Patents by Inventor Yen-Ju Lin
Yen-Ju Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240178337Abstract: An optical sensing apparatus includes a first photo-detecting layer having a first absorption region configured to absorb light in at least a visible spectrum; a second photo-detecting layer formed over the first photo-detecting layer, the second photo-detecting layer having a second absorption region configured to absorb light in at least a mid-infrared spectrum; a first buffer layer formed over the second photo-detecting layer; and a second buffer layer formed over the first photo-detecting layer and under the second photo-detecting layer.Type: ApplicationFiled: September 13, 2023Publication date: May 30, 2024Inventors: Yen-Ju Lin, Yun-Chung Na
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Publication number: 20240157469Abstract: The present application provides a method for determining a stability of a welding equipment. The method includes acquiring initial welding images of the welding equipment; obtaining at least one welding spot position of each of at least one welded workpiece in each initial welding image by processing the initial welding images; determining a welding center position of each welded workpiece based on the at least one welding spot position of each welded workpiece, and obtaining welding center positions of all welded workpieces comprised in the initial welding images; and determining a stability of welding equipment based on the welding center positions of all welded workpieces. The method determines whether the welding equipment is stable by analyzing the welding images, thereby improving an accuracy of a detection of a stability of the welding equipment.Type: ApplicationFiled: November 13, 2023Publication date: May 16, 2024Inventors: YEN TSAN, TSUNG-JU LIN, CHEN-TING WU, MING-TAO LUO, JUN-MING HUANG, TAI-YU CHOU, QUAN-XI CHEN
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Publication number: 20240154447Abstract: A power system including a first battery pack, a second battery pack, and a power management circuit is disclosed. The first battery pack has a first end and a second end, and has a first battery capacity. The second battery pack has a third end and a fourth end. The third end is coupled to the second end of the first battery pack and provides a low battery voltage. The fourth end is grounded, the second battery pack has a second battery capacity, and the second battery capacity is greater than the first battery capacity. The power management circuit is coupled to the second battery pack to receive the low battery voltage, and provides a component operating voltage to an electronic components based on the low battery voltage.Type: ApplicationFiled: August 29, 2023Publication date: May 9, 2024Applicant: PEGATRON CORPORATIONInventors: Yi-Hsuan Lee, Liang-Cheng Kuo, Chun-Wei Ko, Ya Ju Cheng, Chih Wei Huang, Ywh Woei Yeh, Yu Cheng Lin, Yen Ting Wang
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Publication number: 20240088561Abstract: An antenna structure is provided. The antenna structure includes a first metal layer and a second metal layer disposed over the first metal layer. The second metal layer forms a first antenna resonating element operating at a first band and has a first opening. The antenna structure also includes a third metal layer disposed over the second metal layer. The third metal layer forms a second antenna resonating element operating at a second band, which is different from the first band. The antenna structure further includes a first transmission line extending from the first metal layer to the second metal layer and a second transmission line extending from the first metal layer through the first opening to the third metal layer.Type: ApplicationFiled: August 29, 2023Publication date: March 14, 2024Inventors: Yen-Ju LIN, Chung-Hsin CHIANG, Wun-Jian LIN, Shih-Huang YEH
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Publication number: 20240087980Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.Type: ApplicationFiled: February 17, 2023Publication date: March 14, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kai-Fang CHENG, Cherng-Shiaw TSAI, Cheng-Chin LEE, Yen-Ju WU, Yen-Pin HSU, Li-Ling SU, Ming-Hsien LIN, Hsiao-Kang CHANG
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Publication number: 20240079787Abstract: An antenna structure includes a radiative antenna element disposed in a first conductive layer and a reference ground plane, disposed in a second conductive layer under the first conductive layer. The radiative antenna element is loaded with a plurality of slots and is electrically connected to the reference ground plane through a plurality of vias, and the vias are placed along a first line of the radiative antenna element and the slots are placed along a second line perpendicular to the first line.Type: ApplicationFiled: August 14, 2023Publication date: March 7, 2024Applicant: MEDIATEK INC.Inventors: Debapratim Dhara, Shih-Chia Chiu, Yen-Ju Lu, Sheng-Mou Lin
