Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.

Abstract: A adjustable upper coil or electrode for a reaction chamber apparatus useable in semiconductor processing, is constructed so that its shape may be selectively changed or so at least two portions thereof may be selectively driven at different power and/or frequencies. The adjustable upper coil or electrode, therefore, enables the plasma density distribution in the reaction chamber apparatus to be selectively controlled.

Abstract: An apparatus includes a first enclosure, a first door, at least one first valve, at least one inlet diffuser and at least one substrate holder. The first enclosure has a first opening. The first door is configured to seal the first opening. The first valve is coupled to the first enclosure. The inlet diffuser is coupled to the first valve and configured to provide a first gas with a temperature substantially higher than a temperature of an environment around the first enclosure. Each substrate holder disposed within the first enclosure supports at least one substrate.

Abstract: A semiconductor processing method includes processing a first substrate while detecting at least one first processing parameter value in a first apparatus. The first processing parameter is analyzed, thereby yielding at least one first predicted parameter value. The first predicted parameter value is compared with a first pre-defined parameter value, thereby yielding at least one first comparison result. A first recipe is applied corresponding to the first comparison result for processing a second substrate in the first apparatus.

Abstract: A semiconductor manufacturing system, an interface system, a carrier, and a method for providing an ambient controlled environment is disclosed. The semiconductor manufacturing system comprises a plurality of process chambers; at least one interface system, wherein the interface system includes a first ambient control element; at least one carrier, wherein the carrier comprises a second ambient control element; and a control module coupled to the plurality of process chambers, the at least one interface system, and the at least one carrier.

Abstract: A carrier comprises an enclosure, a cabinet and at least one substrate holder. The enclosure comprises a door. The cabinet is coupled to the carrier. The cabinet comprises at least one valve and contains at least one reduction fluid. The substrate holder is disposed within the enclosure to support at least one substrate.

Abstract: An apparatus includes an enclosure and a door configured to seal the enclosure. The door includes a plate. A rotational apparatus is disposed over the plate. At least one first member with a first arm extends from a first rib of the first member. At least one second member with a second arm extends from a second rib of the second member. The first and second arms are connected to the rotational apparatus. At least one corner member has a first edge. The first edge has a shape corresponding to a shape of a corner of the frame. The corner member is connected to a first end of the third arm. A second end of the third arm is connected to the rotational apparatus. A sealing material is disposed along a first longitudinal side of the first rib and a second longitudinal side of the second rib.

Abstract: An apparatus includes a first enclosure, a first door, at least one first valve, at least one inlet diffuser and at least one substrate holder. The first enclosure has a first opening. The first door is configured to seal the first opening. The first valve is coupled to the first enclosure. The inlet diffuser is coupled to the first valve and configured to provide a first gas with a temperature substantially higher than a temperature of an environment around the first enclosure. Each substrate holder disposed within the first enclosure supports at least one substrate.

Abstract: A carrier comprises an enclosure, a cabinet and at least one substrate holder. The enclosure comprises a door. The cabinet is coupled to the carrier. The cabinet comprises at least one valve and contains at least one reduction fluid. The substrate holder is disposed within the enclosure to support at least one substrate.

Abstract: An adjustable anode assembly for a wet processing apparatus to allow selective tuning of the electrical field density distribution within a wet process chemical of the apparatus, which in turn allows the process specification or specifications to be selectively varied across the process surface of a wafer when processed by the apparatus. The adjustable anode assembly includes an anode which may be divided into several plates, at least one of which is capable of being moved from a first plane to at least a second plane.

Abstract: A adjustable upper coil or electrode for a reaction chamber apparatus useable in semiconductor processing, is constructed so that its shape may be selectively changed or so at least two portions thereof may be selectively driven at different power and/or frequencies. The adjustable upper coil or electrode, therefore, enables the plasma density distribution in the reaction chamber apparatus to be selectively controlled.

Abstract: A semiconductor processing method includes processing a first substrate while detecting at least one first processing parameter value in a first apparatus. The first processing parameter is analyzed, thereby yielding at least one first predicted parameter value. The first predicted parameter value is compared with a first pre-defined parameter value, thereby yielding at least one first comparison result. A first recipe is applied corresponding to the first comparison result for processing a second substrate in the first apparatus.

Abstract: A carrier comprises an enclosure, a cabinet and at least one substrate holder. The enclosure comprises a door. The cabinet is coupled to the carrier. The cabinet comprises at least one valve and contains at least one reduction fluid. The substrate holder is disposed within the enclosure to support at least one substrate.

Abstract: An apparatus includes an enclosure, at least one process chamber, a robot and at least one valve. The enclosure has a gas therein and at least one door configured to cover an opening into the enclosure. The gas includes at least one reduction gas. The robot is disposed within the enclosure and configured to transfer a substrate between the door and the process chamber. The valve is coupled to the enclosure.

Abstract: A gas distribution apparatus includes a first plate and a second plate comprising a plurality of first openings and second openings, respectively. The second plate is disposed in overlapping relation with the first plate. Overlaps of the first openings and the second openings form third openings, which provide a first gas distribution pattern at a first orientation of the plates relative to one another and a second gas distribution pattern at a second orientation different than the first orientation.

Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.

Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.

Abstract: A method and system for detecting a lifetime of a slab of consumable material used by a process tool. In the method and system, the slab of consumable material is provided with at least one indicator. A determination is made as to whether a value of a signal generated by a detector associated with the at least one indicator during operation of the process tool is equal to a warning setting value, is between the warning setting value and an alarm setting value, is equal to an alarm setting value, or is above the alarm setting value. A first warning is provided if the value of the signal is equal to the warning setting value or between the warning setting value and the alarm setting value, the first warning indicating that the slab of consumable material is approaching a predetermined quantity which is less than an original quantity of the slab of consumable material.

Abstract: Systems and methods for temperature control of semiconductor wafers are provided. An exemplary embodiment of semiconductor wafer is held by an electrostatic chuck. An exemplary embodiment of system includes a cooling apparatus connecting the electrostatic chuck. The cooling apparatus comprises an inlet, an outlet, a porous flow layer, a porous contact layer contacting the electrostatic chuck, and a porous heat exchange layer disposed between the flow layer and the contact layer. The inlet communicates with the flow layer, and the outlet communicates with the contact layer. The fluid medium is introduced into the flow layer from the inlet and sequentially flows through the heat exchange layer and the contact layer. The fluid medium is discharged from the contact layer through the outlet, thereby exchanging heat from the semiconductor wafer.

Abstract: A system and method which is capable of compensating for unintended elevations in process temperatures induced in a substrate during a semiconductor fabrication process in order to reduce or eliminate disparities in critical dimensions of device features. The system may be a plasma etching system comprising a process chamber containing an electrostatic chuck (ESC) for supporting a wafer substrate. A chiller outside the process chamber includes a main coolant chamber, which contains a main coolant fluid, as well as an compensation coolant chamber, which contains an compensation coolant fluid. A main circulation loop normally circulates the main coolant fluid from the main coolant chamber through the electrostatic chuck to maintain the chuck at a desired set point temperature.