Patents by Inventor Yeurui Chen

Yeurui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method to adjust a kinetics model of surface reactions during plasma processing
    Patent number: 11966203
    Abstract: A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: April 23, 2024
    Assignee: KLA Corporation
    Inventors: Ankur Agarwal, Chad Huard, Yiting Zhang, Haifeng Pu, Xin Li, Premkumar Panneerchelvam, Fiddle Han, Yeurui Chen
  • System and Method to Adjust A Kinetics Model of Surface Reactions During Plasma Processing
    Publication number: 20210055699
    Abstract: A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.
    Type: Application
    Filed: May 12, 2020
    Publication date: February 25, 2021
    Inventors: Ankur A. Agarwal, Chad Huard, Yiting Zhang, Haifeng Pu, Xin Li, Premkumar Panneerchelvam, Fiddle Han, Yeurui Chen