Abstract: In an embodiment, a method includes: immersing a wafer in a bath within a cleaning chamber, removing the wafer out of the bath through a solvent and into a gas within the cleaning chamber, determining a parameter value from the gas; and performing remediation within the cleaning chamber in response to determining that the parameter value is beyond a threshold value.

Abstract: A static random access memory (SRAM) cell includes a four-contact polysilicon pitch (4Cpp) fin field effect transistor (FinFET) architecture including a first bit-cell and a second bit cell. The SRAM cell includes a first bit line and a first complementary bit line, wherein the first bit line and the first complementary bit line are shared by the first and second bit-cells of the SRAM cell. The SRAM cell includes a first word line connected to the first bit cell, and a second word line connected to the second bit cell.

Abstract: A semiconductor package device is provided. The semiconductor package device includes a chip and a redistribution layer disposed on the chip and electrically connected to the chip. The redistribution layer includes a plurality of first metal lines and a plurality of second metal lines, wherein at least one of the second metal lines is disposed between two adjacent first metal lines. The included angle between the at least one of the second metal lines and the two adjacent first metal lines is greater than or equal to 0 degrees and less than or equal to 10 degrees. The first width of one of the two adjacent first metal lines is greater than the second width of the at least one of the second metal lines.

Abstract: One or more computing devices, systems, and/or methods are provided. In an example, a first performance metric score may be determined based upon first content item text. A plurality of similarity scores associated with a plurality of sets of content item text may be determined. One or more sets of content item text may be selected from among the plurality of sets of content item text based upon the plurality of similarity scores and a plurality of performance metric scores associated with the plurality of sets of content item text. The plurality of performance metric scores may comprise one or more performance metric scores associated with the one or more sets of content item text. The one or more performance metric scores may be higher than the first performance metric score. One or more representations of the one or more sets of content item text may be displayed.

Abstract: A system includes a processor and a memory storing software code and a machine learning (ML) model. The software code is executed to receive contextual data samples each including raw data and a descriptive label, for each contextual data sample: search a database for a data pattern matching the raw data, determine, when the data pattern is detected, whether the data pattern is correlated with an anomalous event, and generate, when the correlation is determined, training data including a label identifying the anomalous event, and the raw data, the data pattern, or both, to provide one of multiple training data samples, wherein the training data samples describe anomalous events corresponding respectively to the raw data, the data pattern, or both. The software code is further executed to train the ML model, using the training data samples, to provide a trained predictive ML model configured to predict the anomalous events.

Abstract: A system and a method for workplace safety management are provided. The method includes: dividing a work field corresponding to the workplace into work zones; assigning an environmental indicator to each of the work zones according to environmental data of the workplace; generating AR warning image signals according to the work zones and the environmental indicator; transmitting the AR warning image signals respectively to wearable electronic devices located in the workplace; and each of the wearable electronic devices displaying an AR warning image according to the received AR warning image signal.

Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A device includes a semiconductive fin, an isolation structure, a gate structure, dielectric spacers, and source/drain epitaxial structures. The isolation structure surrounds a bottom portion of the semiconductive fin. The gate structure is over the semiconductive fin. The dielectric spacers are on opposite sides of the semiconductive fin and over the isolation structure. The dielectric spacers include nitride. The source/drain epitaxial structures are on opposite sides of the gate structure and over the dielectric spacers. The source/drain epitaxial structures have hexagon shapes.

Abstract: A 24 GHz band-pass filter includes a step impedance resonator, a first U-shape feeding portion, a second U-shape feeding portion, short-circuit stubs and open-circuit stubs. The step impedance resonator includes a first main portion, a second main portion, and a connection portion for connecting the main portions to each other. The first main portion and the second main portion are electrically connected to a first signal input/output port and a second signal input/output port. The first U-shape feeding portion is electrically connected between the first main portion and the first signal input/output port. The second U-shape feeding portion is electrically connected between the second main portion and the second signal input/output port. The short-circuit stubs are electrically connected to coupling segments of the step impedance resonator. The open-circuit stubs are electrically connected to the first U-shape feeding portion and the second U-shape feeding portion.

Abstract: In an example embodiment, the controller is designed with a single current sensing circuit that is able to measure the current on multiple LED channels, eliminating the need for each LED channel to have its own current sensing circuit. The current sensing circuit may further be utilized with a control unit, which has an LED control model selection multiplexor (MUX) that switches between real-time closed-loop control and open-loop control.

