Abstract: A semiconductor device having an improved source/drain region profile and a method for forming the same are disclosed. In an embodiment, a method includes etching one or more semiconductor fins to form one or more recesses; and forming a source/drain region in the one ore more recesses, the forming the source/drain region including epitaxially growing a first semiconductor material in the one or more recesses at a temperature of 600° C. to 800° C., the first semiconductor material including doped silicon germanium; and conformally depositing a second semiconductor material over the first semiconductor material at a temperature of 300° C. to 600° C., the second semiconductor material including doped silicon germanium and having a different composition than the first semiconductor material.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure sandwiched between a first electrode and a bottom electrode. A passivation layer overlies the second electrode and the dielectric structure. The passivation layer comprises a horizontal surface vertically below a top surface of the passivation layer. The horizontal surface is disposed above a top surface of the dielectric structure.

Abstract: A method of identifying a flange specification based on an augmented reality interface includes steps of: providing a first interface, through which an operator picks real-time images of a flange at different viewing angles, and creating a virtual flange surface according to the real-time images; providing a second interface, through which the operator picks three circumferential points corresponding to the flange, and creating a virtual flange model having a virtual outer diameter; providing a third interface, through which the operator adjusts a virtual pitch circle diameter of the virtual flange model; providing a fourth interface, through which the operator adjusts a virtual thickness of the virtual flange model; providing a fifth interface, through which the operator inputs a count of bolts; and searching a database according to the virtual outer diameter, the virtual pitch circle diameter and the virtual thickness of the virtual flange model to obtain searched results.

Abstract: A method of identifying a flange specification based on an augmented reality interface includes steps of: providing a first interface, through which an operator picks real-time images of a flange at different viewing angles, and creating a virtual flange surface according to the real-time images; providing a second interface, through which the operator picks three circumferential points corresponding to the flange, and creating a virtual flange model having a virtual outer diameter; providing a third interface, through which the operator adjusts a virtual pitch circle diameter of the virtual flange model; providing a fourth interface, through which the operator adjusts a virtual thickness of the virtual flange model; providing a fifth interface, through which the operator inputs a count of bolts; and searching a database according to the virtual outer diameter, the virtual pitch circle diameter and the virtual thickness of the virtual flange model to obtain searched results.

Abstract: Disclosed is a method for identifying a subject at risk of developing a recurrent or metastatic cancer, comprising detecting PD-L1+ circulating tumor cells in a blood sample, a tissue fluid sample or a specimen of the subject. Also disclosed is method for treating a cancer comprising identifying a subject having one ore more PD-L1+ circulating tumor cells by detecting PD-L1+ circulating tumor cells in a blood sample, a tissue fluid sample or a specimen of the subject, and administering a treatment to the subject.