Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. The first conductive via structure has a first substantially strip shape in a top view of the first conductive via structure.

Abstract: A method includes forming a conductive feature through a first dielectric layer, sequentially forming a second dielectric layer and a third dielectric layer over the first dielectric layer, and etching the third dielectric layer to form an opening. A first width of the opening at a top surface of the third dielectric layer is greater than a second width of the opening at a first interface between the third dielectric layer and the second dielectric layer. The method also includes etching the second dielectric layer until the opening extends to the conductive feature, thereby forming an enlarged opening, and forming a metal material in the enlarged opening. A third width of the enlarged opening at the first interface is equal to or less than a fourth width of the enlarged opening at a second interface between the second dielectric layer and the first dielectric layer.

Abstract: Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.

Abstract: Embodiments include a contact structure and method of forming the same where the contact structure is deliberately positioned near the end of a metallic line. An opening is formed in an insulating structure positioned over the metallic line and then the opening is extended into the metallic line by an etching process. In the etching process, the line end forces etchant to concentrate back away from the line end, causing lateral etching of the extended opening. A subsequent contact is formed in the opening and enlarged opening.

Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Abstract: A semiconductor device includes a channel structure, a first gate structure straddling the channel structure, and an epitaxial structure. The epitaxial structure is adjacent to the first gate structure and is coupled to an end of the channel structure. The semiconductor device further includes a first contact structure disposed over and in contact with the epitaxial structure and a nitride-based conformal layer extending at least over the first contact structure. The semiconductor device further includes an oxide-based layer disposed over the nitride-based conformal layer. A portion of the nitride-based conformal layer, disposed over the first contact structure, has a dip that is filled with a first portion of the oxide-based layer.

Abstract: A method includes removing a dummy gate stack to form a first trench between gate spacers, forming a replacement gate stack in the first trench, recessing the replacement gate stack to form a second trench between the gate spacers, selectively depositing a conductive capping layer in the second trench, forming a dielectric hard mask in the second trench and over the conductive capping layer, and etching the dielectric hard mask using an etching gas to form an opening in the dielectric hard mask. The replacement gate stack is revealed to the opening. The conductive capping layer is more resistant to the etching gas than the replacement gate stack. The method further comprises forming a gate contact plug over and contacting the conductive capping layer.

Abstract: A sound isolation window includes a frame and a plurality of sound blocking bars. The frame has an upper frame portion and a lower frame portion. The frame further has a first sidewall and a second sidewall connected to the upper and lower frame portion. The upper frame portion, the lower frame portion, the first sidewall and the second sidewall form a first opening and an opposite second opening. Each sound blocking bar includes a plane perpendicular to the upper frame portion and the lower frame. The sound blocking bars are arranged along the first direction from the first opening to the second opening and spaced apart from each other. Projections along the first direction of the sound blocking bars over the first opening cover the first opening. The width of each sound blocking bar is less than one-half of the width of the first opening.

Abstract: A method for detecting the presence and the correct or incorrect placement of target objects in a container or carrier divides the container space into areas where the states of placement of the target objects in the container can be recognized, to generate N number of sub-areas, N is a positive integer. An artificial intelligence model is obtained by training the same according to training images of objects, the training images being images of the N sub-areas. The images are input into the artificial intelligence model and the states of placement are determined. The disclosure also provides an electronic device and a non-transitory storage medium.

Abstract: A medical device configured to move an introducer into a passageway or tissue without the conventional use of an obturator or dilator while concurrently affording visual control over the movement of a distal end of the introducer in the passageway or tissue.

Abstract: A method comprises forming a gate structure over a semiconductor substrate; forming an etch stop layer over the gate structure and an ILD layer over the etch stop layer; performing a first etching process to form a gate contact opening extending through the ILD layer into the etch stop layer, resulting in a sidewall of the etch stop layer being exposed in the gate contact opening; oxidizing the exposed sidewall of the etch stop layer; after oxidizing the exposed sidewall of the etch stop layer, performing a second etching process to deepen the gate contact opening; and forming a gate contact in the deepened gate contact opening.

Abstract: A method comprises forming a source/drain contact over a source/drain region; forming an etch stop layer over the source/drain contact and an interlayer dielectric (ILD) layer over the etch stop layer; performing a first etching process to form a via opening extending though the ILD layer and a recess in the etch stop layer; oxidizing a sidewall of the recess in the etch stop layer; after oxidizing the sidewall of the recess in the etch stop layer, performing a second etching process to extend the via opening down to the source/drain contact; and after performing the second etching process, forming a source/drain via in the via opening.

