Abstract: An apparatus for drying and sterilizing kitchen utensils including two door panels with axial compression means at two opposite ends respectively moved in sliding grooves on the apparatus base relative to respective roller means at the sliding grooves, clamps adjustably fastened to tracks on an utensil carrying rack inside the apparatus base for holding down kitchen utensils, supporting tubes connected to stub tubes on the rack for holding containers upside-down for drying and sterilizing, and air conduits with air outlets for guiding hot currents of ozone to the rack and the supporting tubes in all directions.

Abstract: A thin-film disc fabrication method and structure contemplates a sputtered undercoat. An aluminum base is subjected to a fine polishing step, and a relatively thin undercoat is deposited by sputtering. The preferred undercoat is a 0.3-3 micron layer of nickel-vanadium alloy (on the order of 7% vanadium). The preferred recording layer is a sputtered composite structure comprising a layer of chromium and an overlying layer of a cobalt-chromium alloy. Modulation effects can be substantially eliminated by heating the aluminum base prior to sputtering the nickel-vanadium undercoat, and by oxidizing the undercoat prior to deposition of the overlying layers.

Abstract: A bubble domain storage system is described which has the best features of contiguous element bubble propagation systems and bubble lattice file systems. An array of magnetic bubble domains, such as a lattice, is moved along contiguous propagation patterns in response to the reorientation of a magnetic field in the plane of the bubble domain film. Adjacent rows of bubble domains in the array move in opposite directions to provide individual storage loops within the array. Information accessing can be achieved by the use of input/output registers similar to those used in other contiguous disk bubble domain storage systems. For example, the storage system can be a conventional major/minor loop organization using contiguous element propagation patterns for the storage registers and for the input/output registers.

Abstract: A switch for transferring magnetic bubble domains from one propagation path to another using a magnetic charged wall is described. The magnetic charged wall bridges the two propagation paths and causes the domain to strip out along the charged wall. By pulsing an overlying conductor, the charged wall and the associated strip domain will shrink away from one side of the conductor in order to translate the domain to the other side. In contrast with previous transfer gates using current carrying conductors where the magnetic field produced by current through the conductors served as the major bubble translational force, the present switch utilizes a magnetic charged wall as the driving source, the current through the conductor being used only for modification of the charged wall. Therefore, the switching margins are maximized to be substantially the same as the bubble propagation margins and the switching currents required are reduced from those in previously used transfer gates.

Abstract: An improved magnetic bubble domain nucleator is provided which uses a magnetic wall, such as a charged wall, Neel wall, or Bloch wall, to assist nucleation. In a preferred embodiment, a magnetic charged wall is produced in an ion implanted region of a magnetic material with an in-plane magnetic field, and an applied nucleating magnetic field is produced by current in a conductor. The combination of the first magnetic field associated with the charged wall and the second magnetic field produced by current through the conductor is sufficient to nucleate a bubble domain in the magnetic medium whereas each of these fields acting alone is not sufficient for nucleation. Since the first magnetic field provides a component of the total nucleating field, the amount of nucleation current required in the conductor is reduced.

Abstract: A relational data base system utilizing magnetic bubble domain storage. The bubble domain storage is located on a magnetic chip and includes storage circuitry for storing bubble domains in columns and rows. The bubble domains are coded to represent data, and the rows and columns of bubbles correspond to tables of data which are determined by various relations. Current activated transfer gates located on the magnetic chip are used to select a particular row or a particular column of bubble domains for accessing. The magnetic chip also includes a write circuit for writing bubble domains into storage and a read circuit for reading bubble domains removed from storage. Located off the magnetic chip are column addressing circuits, row addressing circuits, interface circuitry, and a computer central processing unit.

