Abstract: A semiconductor device having an embedded semiconductor die and substrate-to-substrate interconnects is disclosed and may include a substrate with a top surface and a bottom surface, a semiconductor die bonded to the top surface of the substrate, a first mold material encapsulating the semiconductor die and at least a portion of the top surface of the substrate, and a first conductive bump that is on the top surface of the substrate and is at least partially encapsulated by the first mold material. An extended substrate may be coupled to the substrate utilizing the first conductive bump. A second conductive bump may be formed on the bottom surface of the substrate, and a second mold material may encapsulate at least a portion of the second conductive bump and at least a portion of the bottom surface of the substrate. A third mold material may be formed between the first mold material and the extended substrate.

Abstract: A semiconductor device having an embedded semiconductor die and substrate-to-substrate interconnects is disclosed and may include a substrate with a top surface and a bottom surface, a semiconductor die bonded to the top surface of the substrate, a first mold material encapsulating the semiconductor die and at least a portion of the top surface of the substrate, and a first conductive bump that is on the top surface of the substrate and is at least partially encapsulated by the first mold material. An extended substrate may be coupled to the substrate utilizing the first conductive bump. A second conductive bump may be formed on the bottom surface of the substrate, and a second mold material may encapsulate at least a portion of the second conductive bump and at least a portion of the bottom surface of the substrate. A third mold material may be formed between the first mold material and the extended substrate.

Abstract: A semiconductor device having an embedded semiconductor die and substrate-to-substrate interconnects is disclosed and may include a substrate with a top surface and a bottom surface, a semiconductor die bonded to the top surface of the substrate, a first mold material encapsulating the semiconductor die and at least a portion of the top surface of the substrate, and a first conductive bump that is on the top surface of the substrate and is at least partially encapsulated by the first mold material. An extended substrate may be coupled to the substrate utilizing the first conductive bump. A second conductive bump may be formed on the bottom surface of the substrate, and a second mold material may encapsulate at least a portion of the second conductive bump and at least a portion of the bottom surface of the substrate. A third mold material may be formed between the first mold material and the extended substrate.

Abstract: A semiconductor device having an embedded semiconductor die and substrate-to-substrate interconnects is disclosed and may include a substrate with a top surface and a bottom surface, a semiconductor die bonded to the top surface of the substrate, a first mold material encapsulating the semiconductor die and at least a portion of the top surface of the substrate, and a first conductive bump that is on the top surface of the substrate and is at least partially encapsulated by the first mold material. An extended substrate may be coupled to the substrate utilizing the first conductive bump. A second conductive bump may be formed on the bottom surface of the substrate, and a second mold material may encapsulate at least a portion of the second conductive bump and at least a portion of the bottom surface of the substrate. A third mold material may be formed between the first mold material and the extended substrate.

Abstract: A semiconductor device having an embedded semiconductor die and substrate-to-substrate interconnects is disclosed and may include a substrate with a top surface and a bottom surface, a semiconductor die bonded to the top surface of the substrate, a first mold material encapsulating the semiconductor die and at least a portion of the top surface of the substrate, and a first conductive bump that is on the top surface of the substrate and is at least partially encapsulated by the first mold material. An extended substrate may be coupled to the substrate utilizing the first conductive bump. A second conductive bump may be formed on the bottom surface of the substrate, and a second mold material may encapsulate at least a portion of the second conductive bump and at least a portion of the bottom surface of the substrate. A third mold material may be formed between the first mold material and the extended substrate.

Abstract: Disclosed are a semiconductor device capable of efficiently radiating heat of a semiconductor die and a method of fabricating the same. The semiconductor device efficiently radiates the heat by preventing an encapsulant from reaching the semiconductor die by an encapsulant dam so that an upper surface of the semiconductor die is exposed out of the encapsulant. In addition, the semiconductor device is configured to expose a pre-solder ball or a conductive pattern of a substrate through a via of the encapsulant. Therefore, electrical connection between the pre-solder ball and a solder ball of another semiconductor device stacked thereon is easily achieved.

Abstract: In accordance with the present invention, there is provided a quad flat no leads (QFN) semiconductor device or package including a leadframe wherein the leads of the leadframe are selectively formed so that portions one or more prescribed leads are exposed in a package body of the semiconductor package and electrically connected to an electromagnetic interference (EMI) shielding layer applied to the package body. In certain embodiments of the present invention, one or more tie bars of the leadframe may also be formed so as to be exposed in the package body of the semiconductor package and electrically connected to the shielding layer applied to the package body. Thus, in the present invention, the shielding layer may be electrically connected to one or more leads alone or in combination with one or more tie bars of the leadframe.

Abstract: In accordance with the present invention, there is provided a quad flat no leads (QFN) semiconductor device or package including a leadframe wherein the leads of the leadframe are selectively formed so that portions one or more prescribed leads are exposed in a package body of the semiconductor package and electrically connected to an electromagnetic interference (EMI) shielding layer applied to the package body. In certain embodiments of the present invention, one or more tie bars of the leadframe may also be formed so as to be exposed in the package body of the semiconductor package and electrically connected to the shielding layer applied to the package body. Thus, in the present invention, the shielding layer may be electrically connected to one or more leads alone or in combination with one or more tie bars of the leadframe.