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Publication number: 20240079767Abstract: An antenna module is provided. The antenna module includes a dielectric substrate, a radio frequency integrated circuit (RFIC) and a first number of first antennas. The radio frequency integrated circuit (RFIC) is disposed on the dielectric substrate, wherein the RFIC comprises a single first antenna port group and second antenna port groups to receive or transmit signals. The first number of first antennas is arranged in a first row on the dielectric substrate, wherein at least two of the first antennas are connected to the first antenna port group of the RFIC.Type: ApplicationFiled: August 24, 2023Publication date: March 7, 2024Inventors: Yen-Ju LIN, Wun-Jian LIN, Shih-Huang YEH, Nai-Chen LIU
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Publication number: 20240077914Abstract: A foldable electronic device includes a first body having an end and a first inclined surface, a second body having a second inclined surface, and a hinge module. The end includes an accommodating area. A virtual shaft line exists between sides of the first inclined surface and the second inclined surface that are closest to each other. The second body rotates relative to the first body through the virtual shaft line. The hinge module includes a first bracket adjacent to the first inclined surface, connected to the first body, and located in the accommodating area, a second bracket adjacent to the second inclined surface and connected to the second body, and a third bracket including a first end and a second end. The first bracket is connected to the first end through a first torsion assembly. The second bracket is connected to the second end through a second torsion assembly.Type: ApplicationFiled: April 27, 2023Publication date: March 7, 2024Applicant: ASUSTeK COMPUTER INC.Inventors: Chih-Han Chang, Tsung-Ju Chiang, Chi-Hung Lin, Yen-Ting Liu
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Publication number: 20240047886Abstract: An antenna device with a tunable gain, includes a ground plane and a plurality of resonating units. A first resonating unit of the resonating units includes the following elements. A radiating plate, is arranged above the ground plane, and substantially parallel with the ground plane. A ground wall, is arranged between the radiating plate and the ground plane, and substantially perpendicular to the ground plane. A first connecting element, extends along a predefined direction substantially perpendicular to the ground plane. The first connecting element is adapted to couple the radiating plate to the ground plane.Type: ApplicationFiled: July 14, 2023Publication date: February 8, 2024Inventors: Nai-Chen LIU, Chung-Hsin CHIANG, Yen-Ju LIN
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Publication number: 20230228881Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.Type: ApplicationFiled: March 14, 2023Publication date: July 20, 2023Inventors: Szu-Lin Cheng, Chien-Yu Chen, Shu-Lu Chen, Yun-Chung Na, Ming-Jay Yang, Han-Din Liu, Che-Fu Liang, Jung-Chin Chiang, Yen-Cheng Lu, Yen-Ju Lin
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Patent number: 11630212Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.Type: GrantFiled: August 17, 2021Date of Patent: April 18, 2023Assignee: Artilux, Inc.Inventors: Szu-Lin Cheng, Chien-Yu Chen, Shu-Lu Chen, Yun-Chung Na, Ming-Jay Yang, Han-Din Liu, Che-Fu Liang, Jung-Chin Chiang, Yen-Cheng Lu, Yen-Ju Lin
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Publication number: 20220376125Abstract: An optical sensing apparatus is provided. The optical sensing apparatus includes a substrate, one or more pixels supported by the substrate, where each of the one or more pixels includes an absorption region, a field control region, a first contact region, a second contact region and a carrier confining region. The field control region and the first contact region are doped with a dopant of a first conductivity type. The second contact region is doped with a dopant of a second conductivity type. The carrier confining region includes a first barrier region and a channel region, where the first barrier region is doped with a dopant of the second conductivity type and has a first peak doping concentration, and where the channel region is intrinsic or doped with a dopant of the second conductivity type and has a second peak doping concentration lower than the first peak doping concentration.Type: ApplicationFiled: May 12, 2022Publication date: November 24, 2022Inventors: Yun-Chung Na, Chien-Yu Chen, Yen-Ju Lin
