Patents by Inventor Yasuyoshi Takai

Yasuyoshi Takai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5360484
    Abstract: An improved microwave plasma CVD apparatus for forming a functional deposited film which is provided with a microwave transmissive window composed of a sintered alpha-alumina ceramics body containing alpha-alumina as a matrix comprised of fine particles with a mean particle size d satisfying the equation 0.5 .mu.m.ltoreq.d.ltoreq.50 .mu.m and with a ratio of .rho..sub.2 /.rho..sub.1 between the theoretical density .rho..sub.1 and the bulk density .rho..sub.2 satisfying the equation 0.800.ltoreq..rho..sub.2 /.rho..sub.1 .ltoreq.0.995.
    Type: Grant
    Filed: May 19, 1993
    Date of Patent: November 1, 1994
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yasuyoshi Takai, Tetsuya Takei, Hirokazu Otoshi, Ryuji Okamura
  • Patent number: 5314780
    Abstract: A method of treating a substrate for an electrophotographic photosensitive member by a process comprises the steps of;a) cutting the surface of the substrate to remove the surface in the desired thickness; andb) bringing the cut surface of the substrate into contact with water having a temperature of from 5.degree. C. to 90.degree. C., having a resistivity of not less than 11 M.OMEGA..multidot.cm at 25.degree. C., containing fine particles with a particle diameter of not smaller than 0.2 .mu.m in a quantity of not more than 10,000 particles per milliliter, containing microorganisms in a total viable cell count of not more than 100 per milliliter and containing an organic matter in a quantity of not more than 10 mg per liter, for at least 10 seconds at a pressure of from 1 kg.multidot.f/cm.sup.2 to 300 kg.multidot.f/cm.sup.2.
    Type: Grant
    Filed: February 26, 1992
    Date of Patent: May 24, 1994
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuya Takei, Hirokazu Ohtoshi, Ryuji Okamura, Hiroyuki Katagiri, Yasuyoshi Takai
  • Patent number: 5284730
    Abstract: An electrophotographic light-receiving member has a surface layer of a non-single crystal material (Si.sub.x C.sub.y O.sub.z).sub.t H.sub.u F.sub.v (wherein 0.1.ltoreq.x.ltoreq.0.4, 0.4.ltoreq.y.ltoreq.0.7, 0.05.ltoreq.z.ltoreq.0.2, x+y+z=1, 0.299.ltoreq.t.ltoreq.0.589, 0.41.ltoreq.u.ltoreq.0.7, 0.001.ltoreq.v.ltoreq.0.1 and t+u+v=1), in which the ratio of silicon atoms bonded to carbon atoms in the surface layer is at least 50% of the total number of silicon atoms, and the ratio of silicon atoms bonded to oxygen atoms is 10 to 30 atomic % of the total number of silicon atoms.
    Type: Grant
    Filed: August 6, 1992
    Date of Patent: February 8, 1994
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuya Takei, Shigeru Shirai, Hirokazu Ohtoshi, Ryuji Okamura, Yasuyoshi Takai, Hiroyuki Katagiri
  • Patent number: 5273851
    Abstract: An electrophotographic light-receiving member comprises a substrate, a photoconductive layer formed on the substrate and composed of a non-single crystal material containing a base component silicon atoms and a surface layer (surface-side region) made of a non-single crystal material containing silicon, carbon and hydrogen atoms, in which the ratio of silicon atoms having at least one bond to a carbon atom in the surface layer is at least 50% of the total number of silicon atoms. The electrophotographic light-receiving member has good initial electrophotographic properties and particularly good durability under a high-humidity environment.
    Type: Grant
    Filed: October 23, 1991
    Date of Patent: December 28, 1993
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuya Takei, Shigeru Shirai, Hirokazu Ootoshi, Ryuji Okamura, Yasuyoshi Takai
  • Patent number: 5232507
    Abstract: An apparatus for forming deposited films with a microwave plasma CVD method comprises a reactor vessel within which the pressure can be reduced, means for supplying a source gas into the reactor vessel, means for introducing the microwave into the reactor vessel and exciting a microwave discharge plasma, and means for holding a plurality of substrates so as to enclose a discharge space formed within the reactor vessel, and is characterized by comprising a holding member holding together dielectric windows for introducing the microwave into the reactor vessel, substrates for the formation of deposited films disposed so as to surround the dielectric windows and a cooling device for cooling the dielectric windows, and conveying means for conveying the holding member into and out of the reactor vessel in a vacuum atmosphere.
    Type: Grant
    Filed: April 30, 1992
    Date of Patent: August 3, 1993
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hirokazu Ohtoshi, Tetsuya Takei, Ryuji Okamura, Yasuyoshi Takai