Patents by Inventor Yi-Chan Chen
Yi-Chan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140087487Abstract: A method for repairing a solar cell module includes the following steps. A solar cell module, which is provided, includes a first and a second solar cell serially connected. A first terminal is electrically connected to a first electrode layer of the first solar cell. A second terminal is electrically connected to a second electrode layer of the second solar cell. A polarity of the first electrode layer is the same as that of the second electrode layer. A biased voltage signal is generated and transmitted to the first solar cell and the second solar cell through the first terminal and the second terminal. The biased voltage signal includes a forward biased voltage part greater than zero and a reversed biased voltage part smaller than zero. The voltage value of the reversed biased voltage part is increasingly decreased in a step-like manner as time goes by.Type: ApplicationFiled: November 27, 2013Publication date: March 27, 2014Applicant: Industrial Technology Research InstituteInventors: Chun-Heng Chen, Yi-Chan Chen
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Patent number: 7989795Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.Type: GrantFiled: September 18, 2007Date of Patent: August 2, 2011Assignees: ProMOS Technologies Inc., Nanya Technology Corporation, Winbond Electronics Corp.Inventors: Wei-Su Chen, Yi-Chan Chen, Hong-Hui Hsu, Chien-Min Lee, Der-Sheng Chao, Chih Wei Chen, Ming-Jinn Tsai
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Patent number: 7923286Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.Type: GrantFiled: November 2, 2009Date of Patent: April 12, 2011Assignees: Nanya Technology Corporation, Windbond Electronics Crop.Inventors: Yi-Chan Chen, Wen-Han Wang
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Patent number: 7868631Abstract: A solar cell testing apparatus including a stage, a movable chuck, a light source and a plurality of probes is provided. The movable chuck is disposed on the stage and capable of carrying a sample sheet to move. The sample sheet has a light incident side, a rear side opposite to the light incident side, and a plurality of electrodes disposed on the rear side. The light source is disposed above the stage and capable of providing testing light to the light incident side of the sample sheet. The probes are located on the rear side of the sample sheet and capable of contacting the electrodes of the sample sheet. The present invention not only can be used to test a substrate type solar cell, but also can be used to test a superstrate type solar cell.Type: GrantFiled: March 2, 2009Date of Patent: January 11, 2011Assignee: Industrial Technology Research InstituteInventor: Yi-Chan Chen
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Patent number: 7868314Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.Type: GrantFiled: August 26, 2009Date of Patent: January 11, 2011Assignee: Industrial Technology Research InstituteInventors: Wei-Su Chen, Yi-Chan Chen, Wen-Han Wang, Hong-Hui Hsu, Chien-Min Lee, Yen Chuo, Te-Sheng Chao, Min-Hung Lee
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Patent number: 7835177Abstract: A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.Type: GrantFiled: July 27, 2006Date of Patent: November 16, 2010Assignee: Industrial Technology Research InstituteInventors: Hong-Hui Hsu, Chien-Min Lee, Wen-Han Wang, Min-Hung Lee, Te-Sheng Chao, Yen Chuo, Yi-Chan Chen, Wei-Su Chen
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Publication number: 20100200040Abstract: A device for repairing a solar cell module is described. The solar cell module includes a first solar cell and a second solar cell serially connected to each other. The device for repairing the solar cell module includes a first terminal, a second terminal, and a power supply device. The power supply device applies a biased voltage signal to the solar cells via the first terminal and the second terminal. The biased voltage signal includes a forward biased voltage part and a reversed biased voltage part. The reversed biased voltage part has multiple voltage bands arranged by time, and a voltage value of each voltage band is a fixed value. The voltage value of the earlier-generated voltage band is greater than the voltage value of the later-generated voltage band, and a duration of the reversed biased voltage part is longer than a duration of the forward biased voltage part.Type: ApplicationFiled: May 12, 2009Publication date: August 12, 2010Applicant: Industrial Technology Research InstituteInventors: Chun Heng Chen, Yi Chan Chen
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Publication number: 20100154882Abstract: A solar cell is provided and includes a front contact, a first conductive type layer, an intrinsic (I) layer, a second conductive type layer, and a back contact. The first conductive type layer is a material layer of low refractive index which has a refractive index lower than 3. The material layer with low refractive index was used to increase light transmittance of the solar cell and decrease reflection which occurs at interfaces in the solar cell, and thus the solar cell has an optimum sunlight utility rate. Therefore, the solar cell has a large short circuit current (Jsc) and high efficiency.Type: ApplicationFiled: March 12, 2009Publication date: June 24, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yi-Chan Chen, Hsuan-Yin Fang
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Publication number: 20100140583Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.Type: ApplicationFiled: August 26, 2009Publication date: June 10, 2010Applicant: Industrial Technology Research InstituteInventors: Wei-Su Chen, Yi-Chan Chen, Wen-Han Wang, Hong-Hui Hsu, Chien-Min Lee, Yen Chuo, Te-Sheng Chao, Min-Hung Lee
