Patents by Inventor Yat-Lung Chau

Yat-Lung Chau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion assisted deposition process including reactive source gassification
    Patent number: 5415756
    Abstract: A process for depositing a compound of a metal and a reactive gas includes heating a metal target (32), in an evacuated chamber (22) to a predetermined reaction temperature. The reaction temperature is above a critical temperature which is higher than about half the melting point of the metal but below the vaporization temperature of the metal target. At this reaction temperature, the metal target reacts with the reactive gas to produce, in gaseous form, the compound or a sub-compound of the metal and the reactive gas. The gaseous compound or sub-compound is reacted with the reactive gas on a substrate (36) to form a solid layer of the compound on the substrate.
    Type: Grant
    Filed: March 28, 1994
    Date of Patent: May 16, 1995
    Assignee: University of Houston
    Inventors: John C. Wolfe, Wong S. Ho, Darian L. Licon, Yat-Lung Chau