Abstract: Stacked semiconductor dies for semiconductor device assemblies and associated methods and systems are disclosed. In some embodiments, the semiconductor die assembly includes a substrate with a first opening in an inner portion and a second opening in an outer portion of the substrate. Further, the semiconductor die assembly can include a master die attached to a front side of the substrate, where the master die includes a first bond pad proximate to the first opening and a second bond pad proximate to the second opening. The first and second bond pads of the master die can be coupled with first and second substrate bond pads on a back side of the substrate, opposite to the front side, using first and second bonding wires extending through the first and second openings, respectively.

Abstract: A semiconductor package includes a first semiconductor chip, a lower redistribution structure electrically connected to the first semiconductor chip, an upper redistribution structure on the first semiconductor chip, a conductive post electrically connecting the upper redistribution structure to the lower redistribution structure, and a first wire connecting a lower surface of the first semiconductor chip with an upper surface of the lower redistribution structure to dissipate heat of the first semiconductor chip.

Abstract: Semiconductor device assemblies can include a substrate having a substrate contact. The assemblies can include a first semiconductor device and a second semiconductor device arranged in a face-to-face configuration. The assemblies can include a fan-out porch on the substrate at a lateral side of the first semiconductor device and including a wirebond contact, the wirebond contact being electrically coupled to the first semiconductor device. The assemblies can include a wirebond operably coupling the wirebond contact to the substrate contact. The assemblies can include a pillar or bump operably coupling the active side of the first semiconductor device to the active side of the second semiconductor device. In some embodiments, the wirebond contact is operably couple to the active side of the first semiconductor device.

Abstract: A semiconductor package, comprising: a first redistribution structure including a first redistribution via; a first package that is on an upper surface of the first redistribution structure and comprises a first pad; a second redistribution structure that is on a lower surface of the first redistribution structure and comprises a second redistribution via; a second semiconductor chip that is between the first redistribution structure and the second redistribution structure and comprises a connection pad; and a vertical connection structure that is between the first redistribution structure and the second redistribution structure, wherein the vertical connection structure is electrically connected to the first redistribution via and the second redistribution via, the connection pad is electrically connected to the second redistribution via, and the first redistribution via is electrically connected to the first pad.

Abstract: A semiconductor device includes a first chip structure including a wiring structure disposed on a circuit elements, and first bonding metal layers and a first bonding insulating layer on the wiring structure, an upper surface of the first chip structure having an edge region and an inner region surrounded by the edge region, a second chip structure disposed on an inner region of the upper surface of the first chip structure, and including second bonding metal layers respectively bonded to the first bonding metal layers, a second bonding insulating layer bonded to the first bonding insulating layer, and a memory cell layer on the second bonding metal layers and the second bonding insulating layer, an insulating capping layer disposed on an upper surface of the second chip structure and extending to the edge region, and a connection pad disposed on a region of the insulating capping layer.

Abstract: A semiconductor package includes at least one semiconductor module on a substrate. The semiconductor module includes a first semiconductor chip having a first surface and a second surface opposite to the first surface, a second semiconductor chip on the first surface, a plurality of conductive pillars on the first surface, and a redistribution substrate on the second semiconductor chip and the plurality of conductive pillars. The redistribution substrate has a third surface and a fourth surface opposite to the third surface. The third surface of the redistribution substrate faces the first surface of the first semiconductor chip, the plurality of conductive pillars are electrically connected to the first surface of the first semiconductor chip and the third surface of the redistribution substrate, and the fourth surface of the redistribution substrate is electrically connected to the substrate of the semiconductor package.

Abstract: Semiconductor device assemblies with improved ground connections, and associated systems and methods are disclosed. In one embodiment, a semiconductor device assembly may include one or more semiconductor dies mounted on an upper surface of a package substrate. Further, the package substrate includes a bond pad disposed on the upper surface, which may be designated as a ground node for the semiconductor device assembly. The bond pad may be electrically connected to an electromagnetic interference (EMI) shield of the semiconductor device assembly through a conductive component attached to the bond pad and configured to be in contact with the EMI shield at a sidewall surface or a top surface of the semiconductor device assembly, thereby forming the ground connection. Such ground connection may reduce a processing time to form the EMI shield while improving yield and reliability performance of the semiconductor device assemblies.

Abstract: Semiconductor device assemblies can include a substrate having a substrate contact. The assemblies can include a first semiconductor device and a second semiconductor device arranged in a face-to-face configuration. The assemblies can include a fan-out porch on the substrate at a lateral side of the first semiconductor device and including a wirebond contact, the wirebond contact being electrically coupled to the first semiconductor device. The assemblies can include a wirebond operably coupling the wirebond contact to the substrate contact. The assemblies can include a pillar or bump operably coupling the active side of the first semiconductor device to the active side of the second semiconductor device. In some embodiments, the wirebond contact is operably couple to the active side of the first semiconductor device.

Abstract: The present technology is directed to methods of forming semiconductor dies with rabbeted regions. For example, the method can comprise forming a first channel along a street from a backside of the wafer to an intermediate depth between the backside of the wafer and a front side of the wafer. The first channel has a first sloped sidewall and a second sloped sidewall. A second channel is then formed by laser cutting from the intermediate depth in the wafer toward the front side of the wafer along a region between the first and second sidewalls of the first channel. The first sloped sidewall defines a rabbeted region at a side of the first semiconductor dies and the second sloped sidewall defines a rabbeted region at a side of the second semiconductor dies.