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Patent number: 7670871Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.Type: GrantFiled: August 6, 2008Date of Patent: March 2, 2010Inventors: Yi-Chan Chen, Wen-Han Wang
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Publication number: 20100047960Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.Type: ApplicationFiled: November 2, 2009Publication date: February 25, 2010Applicant: NANYA TECHNOLOGY CORPORATIONInventors: Yi-Chan Chen, Wen-Han Wang
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Patent number: 7626191Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.Type: GrantFiled: May 17, 2006Date of Patent: December 1, 2009Assignee: Industrial Technology Research InstituteInventors: Te-Sheng Chao, Wen-Han Wang, Min-Hung Lee, Hong-Hui Hsu, Chien-Min Lee, Yen Chuo, Yi-Chan Chen, Wei-Su Chen
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Publication number: 20090278546Abstract: A solar cell testing apparatus including a stage, a movable chuck, a light source and a plurality of probes is provided. The movable chuck is disposed on the stage and capable of carrying a sample sheet to move. The sample sheet has a light incident side, a rear side opposite to the light incident side, and a plurality of electrodes disposed on the rear side. The light source is disposed above the stage and capable of providing testing light to the light incident side of the sample sheet. The probes are located on the rear side of the sample sheet and capable of contacting the electrodes of the sample sheet. The present invention not only can be used to test a substrate type solar cell, but also can be used to test a superstrate type solar cell.Type: ApplicationFiled: March 2, 2009Publication date: November 12, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventor: Yi-Chan Chen
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Patent number: 7598113Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.Type: GrantFiled: June 30, 2006Date of Patent: October 6, 2009Assignee: Industrial Technology Research InstituteInventors: Wei-Su Chen, Yi-Chan Chen, Wen-Han Wang, Hong-Hui Hsu, Chien-Min Lee, Yen Chuo, Te-Sheng Chao, Min-Hung Lee
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Patent number: 7569845Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.Type: GrantFiled: October 24, 2006Date of Patent: August 4, 2009Assignees: Industrial Technology Research Institute, Powerchip Semiconductor Corp., Nanya Technology Corporation, ProMOS Technologies Inc., Winbond Electronics Corp.Inventors: Yi-Chan Chen, Wen-Han Wang
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Patent number: 7545615Abstract: In an LCD source driver, to enhance the ESD performance thereof, there is provided a path in a device area penetrating thereacross such that an internal power wire or an internal ground wire to connect between an output pad and a power-rail ESD clamp circuit on two margins, respectively, of the LCD source driver could pass through the path to shorten the internal power wire or the internal ground wire and thereby to avoid chip area increase for the ESD mechanism.Type: GrantFiled: June 30, 2006Date of Patent: June 9, 2009Assignee: Elan Microelectronics CorporationInventor: Yi-Chan Chen
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Publication number: 20080311699Abstract: A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.Type: ApplicationFiled: August 6, 2008Publication date: December 18, 2008Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSITITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.Inventors: Yi-Chan Chen, Wen-Han Wang
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Publication number: 20080251498Abstract: A method for forming a memory device is disclosed. A dielectric layer is formed on a substrate. A Sn doped phase change layer is formed on the dielectric layer. A patterned mask layer is formed on the Sn doped phase change layer. The Sn doped phase change layer is etched by an etchant comprising fluorine-based etchant added with chlorine using the patterned mask layer as a mask to pattern the Sn doped phase change layer. An electrode is formed, electrically connecting the patterned Sn doped phase change layer.Type: ApplicationFiled: September 7, 2007Publication date: October 16, 2008Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.Inventor: Yi-Chan Chen
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Publication number: 20080237562Abstract: Phase change memory devices and fabrication methods thereof. A phase change memory device comprises a stacked heating element with a conductive portion and a relatively high resistive portion, wherein the relatively high resistive portion includes a nitrogen-containing metal silicide part. The heating stacked element such as a highly resistive nitrogen-containing metal silicide (MSixNy) is formed by a self-aligned silicidizing and nitrifying process. Self-aligned silicidization can be achieved by nitrogen ion implantation or nitrogen-containing plasma treatment. The resistance of the heating element can be regulated by adjusting the content of nitrogen or degree of nitrification.Type: ApplicationFiled: December 12, 2007Publication date: October 2, 2008Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.Inventors: Yi-Chan Chen, Chih-Wei Chen, Hong-Hui Hsu, Chien-Min Lee
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Publication number: 20080164504Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.Type: ApplicationFiled: September 18, 2007Publication date: July 10, 2008Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.Inventors: Wei-Su Chen, Yi-Chan Chen, Hong-Hui Hsu, Chien-Min Lee, Der-Sheng Chao, Chih-Wei Chen, Ming-Jinn Tsai