Abstract: Semiconductor devices and methods of fabrication are described herein. The method includes steps for patterning fins in a multilayer stack and forming an opening in a fin and into a substrate as an initial step in forming a source/drain region. A first semiconductor material is epitaxially grown from channels exposed along sidewalls of the opening to form first source/drain structures. A second semiconductor material is epitaxially grown from the first semiconductor material to form a second source/drain structure over and to fill a space between the first source/drain structures. A bottom of the second source/drain structure is located below a bottommost surface of the first source/drain structures. The second semiconductor material has a greater concentration percentage by volume of germanium than the first semiconductor material. A stack of nanostructures is formed by removing sacrificial layers of the multilayer stack, the second semiconductor material being electrically coupled to the nanostructures.

Abstract: The application relates to a capacitance sensing circuit, which samples and holds a reference signal to generate an input reference signal, hereby, an input signal is generated to a sensing circuit. Thereby, the sensing circuit generates an output signal according to the input signal and a sensing signal, for the capacitance sensing.

Abstract: The application relates to a capacitance sensing circuit, which samples and holds a reference signal to generate an input reference signal, hereby, an input signal is generated to a sensing circuit. Thereby, the sensing circuit generates an output signal according to the input signal and a sensing signal, for the capacitance sensing.

Abstract: An optical device includes a diffusion film including a diffusion film and a condensing film. The diffusion film includes a diffusion layer that exhibits adhesive property and that has a light-incident surface and a light-emitting surface. The light-emitting surface is disposed oppositely of the light-incident surface and having a first microstructure. The condensing film includes a light-transmissive base layer that is adhered onto the light-emitting surface, and a prism layer provided on the light-transmissive base layer opposite to the diffusion film.