Abstract: Provided are a passivation layer for forming a semiconductor bonding structure, a sputtering target making the same, a semiconductor bonding structure and a semiconductor bonding process. The passivation layer is formed on a bonding substrate by sputtering the sputtering target; the passivation layer and the sputtering target comprise a first metal, a second metal or a combination thereof. The bonding substrate comprises a third metal. Based on a total atom number of the surface of the passivation layer, O content of the surface of the passivation layer is less than 30 at %; the third metal content of the surface of the passivation layer is less than or equal to 10 at %. The passivation layer has a polycrystalline structure. The semiconductor bonding structure sequentially comprises a first bonding substrate, a bonding layer and a second bonding substrate: the bonding layer is mainly formed by the passivation layer and the third metal.

Abstract: A super resolution (SR) image generation circuit includes an image scale-up circuit, a stable SR processing circuit, a generative adversarial network (GAN) processing circuit, and a configurable basic block pool circuit. The image scale-up circuit is arranged to receive and process an input image to generate a scaled-up image. The stable SR processing circuit is arranged to receive a feature map of the input image to generate a stable delta value. The GAN processing circuit is arranged to receive the feature map to generate a GAN delta value. The configurable basic block pool circuit is arranged to dynamically configure a plurality of basic blocks according to a depth requirement of the input image, to generate a configuration result. The SR image generation circuit generates an SR image according to the scaled-up image, the stable delta value, and the GAN delta value.

Abstract: A lighting device includes a light board and a light dimmer circuit. The light board includes multiple first light emitting elements and second light emitting elements. The first light emitting elements are disposed in a first area of the light board. The second light emitting elements are disposed in a second area of the light board. The light dimmer circuit is configured to drive the second light emitting elements to generate flickering lights from the second area of the light board, and is configured to drive the first light emitting elements to generate non-flickering lights from the first area of the light board.

Abstract: A vacuum battery structural assembly and a vacuum multi-cell battery module composed thereof are provided and include a first repeating unit including a first frame plate and a second frame plate with respect to the first frame plate; and an electrolyte channel defined within the first frame plate and the second frame plate to accommodate a liquid electrolyte, wherein both a surface of the first frame plate and a surface of the second frame plate include a vacuum suction area, the vacuum suction area includes a vacuum aperture and a vacuum channel, wherein the vacuum aperture is formed on at least one surface of the first frame plate and the second frame plate, the vacuum channel is positioned inside the first frame plate and the second frame plate, and is configured to generate a longitudinal pressing suction force and seal the first frame plate and the second frame plate.

Abstract: A feature inspection lighting system includes an outer cover having a mounting structure at a first end thereof and defining an outer periphery at a second end thereof. The cover includes an inner surface between the first end and the second end. The inner surface has raised surfaces defined thereon. A plurality of light sources is coupled to the raised surfaces of the inner surface of the cover, and cables to provide electrical power to the light sources is routed between the raised surfaces of the outer cover. The outer periphery of the cover may have a cutout defined therein through which all or part of an object to be inspected can pass.

Abstract: A tape laying device includes a tape transmission mechanism, a compaction head mechanism, a cutter mechanism, a heating mechanism and a motion mechanism. The tape transmission mechanism is configured to transmit the pre-impregnated tape. The compaction head mechanism, connected with the tape transmission mechanism, is configured to depress and drive the pre-impregnated tape transmitted by the tape transmission mechanism to follow a moving path so as to adhere the pre-impregnated tape onto the mould surface. The cutter mechanism is configured to cut the pre-impregnated tape. The heating mechanism, disposed downstream to the cutter mechanism, is configured to heat the pre-impregnated tape. The motion mechanism is used to have the cutter mechanism having an active path to move toward the moving path while the cutter mechanism cuts the pre-impregnated tape.

Abstract: A multi-chip device includes a first material within a substrate. The first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate. A first chip overlies a first portion of the first material and a first portion of the substrate. A second chip overlies a second portion of the first material and a second portion of the substrate. The first material is between the first portion of the substrate and the second portion of the substrate.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: A semiconductor structure includes a buffer layer, a channel layer, a barrier layer, a doped compound semiconductor layer, and a composition gradient layer. The buffer layer is disposed on a substrate, the channel layer is disposed on the buffer layer, the barrier layer is disposed on the channel layer, the doped compound semiconductor layer is disposed on the barrier layer, and the composition gradient layer is disposed between the barrier layer and the doped compound semiconductor layer. The barrier layer and the composition gradient layer include a same group III element and a same group V element, and the atomic percentage of the same group III element in the composition gradient layer is gradually increased in the direction from the barrier layer to the doped compound semiconductor layer. A high electron mobility transistor and a fabrication method thereof are also provided.