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Publication number: 20220262974Abstract: An optical sensing apparatus is provided. The optical sensing apparatus includes a semiconductor substrate composed of a first material; a transmitter-receiver set supported by the semiconductor substrate and including: (1) a photodetector includes an absorption region composed of a second material including germanium and configured to receive an optical signal and to generate photo-carriers in response to the optical signal; and (2) a light source including a light-emitting region composed of a third material including germanium and configured to emit a light toward a target; wherein the absorption region includes at least a property different from a property of the light-emitting region, wherein the property includes strain, conductivity type, peak doping concentration, or a ratio of the peak doping concentration to a peak doping concentration of the semiconductor substrate; wherein the first material is different from the second material and the third material.Type: ApplicationFiled: March 4, 2022Publication date: August 18, 2022Inventors: Yen-Cheng Lu, Yun-Chung Na, Shu-Lu Chen, Yen-Ju Lin
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Publication number: 20220228110Abstract: A method for screening host cells expressing a target protein is provided. The method includes the following steps: providing an expression vector, the expression vector including a promoter, a gene encoding a target protein and an FTH1 gene; transfecting the host cells with the expression vector; culturing the host cells in a medium; and adding iron ions to the medium, and screening the surviving host cells to obtain the host cells expressing the target protein. An expression vector and a method for establishing a cell line stably expressing an exogenous recombinant gene are also provided.Type: ApplicationFiled: December 29, 2021Publication date: July 21, 2022Applicant: Industrial Technology Research InstituteInventors: Yen-Ju LIN, Mei-Wei LIN, Min-Yuan CHOU
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Patent number: 11249017Abstract: Many embodiments provide a high frequency near-field probe based on a tapered waveguide combined with at least one optically-pumped high frequency radiation source and at least one optically-probed high frequency radiation detector.Type: GrantFiled: April 20, 2018Date of Patent: February 15, 2022Assignee: The Regents of the University of CaliforniaInventors: Mona Jarrahi, Yen-Ju Lin
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Publication number: 20210373168Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.Type: ApplicationFiled: August 17, 2021Publication date: December 2, 2021Inventors: Szu-Lin Cheng, Chien-Yu Chen, Shu-Lu Chen, Yun-Chung Na, Ming-Jay Yang, Han-Din Liu, Che-Fu Liang, Jung-Chin Chiang, Yen-Cheng Lu, Yen-Ju Lin
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Patent number: 11105928Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.Type: GrantFiled: June 18, 2020Date of Patent: August 31, 2021Assignee: Artilux, Inc.Inventors: Szu-Lin Cheng, Chien-Yu Chen, Shu-Lu Chen, Yun-Chung Na, Ming-Jay Yang, Han-Din Liu, Che-Fu Liang, Jung-Chin Chiang, Yen-Cheng Lu, Yen-Ju Lin
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Publication number: 20200319345Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.Type: ApplicationFiled: June 18, 2020Publication date: October 8, 2020Inventors: Szu-Lin Cheng, Chien-Yu Chen, Shu-Lu Chen, Yun-Chung Na, Ming-Jay Yang, Han-Din Liu, Che-Fu Liang, Jung-Chin Chiang, Yen-Cheng Lu, Yen-Ju Lin
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Publication number: 20200064259Abstract: Many embodiments provide a high frequency near-field probe based on a tapered waveguide combined with at least one optically-pumped high frequency radiation source and at least one optically-probed high frequency radiation detector.Type: ApplicationFiled: April 20, 2018Publication date: February 27, 2020Applicant: The Regents of the University of CaliforniaInventors: Mona Jarrahi, Yen-Ju Lin
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Patent number: 9777273Abstract: A small interfering RNA is provided. The small interfering RNA consists of a passenger strand and a guide strand, wherein the sequence of the passenger strand comprises the sequence of SEQ ID NO. 7, and the sequence of the guide strand comprises the sequence of SEQ ID NO. 8, wherein the small interfering RNA is capable of inhibiting galectin-12 expression.Type: GrantFiled: August 5, 2015Date of Patent: October 3, 2017Assignees: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, ACADEMIA SINICAInventors: Yen-Ju Lin, Jui-Wen Huang, Fu-Tong Liu, Huan-Yuan Chen, Wei-Chen Hsieh