Patents by Inventor Yawara Kaneki

Yawara Kaneki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • P-contact for a Group III-nitride semiconductor device and method of making same
    Patent number: 6239490
    Abstract: A p-contact that comprises a contact layer of a p-type Group III-nitride semiconductor having an exposed surface and an electrode layer of palladium (Pd) located on the exposed surface of the contact layer. The p-contact is made by providing a p-type Group III-nitride semiconductor contact layer having an exposed surface, and depositing an electrode layer of palladium on the exposed surface of the contact layer. Preferably, the p-contact is annealed for a prolonged annealing time after the electrode layer is deposited, and the exposed surface of the contact layer is etched using hydrofluoric acid (HF) before depositing the electrode layer.
    Type: Grant
    Filed: February 9, 1998
    Date of Patent: May 29, 2001
    Assignee: Agilent Technologies, Inc.
    Inventors: Norihide Yamada, Shigeru Nakagawa, Yoshifumi Yamaoka, Tetsuya Takeuchi, Yawara Kaneki