Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component is configured to permit the determination of circuit parameters. A high side FET has a gate terminal coupled to an output terminal of a high side gate drive circuit, a drain terminal coupled for receiving an input voltage, and a source terminal coupled to the drain terminal of a low side FET. The gate terminal of the low side FET is coupled to the output terminal of low side drive circuit and the source terminal of the low side FET is coupled for receiving a source of operating potential. The high side gate drive circuit has a bias terminal coupled for receiving a floating potential where the bias terminal is electrically isolated or decoupled from the commonly connected source and drain terminals of the high side FET and the low side FET, respectively.

Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component is configured to permit the determination of circuit parameters. A high side FET has a gate terminal coupled to an output terminal of a high side gate drive circuit, a drain terminal coupled for receiving an input voltage, and a source terminal coupled to the drain terminal of a low side FET. The gate terminal of the low side FET is coupled to the output terminal of low side drive circuit and the source terminal of the low side FET is coupled for receiving a source of operating potential. The high side gate drive circuit has a bias terminal coupled for receiving a floating potential where the bias terminal is electrically isolated or decoupled from the commonly connected source and drain terminals of the high side FET and the low side FET, respectively.

Abstract: In an exemplary embodiment, a packaged device having enhanced thermal dissipation characteristics includes a semiconductor chip having a major current carrying or heat generating electrode. The semiconductor chip is oriented so that the major current carrying electrode faces the top of the package or away from the next level of assembly. The packaged device further includes a conductive clip for coupling the major current carrying electrode to a next level of assembly, and a heat spreader device formed on or integral with the conductive clip. A portion of the heat spreader device may be optionally exposed.

Abstract: In an exemplary embodiment, a packaged device having enhanced thermal dissipation characteristics includes a semiconductor chip having a major current carrying or heat generating electrode. The semiconductor chip is oriented so that the major current carrying electrode faces the top of the package or away from the next level of assembly. The packaged device further includes a conductive clip for coupling the major current carrying electrode to a next level of assembly, and a heat spreader device formed on or integral with the conductive clip. A portion of the heat spreader device may be optionally exposed.

Abstract: A leadframe for a semiconductor package is formed with an indentation on a bottom surface. A side of the indentation is used to form a mold-lock that assists in securing the leadframe to the encapsulation material of the semiconductor package.

Abstract: A method for forming a direct chip attach device (1) includes attaching an electronic chip (3) to a lead frame structure (2), which includes a flag (18). Next, conductive studs (22) are attached to bond pads (13) on electronic chip (3) and flag (18) to form a sub-assembly (24). Sub-assembly (24) is then placed in a molding apparatus (27,47), which includes a first plate (29,49) and second plate (31,51). Second plate (31,51) includes a cavity (32,52) for receiving electronic chip (3) and flag (18), and pins (36,56). During a molding step, pins (36,56) contact conductive studs (22) to prevent encapsulating material (4) from covering studs (22). This forms openings (6) to receive solder balls (9) during a subsequent processing step.

Abstract: A leadframe for a semiconductor package is formed with an indentation on a bottom surface. A side of the indentation is used to form a mold-lock that assists in securing the leadframe to the encapsulation material of the semiconductor package.

Abstract: A method for forming a direct chip attach device (1) includes attaching an electronic chip (3) to a lead frame structure (2), which includes a flag (18). Next, conductive studs (22) are attached to bond pads (13) on electronic chip (3) and flag (18) to form a sub-assembly (24). Sub-assembly (24) is then placed in a molding apparatus (27,47), which includes a first plate (29,49) and second plate (31,51). Second plate (31,51) includes a cavity (32,52) for receiving electronic chip (3) and flag (18), and pins (36,56). During a molding step, pins (36,56) contact conductive studs (22) to prevent encapsulating material (4) from covering studs (22). This forms openings (6) to receive solder balls (9) during a subsequent processing step.