Abstract: A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising: forming a VCSEL pillar array; applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars; planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars; applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; and applying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package has a VCSEL pillar array. A first metal contact is formed over a top section of each pillar of the VCSEL pillar array. A second metal contact is formed on a back surface of the VCEL pillar array. An opening is formed in the second metal contact and aligned with the pillars of the VCSEL pillar array. Solder tip is applied on each pillar of the VCSEL pillar array to flip chip mount the VCSEL pillar array.

Abstract: A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising: forming a VCSEL pillar array; applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars; planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars; applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; and applying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package.

Abstract: A target shooting tracking system has a first camera taking and recording images. An image processor receiving the images. The image processor performing image subtraction on the images to identified a latest marking on a target.

Abstract: A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.

Abstract: A method for generating feedback to a user practicing a skill comprises: providing a local platform for acquiring physical parameter data pertaining to motion and position of the user and motion and position of a golf club and a golf ball struck by the golf club during a golf swing by the user; transmitting via a network at least a portion of the physical parameter data of the motion and position of the golf club and the golf ball struck by the golf club during the golf swing and the physical parameter data associated with the motion and position of the user during the golf swing from the local platform to a machine learning analysis engine as input information; entering the input information into a machine learning model, the machine learning model having a set of rules and statistical techniques to learn patterns from the input data, and a model which is trained by using evolving training sets, wherein an initial training sets is formed from selected professional golf players physical and swing characterist

Abstract: A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.

Abstract: An online gaming system verifying data integrity has a server hosting an online game. At least one gaming simulator is wirelessly coupled to the server. Data integrity circuitry is coupled to the server and the at least one gaming simulator. The data integrity circuitry ensures that sensory data inputs from the at least one gaming simulator are free from intentional manipulation.

Abstract: A method of semiconductor device fabrication that enables fine-line geometry lithographic definition and small form-factor packaging comprises: forming contacts on a metal layer of the semiconductor device; applying a protective mask layer over active regions and surfaces of the contacts having rough surface morphology; planarizing a surface of the semiconductor device until the protective mask layer is removed and the surfaces of the contacts having rough surface morphology are planarized; and forming contact stacks on the surfaces of the contacts which are planarized.

Abstract: A method for forming a Bulk Acoustic Wave (BAW) structure comprises forming a piezoelectric material on a first substrate; applying a first metal layer on a top surface of the piezoelectric material; forming a metal pattern on a second substrate, the metal pattern forming a cavity pattern between raised areas of the metal pattern; attaching the first metal layer to a top area of the metal pattern forming a plurality of cavity areas; removing the first substrate; and applying a second metal layer on a bottom surface of the piezoelectric material.

Abstract: A method of forming a Tunnel Junction (TJ) Vertical Cavity Surface Emitting Laser (VCSEL) array comprises forming a first mirror device on a substrate; forming an active region on the first mirror device; forming a first portion of a second mirror device on the active region; forming a plurality of tunnel junctions on the first portion of the second mirror device; and forming a second portion of the second mirror device through an epitaxial overgrowth, the second portion of the second mirror device covering the plurality of tunnel junctions, wherein individual VCSEL elements of the TJ VCSEL array are electrically connected through the epitaxial overgrowth of the second portion of the second mirror device.

Abstract: A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising: forming a VCSEL pillar array; applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars; planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars; applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; and applying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A method of semiconductor device fabrication that enables fine-line geometry lithographic definition and small form-factor packaging comprises: forming contacts on a metal layer of the semiconductor device; applying a protective mask layer over active regions and surfaces of the contacts having rough surface morphology; planarizing a surface of the semiconductor device until the protective mask layer is removed and the surfaces of the contacts having rough surface morphology are planarized; and forming contact stacks on the surfaces of the contacts which are planarized

Abstract: An opto-electronic device has a backside Vertical Cavity Surface Emitting Laser (VCSEL) device. An optical component is formed on a rear surface of the backside VCSEL device.

Abstract: A Bulk Acoustic Resonator (BAR) structure has a substrate. A cavity pattern is formed on the substrate. A Bulk Acoustic Wave (BAW) structure is formed on the cavity pattern and the substrate, wherein portions of the cavity pattern are exposed. The cavity pattern under the BAW structure is removed creating a self-sustaining cavity to form the novel cavity structure.

Abstract: A method of forming a Tunnel Junction (TJ) Vertical Cavity Surface Emitting Laser (VCSEL) array comprises forming a first mirror device on a substrate; forming an active region on the first mirror device; forming a first portion of a second mirror device on the active region; forming a plurality of tunnel junctions on the first portion of the second mirror device; and forming a second portion of the second mirror device through an epitaxial overgrowth, the second portion of the second mirror device covering the plurality of tunnel junctions, wherein individual VCSEL elements of the TJ VCSEL array are electrically connected through the epitaxial overgrowth of the second portion of the second mirror device.

Abstract: A method of forming a flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package comprising: forming a VCSEL pillar array; applying a dielectric layer to the VCSEL pillar array, the dielectric layer filling trenches in between pillars forming the VCSEL pillar array and covering the pillars; planarizing the VCSEL pillar array to remove the dielectric layer covering the pillars exposing a metal layer on a top surface of the pillars; applying a metal coating on the metal layer on a top surface of the pillars, the metal layer defining a contact pattern of the VCSEL pillar array; and applying solder on the metal coating to flip chip mount the VCSEL pillar array to a substrate package.