Abstract: A sound isolation window includes a frame and a plurality of sound blocking bars. The frame has an upper frame portion and a lower frame portion. The frame further has a first sidewall and a second sidewall connected to the upper and lower frame portion. The upper frame portion, the lower frame portion, the first sidewall and the second sidewall form a first opening and an opposite second opening. Each sound blocking bar includes a plane perpendicular to the upper frame portion and the lower frame. The sound blocking bars are arranged along the first direction from the first opening to the second opening and spaced apart from each other. Projections along the first direction of the sound blocking bars over the first opening cover the first opening. The width of each sound blocking bar is less than one-half of the width of the first opening.

Abstract: The present invention provides a keyboard device, including a plurality of key structures, where each key structure includes a thin-film circuit board, a key frame, an elastic element and a press assembly. The key frame is arranged on the thin-film circuit board, and includes a frame body and a bottom plate that are of an integrally formed structure. The bottom plate is located between the frame body and the thin-film circuit board, and has a through hole, and the thin-film circuit board covers the through hole. The elastic element is arranged on the thin-film circuit board, and a part of the elastic element is located in the through hole in the bottom plate. The press assembly is arranged in the key frame, and the elastic element is located between the press assembly and the thin-film circuit board. The present invention further provides a keyboard device assembly method.

Abstract: The semiconductor structure includes a semiconductor device, a first metallization layer on the semiconductor device, a second metallization layer on the first metallization layer, and a third dielectric layer between the first metallization layer and the second metallization layer. The first metallization layer includes a first dielectric layer and a first metal layer disposed in the first dielectric layer, wherein the first metal layer has a first thickness, and the first metal layer comprises copper. The third dielectric layer has a second thickness, and a ratio of the second thickness of the third dielectric layer to the first thickness of the first metal layer is ranged from about 3 to about 20.

Abstract: The semiconductor structure includes a semiconductor device, a first metallization layer on the semiconductor device, a second metallization layer on the first metallization layer, and a third dielectric layer between the first metallization layer and the second metallization layer. The first metallization layer includes a first dielectric layer and a first metal layer disposed in the first dielectric layer, wherein the first metal layer has a first thickness, and the first metal layer comprises copper. The third dielectric layer has a second thickness, and a ratio of the second thickness of the third dielectric layer to the first thickness of the first metal layer is ranged from about 3 to about 20.

Abstract: A keyboard device includes a membrane circuit board, a base plate and a key. The key includes a keycap, a connecting element and a stabilizer bar. The connecting element is connected between the keycap and the base plate. The stabilizer bar is connected between the keycap and the connecting element. While the keycap is moved upwardly or downwardly relative to the base plate, the stabilizer bar is swung to stabilize the key. Since the stabilizer bar is connected between the keycap and the connecting element, the stabilizer bar does not readily collide with or knock on the base plate. During the process of operating the key, the generated noise is reduced. Consequently, the operating comfort to the user is enhanced.

Abstract: A method of two-way information exchange for a system for making friends is disclosed. With the method, a system can provide a primary target client blended with a plurality of false target clients for a requesting client who seeks making friends. The requesting client is entitled to request the system to delete one of the target clients when communication between both parties reaches a threshold of time. The requesting client does not know which one of the target clients is the real client until all of the false target clients have been deleted, thus reducing preconceptions due to a person's appearance. As such, after a period of communication, both parties may achieve a certain degree of mutual understanding to facilitate a decision on making friends.

Abstract: A keyboard device includes a membrane circuit board, a key frame, a position-limiting frame and a key structure. The key frame is located over the membrane circuit board. The position-limiting frame is located over the key frame. The key frame includes a first frame body and a first receiving hole. The first receiving hole runs through the first frame body along a vertical direction. The position-limiting frame includes a second frame body and a second receiving hole. The second receiving hole runs through the second frame body along the vertical direction. The second receiving hole is in communication with the first receiving hole. The key structure includes a keycap and a protrusion part. The keycap is movable within the first receiving hole and the second receiving hole. A portion of the protrusion part is located under the second frame body.

Abstract: A keyboard device includes a membrane circuit board, a base plate and a key. The key includes a keycap, a connecting element and a stabilizer bar. The connecting element is connected between the keycap and the base plate. The stabilizer bar is connected between the keycap and the connecting element. While the keycap is moved upwardly or downwardly relative to the base plate, the stabilizer bar is swung to stabilize the key. Since the stabilizer bar is connected between the keycap and the connecting element, the stabilizer bar does not readily collide with or knock on the base plate. During the process of operating the key, the generated noise is reduced. Consequently, the operating comfort to the user is enhanced.