Abstract: A method for touchless gesture recognition is provided. The method includes transmitting ultrasonic signals via a speaker. The method includes generating ultrasonic signals. The method includes receiving the reflected ultrasonic signals from an object via two or more microphones. The method includes computing a frequency shift according to the reflected ultrasonic signals. The method includes identifying a gesture that corresponds to a movement of the object according to the frequency shift. The method includes performing a function that corresponds to the gesture.

Abstract: A method for touchless gesture recognition is provided. The method includes transmitting ultrasonic signals via a speaker. The method includes generating ultrasonic signals. The method includes receiving the reflected ultrasonic signals from an object via two or more microphones. The method includes computing a frequency shift according to the reflected ultrasonic signals. The method includes identifying a gesture that corresponds to a movement of the object according to the frequency shift. The method includes performing a function that corresponds to the gesture.

Abstract: A structure is presented as a laminar structure having a first electrode, light-emitting diode epitaxial layer, silver reflecting layer, current barrier layer, metallic buffer layer, bonding layer, substrate and second electrode in turn, the silver reflecting layer covering the light-emitting diode epitaxial layer and having a bare region distributed as a pattern, the bare region being filled with a high temperature enduring reflecting material, the current barrier layer being patterned to be distributed over the silver reflecting layer in correspondence with the bare region, the metallic buffer layer separating the current barrier layer while covering the silver reflecting layer, whereby high temperature generated by the current barrier layer is sustained by the reflecting material to prevent the silver reflecting layer from cracking when being contacted with the high temperature of the current barrier layer and then ensure luminous efficiency of the light-emitting diode.

Abstract: The present invention includes a safety indication structure a high energy invisible light light emitting structure and two potential applying layers. The high energy invisible light light emitting structure includes a high energy invisible light light emitting layer that receives a forward to emit invisible light, and a P-type semiconductor layer and an N-type semiconductor layer respectively disposed at two sides of the high energy invisible light light emitting layer. The two potential applying layers are respectively in contact with the P-type semiconductor layer and the N-type semiconductor layer. The safety indication structure includes a photoluminescent light emitting layer disposed on the high energy invisible light light emitting structure. When the high energy invisible light light emitting structure emits invisible light, the photoluminescent light emitting layer absorbs and converts the invisible light to visible light, which serves as a signal warning for danger to ensure user safety.

Abstract: The present invention includes a safety indication structure a high energy invisible light light emitting structure and two potential applying layers. The high energy invisible light light emitting structure includes a high energy invisible light light emitting layer that receives a forward to emit invisible light, and a P-type semiconductor layer and an N-type semiconductor layer respectively disposed at two sides of the high energy invisible light light emitting layer. The two potential applying layers are respectively in contact with the P-type semiconductor layer and the N-type semiconductor layer. The safety indication structure includes a photoluminescent light emitting layer disposed on the high energy invisible light light emitting structure. When the high energy invisible light light emitting structure emits invisible light, the photoluminescent light emitting layer absorbs and converts the invisible light to visible light, which serves as a signal warning for danger to ensure user safety.

Abstract: An electroluminescent and photoluminescent white light emitting diode (LED) includes an electroluminescent light emitting structure, a first photoluminescent light emitting layer, a second photoluminescent light emitting layer and a red light emitting layer. The electroluminescent light emitting structure emits a violet light having a wavelength between 395 nm and 450 nm and an FWHM smaller than 25 nm. The first photoluminescent light emitting layer and the second photoluminescent light emitting layer are sequentially disposed on the electroluminescent light emitting structure. The first photoluminescent light emitting layer absorbs the violet light to generate a blue light. The second photoluminescent light emitting layer absorbs the violet light and the blue light to generate a green light. The red light emitting layer generates a red light. Accordingly, the violet light, the blue light, the green light and the red light are blended to form a white light having a high color rendering index.

Abstract: A light guide for a linear light source comprising dual light reflecting surfaces, a v-shaped light reflecting surface for maximizing light output and an asymmetrical saw-toothed light reflecting surface for enhancing the uniformity of emitted light is disclosed. The v-shaped light reflecting surface comprises two light reflecting surfaces at 90°. The asymmetrical saw-toothed light reflecting surface comprises notches and ridges with increasing gradient from the light entry end of the light guide to the opposite end. The asymmetrical saw-tooth has a constant pitch and constant saw-tooth angle. The light guide further comprises an apex cut-off surface and a bottom cut-off surface at the light entry end of the light guide to prevent light loss at the light entry point further enhancing the light channeling performance.