Abstract: A method of local implicit normalizing flow for arbitrary-scale image super-resolution, an associated apparatus and an associated computer-readable medium are provided. The method applicable to a processing circuit may include: utilizing the processing circuit to run a local implicit normalizing flow framework to start performing arbitrary-scale image super-resolution with a trained model of the local implicit normalizing flow framework according to at least one input image, for generating at least one output image, where a selected scale of the output image with respect to the input image is an arbitrary-scale; and during performing the arbitrary-scale image super-resolution with the trained model, performing prediction processing to obtain multiple super-resolution predictions for different locations of a predetermined space in a situation where a same non-super-resolution input image among the at least one input image is given, in order to generate the at least one output image.

Abstract: A method includes forming a conductive feature through a first dielectric layer, sequentially forming a second dielectric layer and a third dielectric layer over the first dielectric layer, and etching the third dielectric layer to form an opening. A first width of the opening at a top surface of the third dielectric layer is greater than a second width of the opening at a first interface between the third dielectric layer and the second dielectric layer. The method also includes etching the second dielectric layer until the opening extends to the conductive feature, thereby forming an enlarged opening, and forming a metal material in the enlarged opening. A third width of the enlarged opening at the first interface is equal to or less than a fourth width of the enlarged opening at a second interface between the second dielectric layer and the first dielectric layer.

Abstract: An antenna structure includes a ground element, a first radiation element, a second radiation element, a third radiation element, and a nonconductive support element. The first radiation element is coupled to a first grounding point on the ground element. The second radiation element has a feeding point. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled to a second grounding point on the ground element. The third radiation element is adjacent to the second radiation element. The first radiation element, the second radiation element, and the third radiation element are disposed on the nonconductive support element. The second radiation element is at least partially surrounded by the first radiation element. The third radiation element is at least partially surrounded by the second radiation element.

Abstract: In an example embodiment, a deep learning algorithm is introduced that operates on a transition matrix formed from user activities in an online network. The transition matrix records the frequencies that particular transitions between paths of user activity have occurred (e.g., the user performed a login activity, which has one path in the network, and then performed a profile view action, which has another path in the network). Each transition matrix corresponds to a different user's activities.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.

Abstract: Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.

Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Abstract: A ghost key preventing circuit includes plural driving lines, plural sensing lines, plural key switches, plural bias resistors and a controller. The plural driving lines and the plural sensing lines are collaboratively formed as a matrix circuit. The plural key switches are included in the matrix circuit. The plural bias resistors are connected with the corresponding sensing lines. When the key switch of a specified switch circuit is turned on, a divided voltage is generated and outputted from the specified switch circuit. The controller judges whether the key switch of the specified switch circuit is normally turned on or the key switch is a ghost key according to the divided voltage.

Abstract: A semiconductor device includes a semiconductor channel. The semiconductor device includes a metal gate structure disposed over the semiconductor channel. The semiconductor device includes a gate electrode having a bottom surface contacting an upper surface of the metal gate structure. The gate electrode has its side portions extending from its top surface toward the semiconductor fin with a first depth and a central portion extending from its top surface toward the semiconductor fin with a second depth, the first depth being substantially greater than the second depth.

Abstract: A hinge device includes a pivot seat, a rotating shaft, a first friction block, and a locking assembly. By being structurally provided with a sleeve, a first cam ring, a first elastic ring, a second friction block, a second cam ring, a second elastic ring, an elastic element, a locking portion, and a cover of the locking assembly, the hinge device has a locking function and a long service life.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: A multi-board mid-plane includes a disk backplane board (DBB) having a front side and a rear side. Venting holes are provided within the DBB extending between the front side of the DBB and the rear side of the DBB. The multi-board mid-plane also includes a controller backplane board (CBB) having a front side and a rear side. The front side of the CBB includes venting holes provided within the CBB extending between the front side of the CBB and the rear side of the CBB. A top fabric plane board (TFPB) and a bottom fabric plane board (BFPB) are provided for connecting the DBB with the CBB. A combination of the DBB and the CBB has a venting ratio that is equal to a lower of the venting ratio of the DBB and the venting ratio of the CBB.

