Patents by Inventor Yi-Cheng Chu

Yi-Cheng Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240128378
    Abstract: A semiconductor device includes a first transistor and a protection structure. The first transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, and a channel layer disposed on the gate dielectric. The protection structure is laterally surrounding the gate electrode, the gate dielectric and the channel layer of the first transistor. The protection structure includes a first capping layer and a dielectric portion. The first capping layer is laterally surrounding and contacting the gate electrode, the gate dielectric and the channel layer of the first transistor. The dielectric portion is disposed on the first capping layer and laterally surrounding the first transistor.
    Type: Application
    Filed: January 30, 2023
    Publication date: April 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Cheng Chu, Chien-Hua Huang, Yu-Ming Lin, Chung-Te Lin
  • Publication number: 20230395673
    Abstract: A transistor includes a gate electrode, a gate dielectric, a channel layer and a source line and bit line. The gate electrode includes a first gate material layer and a second gate material layer disposed on the first gate material layer, wherein a work function of the first gate material layer is lower than a work function of the second gate material layer. The gate dielectric is disposed on the gate electrode. The channel layer is disposed on the gate dielectric. The source line and bit line are disposed on and connected to the channel layer.
    Type: Application
    Filed: June 6, 2022
    Publication date: December 7, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Cheng Chu, Tzu-Hsiang Hsu, Pin-Cheng Hsu, Chung-Te Lin
  • Publication number: 20220406992
    Abstract: Some embodiments relate to a memory device. The memory device includes a substrate comprising an inter-metal dielectric layer having a metal line, a dielectric layer over the substrate, a bottom electrode via through the dielectric layer and in contact with the metal line, a bottom electrode over the bottom electrode via, a magnetic tunneling junction (MTJ) element over the bottom electrode, and a top electrode over the MTJ element. A center portion of the bottom electrode directly above the bottom electrode via is thicker than an edge portion of the bottom electrode.
    Type: Application
    Filed: April 21, 2022
    Publication date: December 22, 2022
    Inventors: Yi-Cheng Chu, Chung-Te Lin, Kai-Wen Cheng, Han-Ting Tsai, Jung-Tsan Tsai, Pao-Yi Tai, Chien-Hua Huang
  • Publication number: 20100023485
    Abstract: To provide fast, robust matching of audio content, such as music, with visual content, such as images, videos, and text, a keyword is extracted from either the audio content or the visual content. The keyword is then utilized to match the audio content with the visual content, or the visual content with the audio content. The keyword may also be utilized to find other related keywords for expanding the amount of visual content or audio content matched. The matched audio and visual content may also be mixed to generate audiovisual content, such as a presentation or slideshow with background music.
    Type: Application
    Filed: July 25, 2008
    Publication date: January 28, 2010
    Inventor: Hung-Yi Cheng Chu