Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: The disclosure provided an operating method and an electronic device thereof. The electronic device is configured to predict user's next action and automatically launching or starting an application program without user's input. The electronic device detects an occurrence of a clamping action based on sensor data obtained from at least one sensor on one side of the electronic device. Upon detection of a constant pressure through the sensor data, the electronic device executes a first triggering operation (clamping action) and not execute a second triggering operation (squeeze action). Further, a clamping pattern corresponding to the clamping action is identified based on the sensor data outputted by the at least one sensor. Then, the electronic device automatically launches or starts an application program associated to the identified clamping pattern without user's input through a touch display.

Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.

Abstract: The disclosure provided an operating method and an electronic device thereof. The electronic device is configured to predict user's next action and automatically launching or starting an application program without user's input. The electronic device detects an occurrence of a clamping action based on sensor data obtained from at least one sensor on one side of the electronic device. Upon detection of a constant pressure through the sensor data, the electronic device executes a first triggering operation (clamping action) and not execute a second triggering operation (squeeze action). Further, a clamping pattern corresponding to the clamping action is identified based on the sensor data outputted by the at least one sensor. Then, the electronic device automatically launches or starts an application program associated to the identified clamping pattern without user's input through a touch display.

Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.

Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.

Abstract: A manufacturing method for a metal gate includes providing a substrate having a dielectric layer and a polysilicon layer formed thereon, the polysilicon layer, forming a protecting layer on the polysilicon layer, forming a patterned hard mask on the protecting layer, performing a first etching process to etch the protecting layer and the polysilicon layer to form a dummy gate having a first height on the substrate, forming a multilayered dielectric structure covering the patterned hard mask and the dummy gate, removing the dummy gate to form a gate trench on the substrate, and forming a metal gate having a second height in the gate trench. The second height of the metal gate is substantially equal to the first height of the dummy gate.

Abstract: A method for fabricating through-silicon via structure is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a through-silicon via in the semiconductor substrate; covering a liner in the through-silicon via; performing a baking process on the liner; forming a barrier layer on the liner; and forming a through-silicon via electrode in the through-silicon via.

Abstract: The method for processing a metal layer including the following steps is illustrated. First, a semiconductor substrate is provided. Then, a metal layer is formed over the semiconductor substrate. Furthermore, a microwave energy is used to selectively heat the metal layer without affecting the underlying semiconductor substrate and other formed structures, in which the microwave energy has a predetermined frequency in accordance with a material of the metal layer, and the predetermined frequency ranges between 1 KHz to 1 MHz.

Abstract: A manufacturing method for a metal gate includes providing a substrate having a dielectric layer and a polysilicon layer formed thereon, the polysilicon layer, forming a protecting layer on the polysilicon layer, forming a patterned hard mask on the protecting layer, performing a first etching process to etch the protecting layer and the polysilicon layer to form a dummy gate having a first height on the substrate, forming a multilayered dielectric structure covering the patterned hard mask and the dummy gate, removing the dummy gate to form a gate trench on the substrate, and forming a metal gate having a second height in the gate trench. The second height of the metal gate is substantially equal to the first height of the dummy gate.

Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.

Abstract: A method for fabricating through-silicon via structure is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a through-silicon via in the semiconductor substrate; covering a liner in the through-silicon via; performing a baking process on the liner; forming a barrier layer on the liner; and forming a through-silicon via electrode in the through-silicon via.

Abstract: A system for generating webpages. The system comprises a web data generating module, a format template editing module, a content template editing module, and an integration module. The web data generating module generates a format template and a content template according to a preset model, wherein the model comprises at least one page element. The format template editing module adjusts the format template, wherein the format template comprises at least one format element. The content template editing module adjusts the content template, wherein the content template comprises at least one content element. The integration module, connected to the format template adjusting module and the content template adjusting module, retrieves content element from the adjusted content template, combines it into corresponding format element of the adjusted format template, and generates the webpage accordingly.

Abstract: A task object correlation method. First, at least one sub-task object corresponding to a task object is built. The sub-task object has an attribute and a correlation between the task object and the sub-task object is built automatically. Then, the task object and the sub-task object are stored into an object correlation database. When users need to track sub-task objects, a task object is selected and a classification is designated. Then, at least one sub-task object whose attribute conforms to the designated classification is retrieved from the object correlation database according to the task object and the designated classification.

Abstract: An integrated service system. The system includes a setting module, a service database, a matching module, and an execution module. The setting module sets a task flow, and the task flow includes at least one working step and content corresponding to the working step. The service database includes a plurality of services, and each of the services has an attribute. The matching module selects at least one service from the service database if the attribute corresponding to the service conforms to the content corresponding to the working step in the task flow. The execution module executes the working step of the task flow, and dynamically binds the service selected by the matching module to the working step.