Abstract: A VR equipment includes a casing, and an optical module, an eye movement module, and a display module located inside the casing. The optical module includes a lens barrel and first to fourth lenses located in the lens barrel and arranged in sequence from an object plane to an image plane along an optical axis. The eye movement module is located between the first and second lenses. The eye movement module has a light-emitting unit and a receiving unit. The light-emitting unit emits a detection light to human eyes which is then reflected. The reflected detection light is reflected at an object side surface of the second lens and then enters the receiving unit after passing through an object side surface and an image side surface of the first lens. The display module is at an image side surface of the fourth lens. The display module displays an image.

Abstract: The present application provides a system for unmanned aerial vehicle (UAV) parachute landing. An exemplary system includes a detector configured to detect at least one of a flight speed, a wind speed, a wind direction, a position, a height, and a voltage of a UAV. The system also includes a memory storing instructions and a processor configured to execute the instructions to cause the system to: determine whether to open a parachute of the UAV in accordance with a criterion, responsive to the determination to open the parachute of the UAV, stop a motor of the UAV that spins a propeller of the UAV, and open the parachute of the UAV after stopping the motor of the UAV for a first period.

Abstract: The present invention relates to a foamable composition used to prepare foamed thermoplastic polyurethane and a microwave molded body thereof. The foamable composition includes unfoamed thermoplastic polyurethane particles, a thickener or a bridging agent, and a foaming agent, wherein the unfoamed thermoplastic polyurethane particles have a viscosity of 1,000 poise to 9,000 poise measured at 170° C. according to JISK 7311 test method.

Abstract: A method of manufacturing a hybrid random access memory in a system-on-chip, including steps of providing a semiconductor substrate with a magnetoresistive random access memory (MRAM) region and a resistive random-access memory (ReRAM) region, forming multiple ReRAM cells in the ReRAM region on the semiconductor substrate, forming a first dielectric layer on the semiconductor substrate, wherein the ReRAM cells are in the first dielectric layer, forming multiple MRAM cells in the MRAM region on the first dielectric layer, and forming a second dielectric layer on the first dielectric layer, wherein the MRAM cells are in the second dielectric layer.

Abstract: A wireless implant and associated system for motor function recovery after spinal cord injury, and more particularly a multi-channel wireless implant with small package size. The wireless implant can further be used in various medical applications, such as retinal prostheses, gastrointestinal implant, vagus nerve stimulation, and cortical neuromodulation. The system also includes a method and its implementation to acquire the impedance model of the electrode-tissue interface of the implant.

Abstract: An electronic package is provided, in which a first electronic element and a second electronic element stacked on each other are embedded in a cladding layer, a circuit structure electrically connected to the second electronic element is formed on the cladding layer, and a passive element and a package module are disposed on the circuit structure, so as to shorten the transmission distance of electrical signals between the package module and the second electronic element.

Abstract: Apparatus and methods are provided for TxRU carrier switch. In one embodiment, the UE is configured with an anchor carrier in an anchor cell and one or more secondary carriers. In one embodiment, the TxRU carrier switch is configured as supplementary uplink (SUL)-based carrier switch with supplementary carriers or configured as a CA-based carrier switch with supplementary cells. In one embodiment, the one or more secondary carriers are supplementary carriers of the anchor cell, and wherein the anchor carrier is TDD carrier or frequency division duplex (FDD) carrier, and wherein the supplementary carrier is configured as a TDD carrier, a FDD carrier, a supplementary uplink carrier (SUL), or a supplementary downlink carrier (SDL). In another embodiment, the one or more secondary carriers are supplementary cells different from the anchor cell, and wherein the supplementary cells are configured with MAC control element (CE).

Abstract: A method of caching mapping table for use in a flash memory device having a flash memory controller and a flash memory is provided. The method includes: in response to a host read command, determining whether a group of a logical-to-physical (L2P) required by handling the host read command has been loaded to a DRAM of the flash memory controller; if the required group of the L2P mapping table has not been loaded to the DRAM, loading the required group of the L2P mapping table from the flash memory to a SRAM of the flash memory controller; directly accessing the SRAM to obtain an L2P address associated with the host read command from the required group of the L2P mapping table; and performing a read operation on the flash memory in response to the host read command according to the obtained L2P address.

Abstract: In a method of forming a pattern over a semiconductor substrate, a target layer to be patterned is formed over a substrate, a mask pattern including an opening is formed in a mask layer, a shifting film is formed in an inner sidewall of the opening, a one-directional etching operation is performed to remove a part of the shifting film and a part of the mask layer to form a shifted opening, and the target layer is patterned by using the mask layer with the shifted opening as an etching mask. A location of the shifted opening is laterally shifted from an original location of the opening.

Abstract: A security system includes a surveillance device that monitors a predetermined event and captures images in a monitor scene; and a controller that controls the surveillance device and transmits the captured images. The surveillance device adjusts image capture amount, image transmit amount, image transmit order or image resolution when the predetermined event is detected and an object is detected on the captured images.

Abstract: Systems and methods for implementation of a disposable miniaturized implant for treatment of Post-Operative Ileums (POI), a miniaturized implant for treating chronic GI dysmotility (e.g., dysphagia, gastroesophageal reflux disease (GERD), nausea, functional dyspepsia, blockage of transit, and gastroparesis, inflammatory bowel disease) and obesity, by providing electrical stimulation to the part of bowel going through surgery to expedite the healing process while recording the smooth muscle activities simultaneously, or providing stimulation on a treatment location of the GI tract or the branch of the vagus nerve. Systems and methods are also provided for non-invasive, transcutaneous stimulation of anatomy within the abdomen of the patient.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: An integrated motor and drive assembly is disclosed and includes a housing, a motor and a drive. The housing includes a motor-accommodation portion and a drive-accommodation portion. The drive includes a power board and a control board. The power board is made of a high thermal conductivity substrate and includes a power element and an encoder disposed on the first side, the first side faces the motor, the power board and the motor are stacked along a first direction, and the second side contacts the housing to from a heat-dissipating route. The control board is disposed adjacent to the power board. The control board and the power board are arranged along a second direction perpendicular to the first direction, and the first direction is parallel to an axial direction of the motor. A part of the power board and a part of the control board are directly contacted to form an electrical connection.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. Source/drain regions are disposed within the substrate on opposing sides of the recess. A first gate dielectric is arranged along the one or more interior surfaces forming the recess, and a second gate dielectric is arranged on the first gate dielectric and within the recess. A gate electrode is disposed on the second gate dielectric. The second gate dielectric includes one or more protrusions that extend outward from a recessed upper surface of the second gate dielectric and that are arranged along opposing sides of the second gate dielectric.

Abstract: A wireless implant and associated system for motor function recovery after spinal cord injury, and more particularly a multi-channel wireless implant with small package size. The wireless implant can further be used in various medical applications, such as retinal prostheses, gastrointestinal implant, vagus nerve stimulation, and cortical neuromodulation. The system also includes a method and its implementation to acquire the impedance model of the electrode-tissue interface of the implant.

Abstract: A probe station includes a frame, a platform, a testing equipment, a probe holder and at least one probe. The frame defines an accommodation space. The platform is connected with the frame. The platform has an opening. The opening is communicated with the accommodation space. The testing equipment is at least partially disposed in the accommodation space and is at least partially exposed through the opening. The probe holder is disposed on the platform. The probe is held by the probe holder. The probe holder is configured to control the probe to contact with a device under test disposed on the testing equipment through the opening.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.