Abstract: Disclosed are wafer structures and semiconductor devices. A semiconductor device may include a substrate and a cell array structure on the substrate. The substrate may include a device region and a dummy region surrounding the device region in a plan view. The cell array structure may include a plurality of first dielectric layers, a plurality of gate structures, a vertical channel structure, and a dummy pattern. The vertical channel structure may be on the device region and may penetrate the plurality of gate structures and the plurality of first dielectric layers. The cell array structure includes an outer sidewall above an edge of the substrate and a recessed portion on the outer sidewall of the cell array structure. The dummy pattern may cover a sidewall of the recessed portion and a bottom surface of the recessed portion. The dummy pattern and vertical channel structure may include a same material.

Abstract: This patent application relates to microelectronic device packages with internal EMI shielding, methods of fabricating and related electronic systems. One or more microelectronic devices of a package including multiple microelectronic devices are EMI shielded, and one or more other microelectronic devices of the package are located outside the EMI shielding.

Abstract: A substrate processing apparatus includes a chuck table including a mounting table having a mounting surface on which a substrate is mounted, wherein the mounting surface is a curved surface; and a laser supply head configured to irradiate the substrate attached to the mounting table with a laser beam.

Abstract: A semiconductor package includes a base redistribution layer, a first semiconductor chip on the base redistribution layer, at least two chip stacks stacked on the first semiconductor chip and each including a plurality of second semiconductor chips, a first molding layer covering an upper surface of the first semiconductor chip and surrounding the at least two chip stacks, a third semiconductor chip between the base redistribution layer and the first semiconductor chip, a plurality of connection posts between the base redistribution layer and the first semiconductor chips paced apart from the third semiconductor chip in a horizontal direction, and a second molding layer surrounding the third semiconductor chip and the plurality of connection posts between the base redistribution layer and the first semiconductor chip.

Abstract: Semiconductor device assemblies can include a substrate having a substrate contact. The assemblies can include a first semiconductor device and a second semiconductor device arranged in a face-to-face configuration. The assemblies can include a fan-out porch on the substrate at a lateral side of the first semiconductor device and including a wirebond contact, the wirebond contact being electrically coupled to the first semiconductor device. The assemblies can include a wirebond operably coupling the wirebond contact to the substrate contact. The assemblies can include a pillar or bump operably coupling the active side of the first semiconductor device to the active side of the second semiconductor device. In some embodiments, the wirebond contact is operably couple to the active side of the first semiconductor device.

Abstract: Provided is a semiconductor package, including a lower semiconductor chip, a plurality of semiconductor chips that are disposed on the lower semiconductor chip in a first direction perpendicular to a top surface of the lower semiconductor chip, a plurality of nonconductive layers disposed between the plurality of semiconductor chips, a nonconductive pattern that extends from the nonconductive layers and is disposed on lateral surfaces of at least one of the plurality of semiconductor chips, a first mold layer disposed a top surface of the nonconductive pattern, and a second mold layer disposed a lateral surface of the nonconductive pattern and a lateral surface of the first mold layer, wherein the nonconductive pattern and the first mold layer are disposed between the second mold layer and lateral surfaces of the plurality of semiconductor chips.

Abstract: A semiconductor package includes a semiconductor chip on a substrate. The semiconductor chip includes an active region, and a scribe lane in continuity with an edge of the active region. A non-conductive film (NCF) is between the substrate and the semiconductor chip, the non-conductive film (NCF) at least partially defines a recess region overlapping with the scribe lane in plan view and extending on the active region.

Abstract: Semiconductor device assemblies can include a substrate having a substrate contact. The assemblies can include a first semiconductor device and a second semiconductor device arranged in a face-to-face configuration. The assemblies can include a fan-out porch on the substrate at a lateral side of the first semiconductor device and including a wirebond contact, the wirebond contact being electrically coupled to the first semiconductor device. The assemblies can include a wirebond operably coupling the wirebond contact to the substrate contact. The assemblies can include a pillar or bump operably coupling the active side of the first semiconductor device to the active side of the second semiconductor device. In some embodiments, the wirebond contact is operably couple to the active side of the first semiconductor device.

Abstract: Stacked semiconductor dies for semiconductor device assemblies and associated methods and systems are disclosed. In some embodiments, the semiconductor die assembly includes a substrate with a first opening in an inner portion and a second opening in an outer portion of the substrate. Further, the semiconductor die assembly can include a master die attached to a front side of the substrate, where the master die includes a first bond pad proximate to the first opening and a second bond pad proximate to the second opening. The first and second bond pads of the master die can be coupled with first and second substrate bond pads on a back side of the substrate, opposite to the front side, using first and second bonding wires extending through the first and second openings, respectively.

Abstract: Stacked semiconductor dies for semiconductor device assemblies and associated methods and systems are disclosed. In some embodiments, the semiconductor die assembly includes a substrate with a first opening in an inner portion and a second opening in an outer portion of the substrate. Further, the semiconductor die assembly can include a master die attached to a front side of the substrate, where the master die includes a first bond pad proximate to the first opening and a second bond pad proximate to the second opening. The first and second bond pads of the master die can be coupled with first and second substrate bond pads on a back side of the substrate, opposite to the front side, using first and second bonding wires extending through the first and second openings, respectively.

Abstract: Stacked semiconductor dies for semiconductor device assemblies and associated methods and systems are disclosed. In some embodiments, the semiconductor die assembly includes a substrate with a first opening in an inner portion and a second opening in an outer portion of the substrate. Further, the semiconductor die assembly can include a master die attached to a front side of the substrate, where the master die includes a first bond pad proximate to the first opening and a second bond pad proximate to the second opening. The first and second bond pads of the master die can be coupled with first and second substrate bond pads on a back side of the substrate, opposite to the front side, using first and second bonding wires extending through the first and second openings, respectively.