Abstract: A package and a method of manufacturing the same are provided. The package includes a first die, a second die, a third die, an encapsulant, and a redistribution layer (RDL) structure. The first die and the second die are disposed side by side. The third die is disposed on the first die and the second die to electrically connect the first die and the second die. The encapsulant laterally encapsulates the first die, the second die, and the third die and fills in a gap between the first die, the second die, and the third die. The RDL structure is disposed on the third die and the encapsulant.

Abstract: Package structures and methods for forming the same are provided. A package structure includes a package layer. The package structure also includes an integrated circuit die and a first connector embedded in the package layer. The package structure further includes a redistribution layer over the package layer. The integrated circuit die is electrically connected to the redistribution layer through the first connector. In addition, the package structure includes a passivation layer over the redistribution layer. The package structure also includes a second connector over the passivation layer. A first portion of the redistribution layer and a second portion of the second connector extend into the passivation layer. The second portion of the second connector has a tapered profile along a direction from the integrated circuit die towards the first connector.

Abstract: A semiconductor package structure includes a plurality of first dies spaced from each other, a molding layer between the first dies, a second die over the plurality of first dies and the molding layer, and an adhesive layer between the plurality of first dies and the second die, and between the molding layer and the second die. A first interface between the adhesive layer and the molding layer and a second interface between the adhesive layer and the plurality of first dies are at different levels.

Abstract: A method of manufacturing a semiconductor package structure is provided. A stacked structure formed over the carrier substrate is provided, wherein the stacked structure has a channel with an opening. The stacked structure is immersed into a fluidic molding material to render the fluidic molding material flow into the channel through the openings.

Abstract: Package structures and methods for forming the same are provided. A package structure includes a package layer. The package structure also includes an integrated circuit die and a first connector embedded in the package layer. The package structure further includes a redistribution layer over the package layer. The integrated circuit die is electrically connected to the redistribution layer through the first connector. In addition, the package structure includes a passivation layer over the redistribution layer. The package structure also includes a second connector over the passivation layer. A first portion of the redistribution layer and a second portion of the second connector extend into the passivation layer. The second portion of the second connector has a tapered profile along a direction from the integrated circuit die towards the first connector.

Abstract: An animal carrying bed includes a tubular unit, an electrical connector and an end cover unit. The electrical connector is arranged on one end of the tubular unit, and the end cover unit is arranged at another end thereof. The end cover unit is formed of an intake channel and a discharge channel therein and separated from each other. The end cover unit is formed of an intake opening inside the tubular unit and connected to the intake channel. The end cover unit is formed of a plurality of discharge openings inside the tubular unit and connected to the discharge channel. The intake channel and the discharge channel are connected to the electrical connector via guide tubes respectively, and the guide tubes are installed inside the tubular unit.

Abstract: Package structures and methods for forming the same are provided. A method for forming a package structure includes providing a carrier substrate. The method also includes forming a conductive layer over the carrier substrate. The method further includes forming a passivation layer over the conductive layer. The passivation layer includes openings that expose portions of the conductive layer. In addition, the method includes bonding integrated circuit dies to the portions of the conductive layer through bumps. There is a space between the integrated circuit dies and the passivation layer. The method also includes filling the space with a first molding compound. The first molding compound surrounds the bumps and the integrated circuit dies. The method further includes forming a second molding compound capping the first molding compound and the integrated circuit dies. The passivation layer has a sidewall that is covered by the second molding compound.

Abstract: A carrier positioning device includes a carrying base (100) and a carrier (200). A clamp (110) is arranged on the carrying base (100) and a protruding hook (113) protrudes from one side of a distal end (111) of the clamp (110). The carrier (200) has a pipe (210), and a joint (220) is disposed at one end of the pipe (210). The protruding hook (113) hooks one side of the joint (220) so that at least another portion of the carrier (200) is in contact with the carrying base (100). Accordingly, the carrier (200) can be quickly installed or be removed along a lateral direction.

Abstract: A method of manufacturing a semiconductor package structure is provided. A stacked structure formed over the carrier substrate is provided, wherein the stacked structure has a channel with an opening. The stacked structure is immersed into a fluidic molding material to render the fluidic molding material flow into the channel through the openings.

Abstract: Package structures and methods for forming the same are provided. A method for forming a package structure includes providing a carrier substrate. The method also includes forming a conductive layer over the carrier substrate. The method further includes forming a passivation layer over the conductive layer. The passivation layer includes openings that expose portions of the conductive layer. In addition, the method includes bonding integrated circuit dies to the portions of the conductive layer through bumps. There is a space between the integrated circuit dies and the passivation layer. The method also includes filling the space with a first molding compound. The first molding compound surrounds the bumps and the integrated circuit dies. The method further includes forming a second molding compound capping the first molding compound and the integrated circuit dies. The passivation layer has a sidewall that is covered by the second molding compound.

Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.

Abstract: A semiconductor package may include a first substrate, a second substrate facing the first substrate, a plurality of first electrical connections disposed between the first substrate and the second substrate, and a first material disposed between the first substrate and the second substrate. The plurality of first electrical connections may electrically couple the first substrate and the second substrate to each other. The first material may surround each of the plurality of first electrical connections, and a width of the first material proximal the first substrate may be smaller than a width of the first material proximal the second substrate.

Abstract: A semiconductor package may include a first substrate, a second substrate facing the first substrate, a plurality of first electrical connections disposed between the first substrate and the second substrate, and a first material disposed between the first substrate and the second substrate. The plurality of first electrical connections may electrically couple the first substrate and the second substrate to each other. The first material may surround each of the plurality of first electrical connections, and a width of the first material proximal the first substrate may be smaller than a width of the first material proximal the second substrate.

Abstract: A package-on-package (“PoP”) structure and a method of forming are provided. The PoP structure may be formed by forming a first set of electrical connections on a first substrate. A first material may be applied to the first set of electrical connections. A second substrate may be provided having a second set of electrical connections formed thereon. The first set of electrical connections of the first substrate having the epoxy flux applied may be contacted to the second electrical connections of the second substrate. A reflow process may be performed to electrically connect the first substrate to the second substrate. The epoxy flux applied to the first electrical connections of the first substrate may prohibit electrical bridges or shorts from forming during the reflow process.

Abstract: A package-on-package (“PoP”) structure and a method of forming are provided. The PoP structure may be formed by forming a first set of electrical connections on a first substrate. A first material may be applied to the first set of electrical connections. A second substrate may be provided having a second set of electrical connections formed thereon. The first set of electrical connections of the first substrate having the epoxy flux applied may be contacted to the second electrical connections of the second substrate. A reflow process may be performed to electrically connect the first substrate to the second substrate. The epoxy flux applied to the first electrical connections of the first substrate may prohibit electrical bridges or shorts from forming during the reflow process.

Abstract: A package-on-package (PoP) device including a substrate having an array of contact pads arranged around a periphery of the substrate, a logic chip mounted to the substrate inward of the array of contact pads, and non-solder bump structures mounted on less than an entirety of the contact pads available.