Abstract: A lattice file using magnetic bubble domains which are arranged in a regular lattice which is moved or expanded to allow different operations, without requiring the need for bubble domains to be entered into or removed from the lattice. This distinguishes from prior lattice files where new information is entered into the lattice and information to be read is removed from the lattice. In a first embodiment, the inherent stability of the lattice is utilized by providing high density lattice for storage and a relaxed (expanded) lattice for operations such as read and write. Thus, the spacings between the elements in the lattice are changed but their relative positions in the lattice are not changed. In a second embodiment, the lattice is shifted without substantially changing the inter-element spacing and information is written and read from bubble domains magnetostatically coupled to the lattice domains.

Abstract: It has been discovered that magnetic bubble domains can be moved in a magnetic medium without requiring shaped structure along which magnetic poles are created for movement of the domains, and without reliance on magnetic fields established by conductor patterns. If a magnetic field is applied in the plane of the magnetic medium, bubble domains will be stretched in a direction parallel or anti-parallel to the field direction depending on the bubble domain polarity. If this magnetic field has an asymmetry in its amplitude versus time waveform, or if an asymmetry is created by a propagation element, bubble domains can be moved in the magnetic material. This discovery can be used to move bubble domains in a magnetic medium without requiring structure having a particular shape for domain movement, and without requiring conductors. Also, improvements can be made to existing propagation structures to make them more useful.

Abstract: The undulating longitudinal edge of a continuous elongated structure of magnetic material forms a bubble domain propagation path for implementing the continuous movement of magnetic bubble domains under the control of a reorienting in-plane magnetic field. The domains propagate along the periphery of the undulating layer, with the periphery preferably taking the form of linked outwardly convex semi-circles. The structure can be comprised of a magnetically soft material, such as permalloy, or be an implanted region in the magnetic material which supports the bubble domains.

Abstract: The data stored in a coincident block access bubble domain memory with bit-organized chips is encrypted by skewing or permuting selected word bits by predetermined amounts. This is implemented by providing an additional current loop on some or all of the chips which overlies the major loop pattern and has nodes at the similar vector poles of the major loop. The proper energization of selected ones of these additional current loops, under the control of a security key, inhibits or suppresses the advance of the bubble domains in the corresponding major loops for a predetermined number of cycles of the in-plane propagating field, thus skewing the word bits in these chips with respect to the remaining word bits in the unsuppressed chips. Decryption is accomplished by further inhibiting the same major loops for the necessary number of cycles to restore word bit synchronization throughout the memory.

Abstract: A magnetic bubble domain propagation device which is single sided and can be used to move bubble domains in amorphous magnetic films. The propagation structure is comprised of either one or two layers located on a single side of the amorphous magnetic medium. Preferably, the propagation elements in each layer are contiguous to one another to provide maximum density. In a preferred embodiment, the propagation elements are circular, but other geometries can be used. The amorphous magnetic material is deposited over these underlayer propagation elements in order to create a change in the profile of the amorphous material. This change in profile of the amorphous material acts as a restraining barrier to bubble domain movement, so that the bubble domains will move along the proper channel without drifting to other propagation channels, and will move from one propagation element to the next without merely idling at any of the propagation elements.

Abstract: A method of and apparatus for providing single wall self-biased magnetic domains in a film of uniaxial magnetic material. In addition to the conventional uniaxial magnetic film for supporting the single wall domains, a bias film is located adjacent thereto. The material characteristics of the two films and their thicknesses are chosen such that the exchange coupling between the two films provides the effect of an external field for supporting the single wall domains.

Abstract: A method for making a high density magnetic bubble domain system including the functions of read, write, storage, transfer, and annihilation. Only three masking steps are required, of which only one requires critical alignment. The proces makes use of the fact that magnetic disks can be placed on non ion implanted regions without adversely affecting the propagation properties of the implanted regions. Thus, the magnetic disks can be used to define ion implantation masks as well as for providing functions such as generation, propagation, reading, and annihilation. Magnetic elements for generation, storage and propagation, reading and annihilation are deposited in the same non-critical masking step, while all condutors used for writing, reading, and transfer are deposited by a single masking step requiring critical alignment.