Abstract: A substrate processing apparatus comprises a processing section having a plurality of process units for applying a series of processes including a resist coating to a processing substrate, a developing process to an exposed substrate, and an etching to the developed processing substrate, a main transferring mechanism, moving along a transferring path, for transferring/receiving the processing substrate to/from the respective process units, and a loading/unloading portion having a transferring/receiving mechanism for transferring/receiving the processing substrate to/from the main transferring apparatus, wherein these process units, the transferring path, and the loading/unloading portion are integrally provided.

Abstract: A plasma etching apparatus of the induction coupling type for processing an LCD substrate has a process container forming an airtight process room. A work table is arranged in the process room for supporting the LCD substrate. A vacuum pump is arranged for exhausting and setting the process room at a vacuum. An antenna block having a plurality of dielectric layers is arranged to face the work table. An RF antenna is embedded in one of the dielectric layers of the antenna block for forming an electric field. A power supply is connected to the RF antenna for applying an RF power. The lowermost layer of the antenna block is formed as a shower head for supplying a process gas into the process room from a position between the RF antenna and the work table. At least part of said process gas is turned into plasma by the electric field.