Abstract: Provided is a semiconductor device, including gate structures on a substrate, the gate structures extending parallel to a first direction and being spaced apart from each other by a separation trench interposed therebetween, each of the gate structures including insulating patterns stacked on the substrate and a gate electrode interposed therebetween; vertical pillars connected to the substrate through the gate structures; an insulating spacer in the separation trench covering a sidewall of each of the gate structures; and a diffusion barrier structure between the gate electrode and the insulating spacer.

Abstract: Provided are a semiconductor memory device and a fabricating method thereof. The device includes a stack including vertical channel structures that penetrate insulating patterns and gate electrodes that are alternately and repeatedly stacked on each other. Each of the gate electrodes includes first and second gate conductive layers. In a first region between an outer side of the stack and the vertical channel structures, the first gate conductive layer is adjacent to the vertical channel structures and includes a truncated end portion, the second gate conductive layer has a portion adjacent to the vertical channel structures and covered by a corresponding one of the first gate conductive layer and an opposite portion that is not covered with the first gate conductive layer. In a second region between the vertical channel structures, the first gate conductive layer may be extended to continuously cover surfaces of the second gate conductive layer.

Abstract: Methods of manufacturing a three-dimensional semiconductor device are provided. The method includes: forming a thin film structure, where first and second material layers of at least 2n (n is an integer more than 2) are alternately and repeatedly stacked, on a substrate; wherein the first material layer applies a stress in a range of about 0.1×109 dyne/cm2 to about 10×109 dyne/cm2 to the substrate and the second material layer applies a stress in a range of about ?0.1×109 dyne/cm2 to about ?10×109 dyne/cm2 to the substrate.

Abstract: Methods of manufacturing a three-dimensional semiconductor device are provided. The method includes: forming a thin film structure, where first and second material layers of at least 2n (n is an integer more than 2) are alternately and repeatedly stacked, on a substrate; wherein the first material layer applies a stress in a range of about 0.1×109 dyne/cm2 to about 10×109 dyne/cm2 to the substrate and the second material layer applies a stress in a range of about ?0.1×109 dyne/cm2 to about ?10×109 dyne/cm2 to the substrate.