Abstract: A method includes providing a workpiece to a semiconductor apparatus, the workpiece including a material layer including a first strip having: a first plurality of exposure fields; and a second plurality of exposure fields alternatingly arranged with the first plurality of exposure fields. The method further includes: scanning the first strip along a first scan route from a first side of the workpiece to a second side of the workpiece to generate first topography measurement data; scanning the first strip along a second scan route from the second side to the first side to generate second topography measurement data; and exposing the first plurality of exposure fields and exposing the second plurality of exposure fields according to the first topography measurement data and the second topography measurement data.

Abstract: A method includes: providing a workpiece to a semiconductor apparatus, the workpiece including a material layer, wherein the material layer includes a first strip having a first plurality of exposure fields configured to be exposed in a first direction and a second plurality of exposure fields configured to be exposed in a second direction different from the first direction; scanning the first strip along a first scan route in the first direction to generate first topography measurement data; scanning the first strip along a second scan route in the second direction to generate second topography measurement data; and exposing the first plurality of exposure fields according to the first topography measurement data and exposing the second plurality of exposure fields according to the second topography measurement data.

Abstract: A method includes: providing a workpiece to a semiconductor apparatus, the workpiece including a material layer, wherein the material layer includes a first strip having a first plurality of exposure fields configured to be exposed in a first direction and a second plurality of exposure fields configured to be exposed in a second direction different from the first direction; scanning the first strip along a first scan route in the first direction to generate first topography measurement data; scanning the first strip along a second scan route in the second direction to generate second topography measurement data; and exposing the first plurality of exposure fields according to the first topography measurement data and exposing the second plurality of exposure fields according to the second topography measurement data.

Abstract: A method includes: providing a workpiece to a semiconductor apparatus, the workpiece comprising a material layer, wherein the material layer includes a plurality of areas extending along a first axis; scanning the workpiece in a first direction along the first axis to generate first topography measurement data; scanning the workpiece in a second direction along the first axis to generate second topography measurement data; and performing an exposure operation on the material layer according to the first topography measurement data and the second topography measurement data.