Panasonic CorporationInventors: Toshitaka Shimamoto, Yasutoshi Kawaguchi, Yoshiaki Hasegawa, Akihiko Ishibashi, Isao Kidoguchi, Toshiya Yokogawa
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Publication number: 20080272462Abstract: A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ?X of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ?Y of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ?X/?Y>1.0.Type: ApplicationFiled: November 15, 2005Publication date: November 6, 2008Inventors: Toshitaka Shimamoto, Yasutoshi Kawaguchi, Yoshiaki Hasegawa, Akihiko Ishibashi, Isao Kidoguchi, Toshiya Yokogawa
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Patent number: 7338827Abstract: A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively spType: GrantFiled: March 9, 2004Date of Patent: March 4, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Gaku Sugahara, Yasutoshi Kawaguchi, Akihiko Ishibashi, Isao Kidoguchi, Toshiya Yokogawa
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Publication number: 20080049806Abstract: A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.Type: ApplicationFiled: October 15, 2007Publication date: February 28, 2008Inventors: Gaku SUGAHARA, Yasutoshi KAWAGUCHI, Akihiko ISHIBASHI, Isao KIDOGUCHI, Toshiya YOKOGAWA
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Publication number: 20070290230Abstract: A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.Type: ApplicationFiled: September 24, 2004Publication date: December 20, 2007Inventors: Yasutoshi Kawaguchi, Toshitaka Shimamoto, Akihiko Ishibashi, Isao Kidoguchi, Toshiya Yokogawa
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Publication number: 20070217460Abstract: A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C) of selectively growing AlxGayInzN crystals (0?x, y, z?1: x+y+z=1) 104 on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx?Gay?Inz?N crystal (0?x?, y?, z??1: x?+y?+z?=1) 106 on the AlxGayInzN crystals 104, the Alx?Gay?Inz?N crystal 106 containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals 104 with the Alx?Gay?Inz?N crystal 106 to form one nitride semiconductor layer 120.Type: ApplicationFiled: April 20, 2005Publication date: September 20, 2007Inventors: Akihiko Ishibashi, Toshiya Yokogawa, Toshitaka Shimamoto, Yoshiaki Hasegawa, Yasutoshi Kawaguchi, Isao Kidoguchi
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Publication number: 20060166478Abstract: A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively spType: ApplicationFiled: March 9, 2004Publication date: July 27, 2006Inventors: Gaku Sugahara, Yasutoshi Kawaguchi, Akihiko Ishibashi, Isao Kidoguchi, Toshiya Yokogawa
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Patent number: 7005680Abstract: The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.Type: GrantFiled: October 7, 2003Date of Patent: February 28, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Nobuyuki Otsuka, Yoshiaki Hasegawa, Gaku Sugahara, Yasutoshi Kawaguchi