Abstract: A multi-board mid-plane includes a disk backplane board (DBB) having a front side and a rear side. Venting holes are provided within the DBB extending between the front side of the DBB and the rear side of the DBB. The multi-board mid-plane also includes a controller backplane board (CBB) having a front side and a rear side. The front side of the CBB includes venting holes provided within the CBB extending between the front side of the CBB and the rear side of the CBB. A top fabric plane board (TFPB) and a bottom fabric plane board (BFPB) are provided for connecting the DBB with the CBB. A combination of the DBB and the CBB has a venting ratio that is equal to a lower of the venting ratio of the DBB and the venting ratio of the CBB.

Abstract: A slot-type game and a gaming machine configured to present a slot-type game include a symbol replacement feature. A first set of game symbols is displayed. If a replacement symbol triggering event occurs, such as the appearance of at least one replacement symbol, the symbol replacement is triggered. At least two symbols of the first set of symbols, such as two symbols adjacent to the replacement symbol, are evaluated to determine a highest ranking and a lowest ranking symbol. A second set of symbols is then displayed, the second set of symbols comprising the first set of symbols with occurrences of the lowest ranking symbol replaced with the highest ranking symbol.

Abstract: A slot-type game and a gaming machine configured to present a slot-type game include a symbol replacement feature. A first set of game symbols is displayed. If a replacement symbol triggering event occurs, such as the appearance of at least one replacement symbol, the symbol replacement is triggered. At least two symbols of the first set of symbols, such as two symbols adjacent to the replacement symbol, are evaluated to determine a highest ranking and a lowest ranking symbol. A second set of symbols is then displayed, the second set of symbols comprising the first set of symbols with occurrences of the lowest ranking symbol replaced with the highest ranking symbol.

Abstract: A slot-type game and a gaming machine configured to present a slot-type game include a symbol replacement feature. A first set of game symbols is displayed. If a replacement symbol triggering event occurs, such as the appearance of at least one replacement symbol, the symbol replacement is triggered. At least two symbols of the first set of symbols, such as two symbols adjacent to the replacement symbol, are evaluated to determine a highest ranking and a lowest ranking symbol. A second set of symbols is then displayed, the second set of symbols comprising the first set of symbols with occurrences of the lowest ranking symbol replaced with the highest ranking symbol.

Abstract: Methods, systems, and devices for adapting a Class II game to provide play characteristics of a Class III game are provided. Plays of the Class III game are simulated in a computer to obtain frequencies of occurrence of at least one Class III award. Plays of the Class II game are simulated in a computer to obtain frequencies of occurrence of at least one Class II outcome. A Class III award is selected. A Class II outcome having a similar frequency of occurrence to the selected Class III award is selected. An award is defined for the selected Class II outcome according to the selected Class III award.

Abstract: Methods, systems, and devices for adapting a Class II game to provide play characteristics of a Class III game are provided. Plays of the Class III game are simulated in a computer to obtain frequencies of occurrence of at least one Class III award. Plays of the Class II game are simulated in a computer to obtain frequencies of occurrence of at least one Class II outcome. A Class III award is selected. A Class II outcome having a similar frequency of occurrence to the selected Class III award is selected. An award is defined for the selected Class II outcome according to the selected Class III award.

Abstract: Methods, systems, and devices for adapting a Class II game to provide play characteristics of a Class III game are provided. Plays of the Class III game are simulated in a computer to obtain frequencies of occurrence of at least one Class III award. Plays of the Class II game are simulated in a computer to obtain frequencies of occurrence of at least one Class II outcome. A Class III award is selected. A Class II outcome having a similar frequency of occurrence to the selected Class III award is selected. An award is defined for the selected Class II outcome according to the selected Class III award.

Abstract: Methods, systems, and devices for adapting a Class II game to provide play characteristics of a Class III game are provided. Plays of the Class III game are simulated in a computer to obtain frequencies of occurrence of at least one Class III award. Plays of the Class II game are simulated in a computer to obtain frequencies of occurrence of at least one Class II outcome. A Class III award is selected. A Class II outcome having a similar frequency of occurrence to the selected Class III award is selected. An award is defined for the selected Class II outcome according to the selected Class III award.