Abstract: A method of making a ROM structure includes the operations of forming an active area having a channel, a source region, and a drain region; depositing a gate electrode over the channel; depositing a conductive line over at least one of the source region and the drain region; adding dopants to the source region and the drain region of the active area; forming contacts to the gate electrode, the source region, and the drain; depositing a power rail, a bit line, and at least one word line of the integrated circuit against the contacts; and dividing the active area with a trench isolation structure to electrically isolate the gate electrode from the source region and the drain region.

Abstract: Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a source/drain feature over a substrate, a plurality of semiconductor layers over the substrate, a gate electrode layer surrounding a portion of each of the plurality of the semiconductor layers, a gate dielectric layer in contact with the gate electrode layer, and a cap layer. The cap layer has a first portion disposed between the plurality of semiconductor layers and the source/drain feature and a second portion extending outwardly from opposing ends of the first portion. The semiconductor device structure further includes a dielectric spacer disposed between and in contact with the source/drain feature and the second portion of the cap layer.

Abstract: An integrated circuit includes a first nanostructure transistor and a second nanostructure transistor on a substrate. The source/drain regions of the first nanostructure are electrically isolated from the semiconductor substrate by bottom dielectric regions. The source/drain regions of the second nanostructure transistor in direct contact with the semiconductor substrate.

Abstract: A Fresnel zone plate is provided for encountering incident light having a wavelength. The Fresnel zone plate has a focal length and a wafer including alternating transparent and opaque zones, and a mourning surface. A plurality of silicon nanowires extend into opaque zone of the wafer. A mechanically stretchable tuning structure is mounted to the mounting surface such that stretching of the tuning structure varies the focal length of the Fresnel zone plate.

Abstract: A Fresnel zone plate is provided for encountering incident light having a wavelength. The Fresnel zone plate has a focal length and a wafer including alternating transparent and opaque zones, and a mounting surface. A plurality of silicon nanowires extend into opaque zone of the wafer. A mechanically stretchable turning structure is mounted to the mounting surface such that stretching of the tuning structure varies the focal length of the Fresnel zone plate.