Abstract: A wafer-shipping device and a wafer storage method for protecting bonding pads from fluoridation. First, at least one through hole is drilled in the shipping box. The wafer is then placed in the shipping box. A packaging bag containing the shipping box is put into a vacuum packaging machine to remove air from the packaging bag and the shipping box. A dry inert gas is then introduced into the packaging bag and the shipping box until approaching atmospheric pressure as so to prevent the shipping box from collapse. The packaging bag is then sealed.

Abstract: A method of removing ALF defects on a device after pad etching process, comprising the steps of: (a) applying EKC solution substantially comprising hydroxylamine (HDA) to the device for about 30 min; (b) applying an intermediate rinse chemical, such as Isopropyl alcohol (IPA) or N-methyl pyrrolidone (NMP), to the device for about 0.5 min to 3 min; and (c) applying water to the device. The ALF defects are effectively removed in the method of the invention, and the bad wafers can be turned to the good ones. Consequently, the primary cost during the manufacture is greatly decreased.

Abstract: A wafer-shipping device and a wafer storage method for protecting bonding pads from fluoridation. First, at least one through hole is drilled in the shipping box. The wafer is then placed in the shipping box. A packaging bag containing the shipping box is put into a vacuum packaging machine to remove air from the packaging bag and the shipping box. A dry inert gas is then introduced into the packaging bag and the shipping box until approaching atmospheric pressure as so to prevent the shipping box from collapse. The packaging bag is then sealed.

Abstract: A method of removing sidewall polymer fence of the dielectric layer, which is a wet strip process using acidic SC1 and CR solutions, and SC1 solution is applied before CR solution. SC1 solution substantially comprises ammonium hydroxide, sulfuric acid and water for removing sidewall polymer fence, and CR solution substantially comprises sulfuric acid and hydrogen peroxide for removing photo-resist. The key of the wet strip process of the invention is that SC1 solution is applied at a low temperature for reducing the oxide loss. The wet strip process of the invention can completely remove the sidewall polymer fence and reduce the oxide loss of the dielectric layer.